Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$

Publication Date:
2018-09-12
Publisher:
American Physical Society (APS)
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Keywords:
Semiconductors I: bulk
Published by:
http://www.aps.org/
_version_ 1836399049527263233
autor R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
beschreibung Author(s): R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord In implantation experiments, the implanted particle is shot with a certain energy into the material and comes to rest at a site which may not correspond to the final position. The rearrangements of the surrounding atoms to accommodate the particle, i.e., the reaction with the host atoms may require ... [Phys. Rev. B 98, 115201] Published Tue Sep 11, 2018
citation_standardnr 6331201
datenlieferant ipn_articles
feed_id 52538
feed_publisher American Physical Society (APS)
feed_publisher_url http://www.aps.org/
insertion_date 2018-09-12
journaleissn 1095-3795
journalissn 1098-0121
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher American Physical Society (APS)
quelle Physical Review B
relation http://link.aps.org/doi/10.1103/PhysRevB.98.115201
schlagwort Semiconductors I: bulk
search_space articles
shingle_author_1 R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
shingle_author_2 R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
shingle_author_3 R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
shingle_author_4 R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
shingle_catch_all_1 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
Semiconductors I: bulk
Author(s): R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord In implantation experiments, the implanted particle is shot with a certain energy into the material and comes to rest at a site which may not correspond to the final position. The rearrangements of the surrounding atoms to accommodate the particle, i.e., the reaction with the host atoms may require ... [Phys. Rev. B 98, 115201] Published Tue Sep 11, 2018
R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_2 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
Semiconductors I: bulk
Author(s): R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord In implantation experiments, the implanted particle is shot with a certain energy into the material and comes to rest at a site which may not correspond to the final position. The rearrangements of the surrounding atoms to accommodate the particle, i.e., the reaction with the host atoms may require ... [Phys. Rev. B 98, 115201] Published Tue Sep 11, 2018
R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_3 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
Semiconductors I: bulk
Author(s): R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord In implantation experiments, the implanted particle is shot with a certain energy into the material and comes to rest at a site which may not correspond to the final position. The rearrangements of the surrounding atoms to accommodate the particle, i.e., the reaction with the host atoms may require ... [Phys. Rev. B 98, 115201] Published Tue Sep 11, 2018
R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_4 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
Semiconductors I: bulk
Author(s): R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord In implantation experiments, the implanted particle is shot with a certain energy into the material and comes to rest at a site which may not correspond to the final position. The rearrangements of the surrounding atoms to accommodate the particle, i.e., the reaction with the host atoms may require ... [Phys. Rev. B 98, 115201] Published Tue Sep 11, 2018
R. C. Vilão, R. B. L. Vieira, H. V. Alberto, J. M. Gil, A. Weidinger, R. L. Lichti, P. W. Mengyan, B. B. Baker, and J. S. Lord
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_title_1 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
shingle_title_2 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
shingle_title_3 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
shingle_title_4 Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
timestamp 2025-06-30T23:36:46.088Z
titel Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
titel_suche Barrier model in muon implantation and application to ${\mathrm{Lu}}_{2}{\mathrm{O}}_{3}$
topic U
uid ipn_articles_6331201