On the specific features and transformation of the band structure of mercury-based HTSC compounds

Elizarova, M. V. ; Lukin, A. O. ; Gasumyants, V. É.
Springer
Published 2000
ISSN:
1063-7834
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa2Ca n−1Cu n O2n+2+δ family (n=1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates of the main parameters of the band responsible for conduction in the normal phase of HgBa2Ca n−1Cu n O2n+2+δ are given for optimally doped samples. The character of the variation in these parameters with an increasing number n of the copper-oxygen layers is discussed. A trend toward broadening of the conduction band with increasing n is revealed, which can be due to the increase of the density-of-states (DOS) peak near the Fermi level with an increasing number of the CuO2 layers responsible for the formation of the conduction band. It is found that an increase in the number n leads to an increase in the fraction of localized carriers in the band owing to a more defective structure observed in the more complex phases of HgBa2Ca n−1Cu n O2n+2+δ. The variations in the band-structure parameters in going from under-to overdoped compositions in the HgBa2Ca n−1Cu n O2n+2+δ family are also discussed.
Type of Medium:
Electronic Resource
URL:
_version_ 1798295288000020481
autor Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
autorsonst Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
book_url http://dx.doi.org/10.1134/1.1332138
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLM198775199
issn 1063-7834
journal_name Physics of the solid state
materialart 1
notes Abstract A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa2Ca n−1Cu n O2n+2+δ family (n=1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates of the main parameters of the band responsible for conduction in the normal phase of HgBa2Ca n−1Cu n O2n+2+δ are given for optimally doped samples. The character of the variation in these parameters with an increasing number n of the copper-oxygen layers is discussed. A trend toward broadening of the conduction band with increasing n is revealed, which can be due to the increase of the density-of-states (DOS) peak near the Fermi level with an increasing number of the CuO2 layers responsible for the formation of the conduction band. It is found that an increase in the number n leads to an increase in the fraction of localized carriers in the band owing to a more defective structure observed in the more complex phases of HgBa2Ca n−1Cu n O2n+2+δ. The variations in the band-structure parameters in going from under-to overdoped compositions in the HgBa2Ca n−1Cu n O2n+2+δ family are also discussed.
package_name Springer
publikationsjahr_anzeige 2000
publikationsjahr_facette 2000
publikationsjahr_intervall 7999:2000-2004
publikationsjahr_sort 2000
publisher Springer
reference 42 (2000), S. 2188-2196
search_space articles
shingle_author_1 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
shingle_author_2 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
shingle_author_3 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
shingle_author_4 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
shingle_catch_all_1 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
On the specific features and transformation of the band structure of mercury-based HTSC compounds
Abstract A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa2Ca n−1Cu n O2n+2+δ family (n=1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates of the main parameters of the band responsible for conduction in the normal phase of HgBa2Ca n−1Cu n O2n+2+δ are given for optimally doped samples. The character of the variation in these parameters with an increasing number n of the copper-oxygen layers is discussed. A trend toward broadening of the conduction band with increasing n is revealed, which can be due to the increase of the density-of-states (DOS) peak near the Fermi level with an increasing number of the CuO2 layers responsible for the formation of the conduction band. It is found that an increase in the number n leads to an increase in the fraction of localized carriers in the band owing to a more defective structure observed in the more complex phases of HgBa2Ca n−1Cu n O2n+2+δ. The variations in the band-structure parameters in going from under-to overdoped compositions in the HgBa2Ca n−1Cu n O2n+2+δ family are also discussed.
1063-7834
10637834
Springer
shingle_catch_all_2 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
On the specific features and transformation of the band structure of mercury-based HTSC compounds
Abstract A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa2Ca n−1Cu n O2n+2+δ family (n=1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates of the main parameters of the band responsible for conduction in the normal phase of HgBa2Ca n−1Cu n O2n+2+δ are given for optimally doped samples. The character of the variation in these parameters with an increasing number n of the copper-oxygen layers is discussed. A trend toward broadening of the conduction band with increasing n is revealed, which can be due to the increase of the density-of-states (DOS) peak near the Fermi level with an increasing number of the CuO2 layers responsible for the formation of the conduction band. It is found that an increase in the number n leads to an increase in the fraction of localized carriers in the band owing to a more defective structure observed in the more complex phases of HgBa2Ca n−1Cu n O2n+2+δ. The variations in the band-structure parameters in going from under-to overdoped compositions in the HgBa2Ca n−1Cu n O2n+2+δ family are also discussed.
1063-7834
10637834
Springer
shingle_catch_all_3 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
On the specific features and transformation of the band structure of mercury-based HTSC compounds
Abstract A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa2Ca n−1Cu n O2n+2+δ family (n=1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates of the main parameters of the band responsible for conduction in the normal phase of HgBa2Ca n−1Cu n O2n+2+δ are given for optimally doped samples. The character of the variation in these parameters with an increasing number n of the copper-oxygen layers is discussed. A trend toward broadening of the conduction band with increasing n is revealed, which can be due to the increase of the density-of-states (DOS) peak near the Fermi level with an increasing number of the CuO2 layers responsible for the formation of the conduction band. It is found that an increase in the number n leads to an increase in the fraction of localized carriers in the band owing to a more defective structure observed in the more complex phases of HgBa2Ca n−1Cu n O2n+2+δ. The variations in the band-structure parameters in going from under-to overdoped compositions in the HgBa2Ca n−1Cu n O2n+2+δ family are also discussed.
1063-7834
10637834
Springer
shingle_catch_all_4 Elizarova, M. V.
Lukin, A. O.
Gasumyants, V. É.
On the specific features and transformation of the band structure of mercury-based HTSC compounds
Abstract A systematic analysis of the temperature dependences of the thermopower S(T) for different phases of the HgBa2Ca n−1Cu n O2n+2+δ family (n=1, 2, 3) at different doping levels is performed in the framework of a narrow-band phenomenological model. Quantitative estimates of the main parameters of the band responsible for conduction in the normal phase of HgBa2Ca n−1Cu n O2n+2+δ are given for optimally doped samples. The character of the variation in these parameters with an increasing number n of the copper-oxygen layers is discussed. A trend toward broadening of the conduction band with increasing n is revealed, which can be due to the increase of the density-of-states (DOS) peak near the Fermi level with an increasing number of the CuO2 layers responsible for the formation of the conduction band. It is found that an increase in the number n leads to an increase in the fraction of localized carriers in the band owing to a more defective structure observed in the more complex phases of HgBa2Ca n−1Cu n O2n+2+δ. The variations in the band-structure parameters in going from under-to overdoped compositions in the HgBa2Ca n−1Cu n O2n+2+δ family are also discussed.
1063-7834
10637834
Springer
shingle_title_1 On the specific features and transformation of the band structure of mercury-based HTSC compounds
shingle_title_2 On the specific features and transformation of the band structure of mercury-based HTSC compounds
shingle_title_3 On the specific features and transformation of the band structure of mercury-based HTSC compounds
shingle_title_4 On the specific features and transformation of the band structure of mercury-based HTSC compounds
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timestamp 2024-05-06T09:33:49.155Z
titel On the specific features and transformation of the band structure of mercury-based HTSC compounds
titel_suche On the specific features and transformation of the band structure of mercury-based HTSC compounds
topic U
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