The dependence of the exciton transition and the Fermi energy on the InyGa1−yAs well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

ISSN:
1573-4811
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Type of Medium:
Electronic Resource
URL: