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Implementation of a TiN cap la...
Implementation of a TiN cap layer into conventional self-aligned RTP titanium disilicide MOS process
Kaplan, W.
;
Zhang, S.-L.
;
Norstrom, H.
;
Ostling, M.
;
Lindberg, A.
Amsterdam : Elsevier
ISSN:
0167-9317
Source:
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:
Electrical Engineering, Measurement and Control Technology
Type of Medium:
Electronic Resource
URL:
http://linkinghub.elsevier.com/retrieve/pii/0167-9317(92)90517-U
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