Depth profiling of iron impurities on GaAs surfaces using total reflection X-ray fluorescence
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1432-1130
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Source: |
Springer Online Journal Archives 1860-2000
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Topics: |
Chemistry and Pharmacology
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Notes: |
Abstract.  Depth profiling of iron impurities on GaAs surfaces is performed by means of total reflection X-ray fluorescence. A numerical processing procedure presented previously is used for the evaluation of the experimental data. A detection limit of 1011 atoms Fe/cm2 on GaAs surfaces has been achieved.
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Type of Medium: |
Electronic Resource
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URL: |