In situ examination of the chemical etching of SiO2-Si structures using an atomic force microscope
Bukharaev, A. A. ; Bukharaeva, A. A. ; Nurgazizov, N. I. ; Ovchinnikov, D. V.
Springer
Published 1998
Springer
Published 1998
ISSN: |
1090-6533
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Source: |
Springer Online Journal Archives 1860-2000
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Topics: |
Physics
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Notes: |
Abstract First results are reported of in situ visualization of the chemical etching of P+-ion implanted SiO2-Si structures in an aqueous HF solution using an atomic force microscope. The rates of SiO2 etching were determined and the kinetics of the photostimulated chemical etching of Si were investigated.
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Type of Medium: |
Electronic Resource
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URL: |