Strain-induced photoreflectance spectra in the vicinity of the E 0 transition in GaAs/Si and InP/Si heterostructures
Kuz’menko, R. V. ; Ganzha, A. V. ; Bochurova, O. V. ; Domashevskaya, É. P. ; Schreiber, J. ; Hildebrandt, S. ; Mo, S. ; Peiner, E.
Springer
Published 1999
Springer
Published 1999
| ISSN: |
1063-7834
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract A study is reported of the structure of photoreflectance (PR) spectra in the vicinity of the E 0 transition from thin (d=1–5 µm) n-GaAs and n-InP films (n=1016–1017 cm−3) grown epitaxially on Si(001) substrates. A quantitative analysis of the spectra involving multi-component fitting shows that the electronic optical transition from the {3/2;±1/2} subband provides a dominant contribution to the intermediate-field electromodulation component in both systems. The splitting observed in the GaAS/Si PR spectra near the main peak are accounted for not by the strain-induced valence-band splitting but rather by a spectral superposition of the intermediate-field component due to the {3/2;±1/2} subband with a low-energy excitonic component. The analytically established transition energy E 0 3/2;±1/2 is used to calculate biaxial strains in epitaxial films.
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| Type of Medium: |
Electronic Resource
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| URL: |