Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder
| ISSN: |
0169-4332
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291700684161025 |
|---|---|
| autor | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. |
| autorsonst | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0169-4332(92)90310-T |
| datenlieferant | nat_lic_papers |
| fussnote | We present ab-initio calculations of Raman spectra of a prototype superlattice (SL) formed by the periodic repetition of an AlAs single monolayer embedded between two thicker GaAs layers. By comparing results for the ideal structure and for disordered configurations characterized by cationic intermixing, we demonstrate that AlAs-like longitudinal optical modes are extremely sensitive to disorder and may allow a quantitative characterization of the actual composition profiles obtained in real samples. The general implications of this conclusion for the study of interface intermixing in GaAs/AlAs SL's are discussed. |
| hauptsatz | hsatz_simple |
| identnr | NLZ179401076 |
| issn | 0169-4332 |
| journal_name | Applied Surface Science |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 56-58 (1992), S. 617-621 |
| search_space | articles |
| shingle_author_1 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. |
| shingle_author_2 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. |
| shingle_author_3 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. |
| shingle_author_4 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. |
| shingle_catch_all_1 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder 0169-4332 01694332 Elsevier |
| shingle_catch_all_2 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder 0169-4332 01694332 Elsevier |
| shingle_catch_all_3 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder 0169-4332 01694332 Elsevier |
| shingle_catch_all_4 | Molinari, E. Baroni, S. Giannozzi, P. de Gironcoli, S. Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder 0169-4332 01694332 Elsevier |
| shingle_title_1 | Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder |
| shingle_title_2 | Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder |
| shingle_title_3 | Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder |
| shingle_title_4 | Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:36:47.037Z |
| titel | Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder |
| titel_suche | Vibrational properties of isolated AlAs monolayers embedded in GaAs: a theoretical study of the effects of disorder We present ab-initio calculations of Raman spectra of a prototype superlattice (SL) formed by the periodic repetition of an AlAs single monolayer embedded between two thicker GaAs layers. By comparing results for the ideal structure and for disordered configurations characterized by cationic intermixing, we demonstrate that AlAs-like longitudinal optical modes are extremely sensitive to disorder and may allow a quantitative characterization of the actual composition profiles obtained in real samples. The general implications of this conclusion for the study of interface intermixing in GaAs/AlAs SL's are discussed. |
| topic | U |
| uid | nat_lic_papers_NLZ179401076 |