Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications

ISSN:
1434-6036
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract. The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r}) = 8.5$ , unloaded quality factor (Q u ) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f}) = -79$ ppm/ $^{\circ}$ C). Addition of TiO2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r} = 12.67$ , Q u = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications.
Type of Medium:
Electronic Resource
URL:
_version_ 1798296124601139201
autor Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
autorsonst Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
book_url http://dx.doi.org/10.1140/epjb/e2004-00321-8
datenlieferant nat_lic_papers
hauptsatz hsatz_simple
identnr NLM189654783
issn 1434-6036
journal_name The European physical journal
materialart 1
notes Abstract. The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r}) = 8.5$ , unloaded quality factor (Q u ) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f}) = -79$ ppm/ $^{\circ}$ C). Addition of TiO2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r} = 12.67$ , Q u = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications.
package_name Springer
publikationsjahr_anzeige 2004
publikationsjahr_facette 2004
publikationsjahr_intervall 7999:2000-2004
publikationsjahr_sort 2004
publisher Springer
reference 41 (2004), S. 301-306
search_space articles
shingle_author_1 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
shingle_author_2 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
shingle_author_3 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
shingle_author_4 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
shingle_catch_all_1 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
Abstract. The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r}) = 8.5$ , unloaded quality factor (Q u ) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f}) = -79$ ppm/ $^{\circ}$ C). Addition of TiO2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r} = 12.67$ , Q u = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications.
1434-6036
14346036
Springer
shingle_catch_all_2 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
Abstract. The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r}) = 8.5$ , unloaded quality factor (Q u ) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f}) = -79$ ppm/ $^{\circ}$ C). Addition of TiO2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r} = 12.67$ , Q u = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications.
1434-6036
14346036
Springer
shingle_catch_all_3 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
Abstract. The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r}) = 8.5$ , unloaded quality factor (Q u ) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f}) = -79$ ppm/ $^{\circ}$ C). Addition of TiO2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r} = 12.67$ , Q u = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications.
1434-6036
14346036
Springer
shingle_catch_all_4 Surendran, K. P.
Santha, N.
Mohanan, P.
Sebastian, M. T.
Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
Abstract. The microwave dielectric properties of ZnAl2O4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO2. The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl2O4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r}) = 8.5$ , unloaded quality factor (Q u ) = 4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f}) = -79$ ppm/ $^{\circ}$ C). Addition of TiO2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl2O4-0.17TiO2. This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r} = 12.67$ , Q u = 9950 at 10.075 GHz) which can be exploited for microwave substrate applications.
1434-6036
14346036
Springer
shingle_title_1 Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
shingle_title_2 Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
shingle_title_3 Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
shingle_title_4 Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
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source_archive Springer Online Journal Archives 1860-2000
timestamp 2024-05-06T09:47:07.291Z
titel Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
titel_suche Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications
topic U
uid nat_lic_papers_NLM189654783