Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene

Publication Date:
2018-01-12
Publisher:
American Physical Society (APS)
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Published by:
_version_ 1836398746313687042
autor T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
beschreibung Author(s): T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states p... [Phys. Rev. B 97, 045301] Published Thu Jan 11, 2018
citation_standardnr 6137562
datenlieferant ipn_articles
feed_id 52538
feed_publisher American Physical Society (APS)
feed_publisher_url http://www.aps.org/
insertion_date 2018-01-12
journaleissn 1095-3795
journalissn 1098-0121
publikationsjahr_anzeige 2018
publikationsjahr_facette 2018
publikationsjahr_intervall 7984:2015-2019
publikationsjahr_sort 2018
publisher American Physical Society (APS)
quelle Physical Review B
relation http://link.aps.org/doi/10.1103/PhysRevB.97.045301
schlagwort Semiconductors II: surfaces, interfaces, microstructures, and related topics
search_space articles
shingle_author_1 T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
shingle_author_2 T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
shingle_author_3 T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
shingle_author_4 T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
shingle_catch_all_1 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Author(s): T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states p... [Phys. Rev. B 97, 045301] Published Thu Jan 11, 2018
T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_2 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Author(s): T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states p... [Phys. Rev. B 97, 045301] Published Thu Jan 11, 2018
T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_3 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Author(s): T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states p... [Phys. Rev. B 97, 045301] Published Thu Jan 11, 2018
T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_catch_all_4 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Author(s): T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states p... [Phys. Rev. B 97, 045301] Published Thu Jan 11, 2018
T. L. M. Lane, M. Anđelković, J. R. Wallbank, L. Covaci, F. M. Peeters, and V. I. Fal'ko
American Physical Society (APS)
1098-0121
10980121
1095-3795
10953795
shingle_title_1 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
shingle_title_2 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
shingle_title_3 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
shingle_title_4 Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
timestamp 2025-06-30T23:31:58.701Z
titel Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
titel_suche Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene
topic U
uid ipn_articles_6137562