Magnetron sputtered gold contacts on n-GaAs
Buonaquisti, A. D. ; Matson, R. J. ; Russell, P. E. ; Holloway, P. H.
Chichester [u.a.] : Wiley-Blackwell
Published 1984
Chichester [u.a.] : Wiley-Blackwell
Published 1984
ISSN: |
0142-2421
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Keywords: |
Chemistry ; Polymer and Materials Science
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Source: |
Wiley InterScience Backfile Collection 1832-2000
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Topics: |
Physics
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Notes: |
DC planar magnetron sputtering has been used to deposit gold Schottky barrier electrical contacts on n-type GaAs. The electrical character of the contact was determined from current-voltage (I-V) and electron-beam-induced voltage (EBIV) data. These data showed that the Schottky barrier height of magnetron sputter-deposited contacts was lower than for vapor deposited contacts. The barrier-height was a function of the deposition rate for electronically isolated substrates, and was dependent upon both the surface treatment prior to contact deposition, and upon doping density and post-deposition heat treatment. These effects are discussed in terms of particle irradiation of the surface during contact deposition.
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Additional Material: |
3 Ill.
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Type of Medium: |
Electronic Resource
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URL: |