β-NMR in II–VI semiconductors
Ittermann, B. ; Füllgrabe, M. ; Heemeier, M. ; Kroll, F. ; Mai, F. ; Marbach, K. ; Meier, P. ; Peters, D. ; Welker, G. ; Geithner, W. ; Kappertz, S. ; Wilbert, S. ; Neugart, R. ; Lievens, P. ; Georg, U. ; Keim, M.
Springer
Published 2000
Springer
Published 2000
ISSN: |
1572-9540
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Keywords: |
β-NMR ; ion implantation ; doping problems ; ZnSe
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Source: |
Springer Online Journal Archives 1860-2000
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Topics: |
Physics
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Notes: |
Abstract β-active probe nuclei are implanted in nominally undoped ZnSe crystals. β-radiation detected nuclear magnetic resonance (β-NMR) studies are described for two different probe nuclei, 8Li and 12B. This way, the implantation behavior of two “opposite”dopants, one acceptor (Li) and one donor (B) can be characterized by the same microscopic technique. Such characterizations are attempted in terms of the structure of intermediate or final lattice sites, defect charge states, or the kinetics of defect reactions and site changes.
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Type of Medium: |
Electronic Resource
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URL: |