Porous-silicon microcavities

ISSN:
0392-6737
Keywords:
Optoelectronic devices ; Other solid inorganic materials ; Electron states in low-dimensional structures (superlattices, quantum well-structures and multilayers) ; Quantum optics ; Conference proceedings
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary The properties and preliminar applications of porous-silicon (p-Si) microcavities are here reported. These structures are based on a planar resonator formed by two narrow-band high-reflectance distributed Bragg reflectors separated by a thin active optical layer, all of which are made of p-Si layers. The accurate control of the electrochemical dissolution of Si lets us realize p-Si multilayers with the desired refractive indices sequence. Large improvements of the emission properties of p-Si microcavities with respect to standard p-Si samples are observed: 1) increased emission intensity, 2) spectral narrowing of the emission band, and 3) high directionality in the emission pattern. Resonant-cavity light-emitting diodes with higher efficiencies and stabilities with respect to standard p-Si/metal devices are demonstrated. Reflectivity changes due to absorption saturation have been observed.
Type of Medium:
Electronic Resource
URL: