Reactive sputtering of titanium boride
| ISSN: |
0040-6090
|
|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
|
| Topics: |
Physics
|
| Type of Medium: |
Electronic Resource
|
| URL: |
| _version_ | 1798291422953078784 |
|---|---|
| autor | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. |
| autorsonst | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0040-6090(89)90124-7 |
| datenlieferant | nat_lic_papers |
| fussnote | The process of reactive sputtering of titanium boride in a diborane-argon mixture has been studied. The influence of r.f. power and mass flow of reactive gas has been investigated. The decomposition and consumption of the process gas has been studied by mass spectrometry. Optical emission spectrometry was used to study the sputtering rates of titanium and boron. Deposited film composition was investigated by Rutherford backscattering analysis. Film deposition rate was measured at various deposited compositions.The process is found to be similar to the reactive sputtering of silicides in a silane-argon mixture. The effect of a hysteresis region, common in reactive sputtering, is absent. Instead, measurements indicate that the target becomes completely covered with boron below a well-defined power level for a constant mass flow of diborane. This region corresponds to almost pure boron deposition. At higher power levels, a compound is formed with an increasing metal content at higher power levels. |
| hauptsatz | hsatz_simple |
| identnr | NLZ17815931X |
| issn | 0040-6090 |
| journal_name | Thin Solid Films |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 172 (1989), S. 133-140 |
| search_space | articles |
| shingle_author_1 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. |
| shingle_author_2 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. |
| shingle_author_3 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. |
| shingle_author_4 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. |
| shingle_catch_all_1 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. Reactive sputtering of titanium boride 0040-6090 00406090 Elsevier |
| shingle_catch_all_2 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. Reactive sputtering of titanium boride 0040-6090 00406090 Elsevier |
| shingle_catch_all_3 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. Reactive sputtering of titanium boride 0040-6090 00406090 Elsevier |
| shingle_catch_all_4 | Larsson, T. Blom, H.-O. Berg, S. Ostling, M. Reactive sputtering of titanium boride 0040-6090 00406090 Elsevier |
| shingle_title_1 | Reactive sputtering of titanium boride |
| shingle_title_2 | Reactive sputtering of titanium boride |
| shingle_title_3 | Reactive sputtering of titanium boride |
| shingle_title_4 | Reactive sputtering of titanium boride |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:32:23.284Z |
| titel | Reactive sputtering of titanium boride |
| titel_suche | Reactive sputtering of titanium boride The process of reactive sputtering of titanium boride in a diborane-argon mixture has been studied. The influence of r.f. power and mass flow of reactive gas has been investigated. The decomposition and consumption of the process gas has been studied by mass spectrometry. Optical emission spectrometry was used to study the sputtering rates of titanium and boron. Deposited film composition was investigated by Rutherford backscattering analysis. Film deposition rate was measured at various deposited compositions.The process is found to be similar to the reactive sputtering of silicides in a silane-argon mixture. The effect of a hysteresis region, common in reactive sputtering, is absent. Instead, measurements indicate that the target becomes completely covered with boron below a well-defined power level for a constant mass flow of diborane. This region corresponds to almost pure boron deposition. At higher power levels, a compound is formed with an increasing metal content at higher power levels. |
| topic | U |
| uid | nat_lic_papers_NLZ17815931X |