Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures

Publication Date:
2018-05-25
Publisher:
American Association for the Advancement of Science (AAAS)
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
Chemistry and Pharmacology
Geosciences
Computer Science
Medicine
Natural Sciences in General
Physics
Keywords:
Materials Science, Physics
Published by:
_version_ 1836398943758450688
autor Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
beschreibung Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )–tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.
citation_standardnr 6267213
datenlieferant ipn_articles
feed_id 25
feed_publisher American Association for the Advancement of Science (AAAS)
feed_publisher_url http://www.aaas.org/
insertion_date 2018-05-25
journaleissn 1095-9203
journalissn 0036-8075
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher American Association for the Advancement of Science (AAAS)
quelle Science
relation http://science.sciencemag.org/cgi/content/short/360/6391/893?rss=1
schlagwort Materials Science, Physics
search_space articles
shingle_author_1 Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
shingle_author_2 Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
shingle_author_3 Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
shingle_author_4 Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
shingle_catch_all_1 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
Materials Science, Physics
Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )–tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.
Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
American Association for the Advancement of Science (AAAS)
0036-8075
00368075
1095-9203
10959203
shingle_catch_all_2 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
Materials Science, Physics
Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )–tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.
Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
American Association for the Advancement of Science (AAAS)
0036-8075
00368075
1095-9203
10959203
shingle_catch_all_3 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
Materials Science, Physics
Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )–tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.
Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
American Association for the Advancement of Science (AAAS)
0036-8075
00368075
1095-9203
10959203
shingle_catch_all_4 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
Materials Science, Physics
Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )–tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.
Jin, C., Kim, J., Utama, M. I. B., Regan, E. C., Kleemann, H., Cai, H., Shen, Y., Shinner, M. J., Sengupta, A., Watanabe, K., Taniguchi, T., Tongay, S., Zettl, A., Wang, F.
American Association for the Advancement of Science (AAAS)
0036-8075
00368075
1095-9203
10959203
shingle_title_1 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
shingle_title_2 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
shingle_title_3 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
shingle_title_4 Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
timestamp 2025-06-30T23:35:07.282Z
titel Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
titel_suche Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures
topic W
V
TE-TZ
SQ-SU
WW-YZ
TA-TD
U
uid ipn_articles_6267213