Vapour phase epitaxial growth of high purity GaAs with the AsCl"3-Ga-N"2 system

Lin, L.-Y. ; Lin, Y.-W. ; Zhong, X.-R. ; Zhang, Y.-Y. ; Li, H.-L.

Amsterdam : Elsevier

ISSN:	0022-0248
Source:	Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:	Chemistry and Pharmacology Geosciences Physics
Type of Medium:	Electronic Resource
URL:	http://linkinghub.elsevier.com/retrieve/pii/0022-0248(82)90452-3