In situ examination of the chemical etching of SiO2-Si structures using an atomic force microscope

ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract First results are reported of in situ visualization of the chemical etching of P+-ion implanted SiO2-Si structures in an aqueous HF solution using an atomic force microscope. The rates of SiO2 etching were determined and the kinetics of the photostimulated chemical etching of Si were investigated.
Type of Medium:
Electronic Resource
URL: