Interstitial related defect of12B implanted into n- and p-type silicon
Frank, H. -P. ; Almeida, T. ; Diehl, E. ; Ergezinger, K. -H. ; Fischer, B. ; Ittermann, B. ; Mai, F. ; Seelinger, W. ; Weissenmayer, S. ; Welker, G. ; Ackermann, H. ; Stöckmann, H. -J.
Springer
Published 1993
Springer
Published 1993
| ISSN: |
1572-9540
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|---|---|
| Source: |
Springer Online Journal Archives 1860-2000
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| Topics: |
Physics
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| Notes: |
Abstract β-radiation detected nuclear magnetic resonance (β-NMR) measurements of12B occupying sites with noncubic surroundings after implantation into Si have been extended from p-type to moderately doped n-type material. The quadrupole split signals observed in both materials indicate the existence of the same interstitial related boron defect but with lower thermal stability in n-type Si.
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| Type of Medium: |
Electronic Resource
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| URL: |