Search Results - (Author, Cooperation:Z. X. Gong)
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1P. Richerme ; Z. X. Gong ; A. Lee ; C. Senko ; J. Smith ; M. Foss-Feig ; S. Michalakis ; A. V. Gorshkov ; C. Monroe
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-07-11Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Jin, S. ; Wen, X. Y. ; Gong, Z. X. ; Zhu, Y. C.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Ceramic coatings of zirconium nitride have been fabricated on nickel, silicon, and M2 high-speed steel by methods of reactive magnetron sputtering ion plating (RMSP) and the dynamic ion mixing (DIM). The microhardness values of ZrN film prepared by RMSP with different nitrogen partial pressure have been discussed. The scratch tests provide that the adhesion of ZrN film produced by dynamic ion mixing is better than that by reactive magnetron sputtering ion plating. Auger electron spectroscopy analysis is used to analyze the composition distribution of ZrN film prepared by DIM and indicates that there is a transitional layer between the ZrN film and substrate. Meanwhile, by cross-sectional and the plan-view transmission electron microscopy, it is observed that the interlayer of amorphous structure exists in the interface zone between ZrN film and substrate. According to the analysis of energy-dispersive x-ray analysis patterns, the composition of this amorphous region fabricated by RMSP is Ni51Zr49 (≈NiZr), as is that fabricated by DIM. (Up to now it has not been reported that the amorphous transitional layer occurs in reactive magnetron sputtering ion plating). The reason why the adhesion of coating by DIM is better than that by RMSP is not the formation of the transitional layer in ion-beam-assisted deposition but the particle bombardment effects on the bulk of the thin film.Type of Medium: Electronic ResourceURL: -
3Jin, S. ; Li, X. N. ; Zhang, Z. ; Dong, C. ; Gong, Z. X. ; Bender, H. ; Ma, T. C.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Iron-silicide has been formed by ion implantation of iron into silicon (111). In the as-implanted sample, a new type of orthorhombic FeSi2 phase was found. Although the lattice parameters of the new phase are the same as those of the known semiconductor β-FeSi2, its point group and space group were different and determined to be mmm and Pbca, respectively. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Chen, G.-x. ; Tan, R.-y. ; Gong, Z.-x. ; Huang, Y.-p. ; Wang, S.-z. ; Cao (Tien-chin Tsao), T.-g.
Amsterdam : ElsevierStaff ViewISSN: 0301-4622Keywords: Catch mechanism ; Catch state ; Filament network ; Paramyosin ; Phosphorylation ; Relaxed stateSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: