The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications
| ISSN: |
0022-0248
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|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
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| Topics: |
Chemistry and Pharmacology
Geosciences
Physics
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798290948433641474 |
|---|---|
| autor | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. |
| autorsonst | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0022-0248(77)90161-0 |
| datenlieferant | nat_lic_papers |
| fussnote | In this paper we review the growth of bulk single crystals and of epitaxial single crystalline layers of p-type InP. The electrical properties obtained for various dopants (Cd, Zn, Mg, Mn, Be) in bulk crystals and in epitaxial p-InP layers prepared via liquid phase epitaxy, chemical vapor deposition and molecular beam epitaxy are discussed and a comparison is made of the photoluminescence properties of acceptor impurities in bulk InP and MBE epilayers. Also, we evaluate the preparation of polycrystalline films of p-InP on foreign substrates in the context of n-CdS/p-InP solar cells and present preliminary results on the preparation of InP bicrystals with pure tilt boundaries about 〈111〉. |
| hauptsatz | hsatz_simple |
| identnr | NLZ177644575 |
| issn | 0022-0248 |
| journal_name | Journal of Crystal Growth |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 39 (1977), S. 137-150 |
| search_space | articles |
| shingle_author_1 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. |
| shingle_author_2 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. |
| shingle_author_3 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. |
| shingle_author_4 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. |
| shingle_catch_all_1 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications 0022-0248 00220248 Elsevier |
| shingle_catch_all_2 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications 0022-0248 00220248 Elsevier |
| shingle_catch_all_3 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications 0022-0248 00220248 Elsevier |
| shingle_catch_all_4 | Bachmann, K.J. Buehler, E. Miller, B.I. McFee, J.H. Thiel, F.A. The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications 0022-0248 00220248 Elsevier |
| shingle_title_1 | The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications |
| shingle_title_2 | The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications |
| shingle_title_3 | The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications |
| shingle_title_4 | The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:24:50.570Z |
| titel | The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications |
| titel_suche | The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications In this paper we review the growth of bulk single crystals and of epitaxial single crystalline layers of p-type InP. The electrical properties obtained for various dopants (Cd, Zn, Mg, Mn, Be) in bulk crystals and in epitaxial p-InP layers prepared via liquid phase epitaxy, chemical vapor deposition and molecular beam epitaxy are discussed and a comparison is made of the photoluminescence properties of acceptor impurities in bulk InP and MBE epilayers. Also, we evaluate the preparation of polycrystalline films of p-InP on foreign substrates in the context of n-CdS/p-InP solar cells and present preliminary results on the preparation of InP bicrystals with pure tilt boundaries about 〈111〉. |
| topic | V TE-TZ U |
| uid | nat_lic_papers_NLZ177644575 |