Thin and superthin photoconductive CdSe films deposited at room substrate temperature

1573-4803

Springer Online Journal Archives 1860-2000

Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Abstract Low conductive and photosensitive CdSe films were deposited on substrates at room temperature. X-ray diffraction spectra showed a microcrystalline cubic structure for film thicknesses greater than 20 nm and an amorphous structure for film thicknesses below 10 nm. An optical band gap, E g 0 , of 1.6 eV was determined using the Tauc-dependence usually employed for amorphous semiconductors. The dark conductivity, σ, of 10−9 Ω−1 cm−1 was measured in the as-deposited state, but an increase of five orders of magnitude was observed after heating the layer above 450 K. High photosensitivity was observed under illumination with white light as well as with monochromatic light over a wide spectral region (400–750 nm). A conclusion is reached concerning the existence of compensated donor and acceptor defects in the as-deposited state.

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