Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon
Collins, R.W. ; Cong, Y. ; Kim, Y.-T. ; Vedam, K. ; Liou, Y. ; Inspektor, A. ; Messier, R.
Amsterdam : Elsevier
Amsterdam : Elsevier
| ISSN: |
0040-6090
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Physics
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| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291426114535424 |
|---|---|
| autor | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. |
| autorsonst | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0040-6090(89)90525-7 |
| datenlieferant | nat_lic_papers |
| fussnote | Recent advances in real-time and spectroscopic ellipsometry characterization of vapor-deposited thin film diamond, diamond-like carbon, and their synthesis are reviewed. Examples are presented in which ellipsometric techniques have led to insights into growth mechanisms and film structure that would have been difficult to elicit by other methods. The determination of the bulk and interface optical properties of diamond-like films in real time and the application of the techniques to obtain reproducibly tailored interfaces are demonstrated. Real-time ellipsometry has also been used to survey preparation parameter space and establish conditions that lead to sustained film growth or etching. Spectroscopic measurements of the surface, bulk, and interface structure of assisted chemical vapor deposited diamond films will also be discussed. Ellipsometry coupled with preferential chemical etching can determine the thickness and evolution of carbide layers formed on the substrate before diamond nucleation. For microwave plasma deposition of diamond on c-Si at 980^oC, the SiC is 40 to 70 Å and is present on all Si substrates studied. |
| hauptsatz | hsatz_simple |
| identnr | NLZ178769983 |
| issn | 0040-6090 |
| journal_name | Thin Solid Films |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 181 (1989), S. 565-578 |
| search_space | articles |
| shingle_author_1 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. |
| shingle_author_2 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. |
| shingle_author_3 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. |
| shingle_author_4 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. |
| shingle_catch_all_1 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon 0040-6090 00406090 Elsevier |
| shingle_catch_all_2 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon 0040-6090 00406090 Elsevier |
| shingle_catch_all_3 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon 0040-6090 00406090 Elsevier |
| shingle_catch_all_4 | Collins, R.W. Cong, Y. Kim, Y.-T. Vedam, K. Liou, Y. Inspektor, A. Messier, R. Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon 0040-6090 00406090 Elsevier |
| shingle_title_1 | Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon |
| shingle_title_2 | Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon |
| shingle_title_3 | Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon |
| shingle_title_4 | Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:32:26.455Z |
| titel | Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon |
| titel_suche | Real-time and spectroscopic ellipsometry characterizatio of diamond and diamond-like carbon Recent advances in real-time and spectroscopic ellipsometry characterization of vapor-deposited thin film diamond, diamond-like carbon, and their synthesis are reviewed. Examples are presented in which ellipsometric techniques have led to insights into growth mechanisms and film structure that would have been difficult to elicit by other methods. The determination of the bulk and interface optical properties of diamond-like films in real time and the application of the techniques to obtain reproducibly tailored interfaces are demonstrated. Real-time ellipsometry has also been used to survey preparation parameter space and establish conditions that lead to sustained film growth or etching. Spectroscopic measurements of the surface, bulk, and interface structure of assisted chemical vapor deposited diamond films will also be discussed. Ellipsometry coupled with preferential chemical etching can determine the thickness and evolution of carbide layers formed on the substrate before diamond nucleation. For microwave plasma deposition of diamond on c-Si at 980^oC, the SiC is 40 to 70 Å and is present on all Si substrates studied. |
| topic | U |
| uid | nat_lic_papers_NLZ178769983 |