Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
| Publication Date: |
2018-09-25
|
|---|---|
| Publisher: |
Institute of Physics (IOP)
|
| Electronic ISSN: |
1367-2630
|
| Topics: |
Physics
|
| Published by: |
| _version_ | 1836399057156702209 |
|---|---|
| autor | J D Lee, Youngjae Kim and Chil-Min Kim |
| beschreibung | A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. |
| citation_standardnr | 6336926 |
| datenlieferant | ipn_articles |
| feed_id | 3941 |
| feed_publisher | Institute of Physics (IOP) |
| feed_publisher_url | http://www.iop.org/ |
| insertion_date | 2018-09-25 |
| journaleissn | 1367-2630 |
| publikationsjahr_anzeige | 2018 |
| publikationsjahr_facette | 2018 |
| publikationsjahr_intervall | 7984:2015-2019 |
| publikationsjahr_sort | 2018 |
| publisher | Institute of Physics (IOP) |
| quelle | New Journal of Physics |
| relation | http://iopscience.iop.org/1367-2630/20/9/093029 |
| search_space | articles |
| shingle_author_1 | J D Lee, Youngjae Kim and Chil-Min Kim |
| shingle_author_2 | J D Lee, Youngjae Kim and Chil-Min Kim |
| shingle_author_3 | J D Lee, Youngjae Kim and Chil-Min Kim |
| shingle_author_4 | J D Lee, Youngjae Kim and Chil-Min Kim |
| shingle_catch_all_1 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
| shingle_catch_all_2 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
| shingle_catch_all_3 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
| shingle_catch_all_4 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
| shingle_title_1 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
| shingle_title_2 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
| shingle_title_3 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
| shingle_title_4 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
| timestamp | 2025-06-30T23:36:55.441Z |
| titel | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
| titel_suche | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
| topic | U |
| uid | ipn_articles_6336926 |