Submicron patterns in substituted polystyrene resists by focused-ion-beam lithography
Brault, R. G. ; Kubena, R. L. ; Jensen, J. E.
Stamford, Conn. [u.a.] : Wiley-Blackwell
Published 1983
Stamford, Conn. [u.a.] : Wiley-Blackwell
Published 1983
| ISSN: |
0032-3888
|
|---|---|
| Keywords: |
Chemistry ; Chemical Engineering
|
| Source: |
Wiley InterScience Backfile Collection 1832-2000
|
| Topics: |
Chemistry and Pharmacology
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Physics
|
| Notes: |
Submicron lines in negative working, substituted polystyrene resists by focused-ion-beam lithography were demonstrated. These features were transferred into an underlying molybdenum layer by plasma etching using the resist as an etch mask, with the minimum continuous line having a width of 0.20 μm.
|
| Additional Material: |
9 Ill.
|
| Type of Medium: |
Electronic Resource
|
| URL: |