Very low dislocation density GaAs on Si using superlattices grown by MOCVD

Soga, T. ; Nishikawa, H. ; Jimbo, T. ; Umeno, M.

Amsterdam : Elsevier

ISSN:	0022-0248
Source:	Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:	Chemistry and Pharmacology Geosciences Physics
Type of Medium:	Electronic Resource
URL:	http://linkinghub.elsevier.com/retrieve/pii/0022-0248(91)90506-Z