Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$

Publication Date:
2018-02-23
Publisher:
American Physical Society (APS)
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Keywords:
Electronic structure and strongly correlated systems
Published by:
http://www.aps.org/
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autor T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
beschreibung Author(s): T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at d... [Phys. Rev. B 97, 085143] Published Thu Feb 22, 2018
citation_standardnr 6173140
datenlieferant ipn_articles
feed_id 52538
feed_publisher American Physical Society (APS)
feed_publisher_url http://www.aps.org/
insertion_date 2018-02-23
journaleissn 1095-3795
journalissn 1098-0121
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher American Physical Society (APS)
quelle Physical Review B
relation http://link.aps.org/doi/10.1103/PhysRevB.97.085143
schlagwort Electronic structure and strongly correlated systems
search_space articles
shingle_author_1 T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
shingle_author_2 T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
shingle_author_3 T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
shingle_author_4 T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
shingle_catch_all_1 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
Electronic structure and strongly correlated systems
Author(s): T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at d... [Phys. Rev. B 97, 085143] Published Thu Feb 22, 2018
T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_2 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
Electronic structure and strongly correlated systems
Author(s): T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at d... [Phys. Rev. B 97, 085143] Published Thu Feb 22, 2018
T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_3 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
Electronic structure and strongly correlated systems
Author(s): T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at d... [Phys. Rev. B 97, 085143] Published Thu Feb 22, 2018
T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_4 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
Electronic structure and strongly correlated systems
Author(s): T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at d... [Phys. Rev. B 97, 085143] Published Thu Feb 22, 2018
T. S. Holstad, D. M. Evans, A. Ruff, D. R. Småbråten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, and D. Meier
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_title_1 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
shingle_title_2 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
shingle_title_3 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
shingle_title_4 Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
timestamp 2025-06-30T23:32:57.253Z
titel Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
titel_suche Electronic bulk and domain wall properties in $B$-site doped hexagonal ${\mathrm{ErMnO}}_{3}$
topic U
uid ipn_articles_6173140