Current-voltage characteristics of porous-silicon structures
Diligenti, A. ; Nannini, A. ; Pennelli, G. ; Pieri, F. ; Pellegrini, V. ; Fuso, F. ; Allegrini, M.
Springer
Published 1996
Springer
Published 1996
| ISSN: |
0392-6737
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|---|---|
| Keywords: |
Optoelectronic devices ; Conference proceedings
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| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Summary I–V DC characteristics have been measured on metal/ porous-silicon structures. In particular, the measurements on metal/ free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/poroussilicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activtion energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifiyng contacts, are described.
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| Type of Medium: |
Electronic Resource
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| URL: |