Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics

J D Lee, Youngjae Kim and Chil-Min Kim
Institute of Physics (IOP)
Published 2018
Publication Date:
2018-09-25
Publisher:
Institute of Physics (IOP)
Electronic ISSN:
1367-2630
Topics:
Physics
Published by:
_version_ 1836399057156702209
autor J D Lee, Youngjae Kim and Chil-Min Kim
beschreibung A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements.
citation_standardnr 6336926
datenlieferant ipn_articles
feed_id 3941
feed_publisher Institute of Physics (IOP)
feed_publisher_url http://www.iop.org/
insertion_date 2018-09-25
journaleissn 1367-2630
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher Institute of Physics (IOP)
quelle New Journal of Physics
relation http://iopscience.iop.org/1367-2630/20/9/093029
search_space articles
shingle_author_1 J D Lee, Youngjae Kim and Chil-Min Kim
shingle_author_2 J D Lee, Youngjae Kim and Chil-Min Kim
shingle_author_3 J D Lee, Youngjae Kim and Chil-Min Kim
shingle_author_4 J D Lee, Youngjae Kim and Chil-Min Kim
shingle_catch_all_1 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements.
J D Lee, Youngjae Kim and Chil-Min Kim
Institute of Physics (IOP)
1367-2630
13672630
shingle_catch_all_2 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements.
J D Lee, Youngjae Kim and Chil-Min Kim
Institute of Physics (IOP)
1367-2630
13672630
shingle_catch_all_3 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements.
J D Lee, Youngjae Kim and Chil-Min Kim
Institute of Physics (IOP)
1367-2630
13672630
shingle_catch_all_4 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements.
J D Lee, Youngjae Kim and Chil-Min Kim
Institute of Physics (IOP)
1367-2630
13672630
shingle_title_1 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
shingle_title_2 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
shingle_title_3 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
shingle_title_4 Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
timestamp 2025-06-30T23:36:55.441Z
titel Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
titel_suche Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
topic U
uid ipn_articles_6336926