Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth
| ISSN: |
0022-0248
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|---|---|
| Source: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
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| Topics: |
Chemistry and Pharmacology
Geosciences
Physics
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| Type of Medium: |
Electronic Resource
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| URL: |
| _version_ | 1798290948405329920 |
|---|---|
| autor | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. |
| autorsonst | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. |
| book_url | http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90358-R |
| datenlieferant | nat_lic_papers |
| fussnote | Surface diffusion of Ga molecules during the MOMBE (metalorganic molecular beam epitaxy) growth of GaAs using TEGa (triethylgallium) was studied by measuring the RHEED (reflection high energy electron diffraction) intensity oscillations on the (001) GaAs vicinal surface. It is found that the obtained diffusion constant values for the MOMBE growth are the same as those for the solid source MBE growth. It is also found that the damping speed of the RHEED intensity oscillation on the (001) surface depends on the flux ratio of TEGa to Ga when both beams are supplied on the surface. It is concluded that some of the incident TEGa molecules pyrolyze into Ga atoms and migrate on the surface, that the others migrate as Ga alkyl molecules and pyrolyze at the steps or kinks, and that the diffusion lengths of Ga alkyl molecules are longer than those of Ga atoms. |
| hauptsatz | hsatz_simple |
| identnr | NLZ177542926 |
| issn | 0022-0248 |
| journal_name | Journal of Crystal Growth |
| materialart | 1 |
| package_name | Elsevier |
| publikationsort | Amsterdam |
| publisher | Elsevier |
| reference | 105 (1990), S. 185-190 |
| search_space | articles |
| shingle_author_1 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. |
| shingle_author_2 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. |
| shingle_author_3 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. |
| shingle_author_4 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. |
| shingle_catch_all_1 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth 0022-0248 00220248 Elsevier |
| shingle_catch_all_2 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth 0022-0248 00220248 Elsevier |
| shingle_catch_all_3 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth 0022-0248 00220248 Elsevier |
| shingle_catch_all_4 | Okuno, Y. Asahi, H. Kaneko, T. Kang, T.W. Gonda, S.-i. Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth 0022-0248 00220248 Elsevier |
| shingle_title_1 | Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth |
| shingle_title_2 | Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth |
| shingle_title_3 | Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth |
| shingle_title_4 | Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth |
| sigel_instance_filter | dkfz geomar wilbert ipn albert fhp |
| source_archive | Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| timestamp | 2024-05-06T08:24:50.570Z |
| titel | Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth |
| titel_suche | Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth Surface diffusion of Ga molecules during the MOMBE (metalorganic molecular beam epitaxy) growth of GaAs using TEGa (triethylgallium) was studied by measuring the RHEED (reflection high energy electron diffraction) intensity oscillations on the (001) GaAs vicinal surface. It is found that the obtained diffusion constant values for the MOMBE growth are the same as those for the solid source MBE growth. It is also found that the damping speed of the RHEED intensity oscillation on the (001) surface depends on the flux ratio of TEGa to Ga when both beams are supplied on the surface. It is concluded that some of the incident TEGa molecules pyrolyze into Ga atoms and migrate on the surface, that the others migrate as Ga alkyl molecules and pyrolyze at the steps or kinks, and that the diffusion lengths of Ga alkyl molecules are longer than those of Ga atoms. |
| topic | V TE-TZ U |
| uid | nat_lic_papers_NLZ177542926 |