Mechanism of adhesion improvement in ion-beam mixed Cu/SiO2
Chae, K. H. ; Jang, H. G. ; Choi, I. S. ; Jung, S. M. ; Kim, K. S. ; Whang, C. N.
Springer
Published 1994
Springer
Published 1994
| ISSN: |
1573-4803
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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| Notes: |
Abstract A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, X-ray photo-electron spectroscopy and scratch testing. The adhesion of the copper film was improved by a factor of three at a dose of 1.5 × 1016 Ar+ cm−2 by the ion-beam mixing at room temperature, while the high-temperature ion-beam mixing enhanced the adhesion by a factor of five. Ballistic mixing plays a role in the improvement of adhesion for the room-temperature ion mixing, and the creation of Cu2O phase induced by ion-beam mixing contributes to the enhancement of adhesion at high temperature.
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| Type of Medium: |
Electronic Resource
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| URL: |