π-Bonded chain structure for Ge ON Si(111)
| ISSN: |
0167-2584
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291620630626307 |
|---|---|
| autor | Srivastava, G.P. Ciraci, S. P. Batra, I. |
| autorsonst | Srivastava, G.P. Ciraci, S. P. Batra, I. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0167-2584(87)90134-4 |
| datenlieferant | nat_lic_papers |
| fussnote | Using pseudopotential total-energy and force methods, we have studied the atomic and electronic structure of substitutional monolayer coverage of Ge on the cleaved Si(111) surface. Our results indicate that Ge atoms form a π-chain with an energy benefit of 0.32 eV /(surface atom) relative to the ideal substitutional configuration. The π-chain structure is semiconducting, and the resulting band structure is readily distinguishable from the Seiwatz chain model. |
| hauptsatz | hsatz_simple |
| identnr | NLZ178693413 |
| issn | 0167-2584 |
| journal_name | Surface Science Letters |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 183 (1987), S. L290-L296 |
| search_space | articles |
| shingle_author_1 | Srivastava, G.P. Ciraci, S. P. Batra, I. |
| shingle_author_2 | Srivastava, G.P. Ciraci, S. P. Batra, I. |
| shingle_author_3 | Srivastava, G.P. Ciraci, S. P. Batra, I. |
| shingle_author_4 | Srivastava, G.P. Ciraci, S. P. Batra, I. |
| shingle_catch_all_1 | Srivastava, G.P. Ciraci, S. P. Batra, I. π-Bonded chain structure for Ge ON Si(111) 0167-2584 01672584 Elsevier |
| shingle_catch_all_2 | Srivastava, G.P. Ciraci, S. P. Batra, I. π-Bonded chain structure for Ge ON Si(111) 0167-2584 01672584 Elsevier |
| shingle_catch_all_3 | Srivastava, G.P. Ciraci, S. P. Batra, I. π-Bonded chain structure for Ge ON Si(111) 0167-2584 01672584 Elsevier |
| shingle_catch_all_4 | Srivastava, G.P. Ciraci, S. P. Batra, I. π-Bonded chain structure for Ge ON Si(111) 0167-2584 01672584 Elsevier |
| shingle_title_1 | π-Bonded chain structure for Ge ON Si(111) |
| shingle_title_2 | π-Bonded chain structure for Ge ON Si(111) |
| shingle_title_3 | π-Bonded chain structure for Ge ON Si(111) |
| shingle_title_4 | π-Bonded chain structure for Ge ON Si(111) |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:35:31.961Z |
| titel | π-Bonded chain structure for Ge ON Si(111) |
| titel_suche | π-Bonded chain structure for Ge ON Si(111) Using pseudopotential total-energy and force methods, we have studied the atomic and electronic structure of substitutional monolayer coverage of Ge on the cleaved Si(111) surface. Our results indicate that Ge atoms form a π-chain with an energy benefit of 0.32 eV /(surface atom) relative to the ideal substitutional configuration. The π-chain structure is semiconducting, and the resulting band structure is readily distinguishable from the Seiwatz chain model. |
| topic | U |
| uid | nat_lic_papers_NLZ178693413 |