Optical absorption driven by dynamical symmetry breaking in indium oxide
| Publication Date: |
2018-10-17
|
|---|---|
| Publisher: |
American Physical Society (APS)
|
| Print ISSN: |
1098-0121
|
| Electronic ISSN: |
1095-3795
|
| Topics: |
Physics
|
| Keywords: |
Semiconductors I: bulk
|
| Published by: |
| _version_ | 1836399069544579072 |
|---|---|
| autor | Andrew J. Morris and Bartomeu Monserrat |
| beschreibung | Author(s): Andrew J. Morris and Bartomeu Monserrat Indium oxide is a wide band gap semiconductor that provides the platform for most n -type transparent conductors. Optical absorption is dominated by a strong edge starting at the optical gap around 3.7 eV, but the material also exhibits a prominent absorption tail starting around 2.7 eV. We use first... [Phys. Rev. B 98, 161203(R)] Published Tue Oct 16, 2018 |
| citation_standardnr | 6345436 |
| datenlieferant | ipn_articles |
| feed_id | 52538 |
| feed_publisher | American Physical Society (APS) |
| feed_publisher_url | http://www.aps.org/ |
| insertion_date | 2018-10-17 |
| journaleissn | 1095-3795 |
| journalissn | 1098-0121 |
| publikationsjahr_anzeige | 2018 |
| publikationsjahr_facette | 2018 |
| publikationsjahr_intervall | 7984:2015-2019 |
| publikationsjahr_sort | 2018 |
| publisher | American Physical Society (APS) |
| quelle | Physical Review B |
| relation | http://link.aps.org/doi/10.1103/PhysRevB.98.161203 |
| schlagwort | Semiconductors I: bulk |
| search_space | articles |
| shingle_author_1 | Andrew J. Morris and Bartomeu Monserrat |
| shingle_author_2 | Andrew J. Morris and Bartomeu Monserrat |
| shingle_author_3 | Andrew J. Morris and Bartomeu Monserrat |
| shingle_author_4 | Andrew J. Morris and Bartomeu Monserrat |
| shingle_catch_all_1 | Optical absorption driven by dynamical symmetry breaking in indium oxide Semiconductors I: bulk Author(s): Andrew J. Morris and Bartomeu Monserrat Indium oxide is a wide band gap semiconductor that provides the platform for most n -type transparent conductors. Optical absorption is dominated by a strong edge starting at the optical gap around 3.7 eV, but the material also exhibits a prominent absorption tail starting around 2.7 eV. We use first... [Phys. Rev. B 98, 161203(R)] Published Tue Oct 16, 2018 Andrew J. Morris and Bartomeu Monserrat American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_catch_all_2 | Optical absorption driven by dynamical symmetry breaking in indium oxide Semiconductors I: bulk Author(s): Andrew J. Morris and Bartomeu Monserrat Indium oxide is a wide band gap semiconductor that provides the platform for most n -type transparent conductors. Optical absorption is dominated by a strong edge starting at the optical gap around 3.7 eV, but the material also exhibits a prominent absorption tail starting around 2.7 eV. We use first... [Phys. Rev. B 98, 161203(R)] Published Tue Oct 16, 2018 Andrew J. Morris and Bartomeu Monserrat American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_catch_all_3 | Optical absorption driven by dynamical symmetry breaking in indium oxide Semiconductors I: bulk Author(s): Andrew J. Morris and Bartomeu Monserrat Indium oxide is a wide band gap semiconductor that provides the platform for most n -type transparent conductors. Optical absorption is dominated by a strong edge starting at the optical gap around 3.7 eV, but the material also exhibits a prominent absorption tail starting around 2.7 eV. We use first... [Phys. Rev. B 98, 161203(R)] Published Tue Oct 16, 2018 Andrew J. Morris and Bartomeu Monserrat American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_catch_all_4 | Optical absorption driven by dynamical symmetry breaking in indium oxide Semiconductors I: bulk Author(s): Andrew J. Morris and Bartomeu Monserrat Indium oxide is a wide band gap semiconductor that provides the platform for most n -type transparent conductors. Optical absorption is dominated by a strong edge starting at the optical gap around 3.7 eV, but the material also exhibits a prominent absorption tail starting around 2.7 eV. We use first... [Phys. Rev. B 98, 161203(R)] Published Tue Oct 16, 2018 Andrew J. Morris and Bartomeu Monserrat American Physical Society (APS) 1098-0121 10980121 1095-3795 10953795 |
| shingle_title_1 | Optical absorption driven by dynamical symmetry breaking in indium oxide |
| shingle_title_2 | Optical absorption driven by dynamical symmetry breaking in indium oxide |
| shingle_title_3 | Optical absorption driven by dynamical symmetry breaking in indium oxide |
| shingle_title_4 | Optical absorption driven by dynamical symmetry breaking in indium oxide |
| timestamp | 2025-06-30T23:37:06.792Z |
| titel | Optical absorption driven by dynamical symmetry breaking in indium oxide |
| titel_suche | Optical absorption driven by dynamical symmetry breaking in indium oxide |
| topic | U |
| uid | ipn_articles_6345436 |