Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds
Golikova, E. G. ; Gorbylev, V. A. ; Davidyuk, N. Yu. ; Kureshov, V. A. ; Leshko, A. Yu. ; Lyutetskii, A. V. ; Pikhtin, N. A. ; Ryaboshtan, Yu. A. ; Simakov, V. A. ; Tarasov, I. S. ; Fetisova, N. V.
Springer
Published 2000
Springer
Published 2000
| ISSN: |
1090-6533
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract InGaAsP/InP laser heterostructures with two stressed quantum wells operating in the wavelength range 1.3–1.55 μm were obtained by VPE of organometallic compounds. An optical emission power of 2.4 W was reached for the laser diodes with 100-μm wide strips operated in the continuous lasing mode at 20°C. A minimum threshold current density was 260 A/cm2. A differential quantum efficiency ηd= 40% was obtained with a 1.9-mm-long Fabry-Perot resonator. The internal optical losses of the heterostructures are reduced to 2.6–4.2 cm−1.
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| Type of Medium: |
Electronic Resource
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| URL: |