Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics
Publication Date: |
2018-09-25
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Publisher: |
Institute of Physics (IOP)
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Electronic ISSN: |
1367-2630
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Topics: |
Physics
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Published by: |
_version_ | 1836399057156702209 |
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autor | J D Lee, Youngjae Kim and Chil-Min Kim |
beschreibung | A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. |
citation_standardnr | 6336926 |
datenlieferant | ipn_articles |
feed_id | 3941 |
feed_publisher | Institute of Physics (IOP) |
feed_publisher_url | http://www.iop.org/ |
insertion_date | 2018-09-25 |
journaleissn | 1367-2630 |
publikationsjahr_anzeige | 2018 |
publikationsjahr_facette | 2018 |
publikationsjahr_intervall | 7984:2015-2019 |
publikationsjahr_sort | 2018 |
publisher | Institute of Physics (IOP) |
quelle | New Journal of Physics |
relation | http://iopscience.iop.org/1367-2630/20/9/093029 |
search_space | articles |
shingle_author_1 | J D Lee, Youngjae Kim and Chil-Min Kim |
shingle_author_2 | J D Lee, Youngjae Kim and Chil-Min Kim |
shingle_author_3 | J D Lee, Youngjae Kim and Chil-Min Kim |
shingle_author_4 | J D Lee, Youngjae Kim and Chil-Min Kim |
shingle_catch_all_1 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
shingle_catch_all_2 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
shingle_catch_all_3 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
shingle_catch_all_4 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics A new physical insight into the ultrafast information communication can be gained from the reversible and robust petahertz (PHz, 10 15 Hz) current induced by a strong few-cycle optical waveform in large band-gap dielectrics. We explore an asymmetric conduction of the petahertz current using a heterojunction of low-hole-mass and low-electron-mass dielectrics and devise various functionalities enabling the petahertz signal processing, like diode, switch, and diode transistor. We then propose a model of one-bit optical nonvolatile random-access memory (RAM) by assembling those functionalities and demonstrate its petahertz operation. Further, we suggest the scalability up to a four-bit data manipulation based on the 2 × 2 array of four one-bit RAM elements. J D Lee, Youngjae Kim and Chil-Min Kim Institute of Physics (IOP) 1367-2630 13672630 |
shingle_title_1 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
shingle_title_2 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
shingle_title_3 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
shingle_title_4 | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
timestamp | 2025-06-30T23:36:55.441Z |
titel | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
titel_suche | Model for petahertz optical memory based on a manipulation of the optical-field-induced current in dielectrics |
topic | U |
uid | ipn_articles_6336926 |