Implementation of a TiN cap layer into conventional self-aligned RTP titanium disilicide MOS process

ISSN:
0167-9317
Source:
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:
Electrical Engineering, Measurement and Control Technology
Type of Medium:
Electronic Resource
URL:
http://linkinghub.elsevier.com/retrieve/pii/0167-9317(92)90517-U