Search Results - (Author, Cooperation:Z. Q. Wu)
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1Latest Papers from Table of Contents or Articles in PressB. Nystedt ; N. R. Street ; A. Wetterbom ; A. Zuccolo ; Y. C. Lin ; D. G. Scofield ; F. Vezzi ; N. Delhomme ; S. Giacomello ; A. Alexeyenko ; R. Vicedomini ; K. Sahlin ; E. Sherwood ; M. Elfstrand ; L. Gramzow ; K. Holmberg ; J. Hallman ; O. Keech ; L. Klasson ; M. Koriabine ; M. Kucukoglu ; M. Kaller ; J. Luthman ; F. Lysholm ; T. Niittyla ; A. Olson ; N. Rilakovic ; C. Ritland ; J. A. Rossello ; J. Sena ; T. Svensson ; C. Talavera-Lopez ; G. Theissen ; H. Tuominen ; K. Vanneste ; Z. Q. Wu ; B. Zhang ; P. Zerbe ; L. Arvestad ; R. Bhalerao ; J. Bohlmann ; J. Bousquet ; R. Garcia Gil ; T. R. Hvidsten ; P. de Jong ; J. MacKay ; M. Morgante ; K. Ritland ; B. Sundberg ; S. L. Thompson ; Y. Van de Peer ; B. Andersson ; O. Nilsson ; P. K. Ingvarsson ; J. Lundeberg ; S. Jansson
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-05-24Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Conserved Sequence/genetics ; DNA Transposable Elements/genetics ; *Evolution, Molecular ; Gene Silencing ; Genes, Plant/genetics ; Genome, Plant/*genetics ; Genomics ; Internet ; Introns/genetics ; Phenotype ; Picea/*genetics ; RNA, Untranslated/genetics ; Sequence Analysis, DNA ; Terminal Repeat Sequences/genetics ; Transcription, Genetic/geneticsPublished by: -
2Articles: DFG German National LicensesYuan, X. Y. ; Wu, Z. Q. ; Hu, A. ; Jiang, S. S. ; Qiu, Y. ; Khatanova, N. A. ; Ilyushin, R. S.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Ta/Al multilayer films with a modulation wavelength of 7.0 nm were grown using magnetron sputtering. The Bragg θ-2θ scan pattern and the plate film photograph of x-ray diffraction reveal that the sample has Ta(110) and A1(111) axial textures with a mosaic spread of about ±5° and coherency strains. The structure change of the multilayer sample after annealing at 550 °C for 2 h is determined by the plate film photography of x-ray diffraction to study the thermal stability. It is found that after annealing a large amount of Ta and Al atoms at the interfaces are combined into TaAl3 with [(202)+(002)] textures.Type of Medium: Electronic ResourceURL: -
3Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Effects of external hydrostatic pressure up to 7 kbar on the Au-Ge binary phase diagram and on the arsenic sublimation are evaluated by thermodynamic calculations. Experimental observations in the eutectic Au-28 at. % Ge/GaAs contacts which were annealed at vacuum and in a 7 kbar argon gas, respectively, are taken as illustrative examples for the comparison with the calculated results. It is concluded that pressures up to 7 kbar shift only slightly the phase boundaries in the Au-Ge phase diagram that were obtained in standard conditions (1 atm) and a pure argon gas with a pressure of 7 kbar acts as a good capsulation to prevent species As from sublimation. The measurements indicate that the film/GaAs interface and the film surface in the contacts annealed at 7 kbar are rich in Ge and are morphologically smooth. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: In this letter, we present the transmission electron microscopy and x-ray diffraction studies of Pd/GaAs (001) contacts that were annealed in an argon ambient with a pressure of 7×108 Pa. Our observations show that this ambient inhibits not only the decomposition of As-rich phases but the reactions accompanying the As sublimation for the Pd/GaAs (001) contacts and that the reactions are described as 4Pd+GaAs→Pd4GaAs (between 25 and 200 °C) and 3Pd+2GaAs→2PdGa+PdAs2 (between 350 and 800 °C).Type of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The metallizations of AuGeNi/GaAs(001) and Au/GaAs(001) contacts at 4×10−3 Pa and 7×108 Pa pressure have been analyzed by using x-ray diffraction, transmission electron microscopy, and scanning electron microscopy. Our observations show that the high-pressure ambient inhibits the As sublimation loss and that only interdiffusion takes place without any formation of compounds in those contacts annealed in argon at 7×108 Pa. The experimental results are also discussed on the basis of phase diagrams.Type of Medium: Electronic ResourceURL: -
6Articles: DFG German National LicensesXu, Wentao ; Hou, J. G. ; Wu, Z. Q.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We studied the growth of C60 thin films on a layer of surfactant Sb which was predeposited on mica substrates with vacuum vapor deposition method. It was found that the growth behaviors of C60 films are significantly affected by the surfactant Sb and the substrate temperature. (112)- and (111)-oriented C60 single-crystal films with large C60 single crystals were obtained when the substrate temperatures were 200 and 215 °C, respectively. The growth mechanisms of the Sb mediated C60 films were attributed to the reduced surface diffusion rate of adsorbed C60 molecules and the lowered boundary potential energy of C60 islands by surfactant Sb. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
7Articles: DFG German National LicensesStaff View
ISSN: 1573-4811Source: Springer Online Journal Archives 1860-2000Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsType of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesQian, B. J. ; Qin, J. ; Wu, Z. Q. ; Wu, C. X. ; Hu, P. P. ; Zhao, J. X.
New York, NY [u.a.] : Wiley-Blackwell
Published 1992Staff ViewISSN: 0021-8995Keywords: Chemistry ; Polymer and Materials ScienceSource: Wiley InterScience Backfile Collection 1832-2000Topics: Chemistry and PharmacologyMechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPhysicsNotes: The texture of a polymer (on fiber) is effectively developed by heat and stress. In this article, the chief material studied is acrylics, usually polyacrylonitile copolymer (PAC fiber) produced by Jingshan Jinglun Fiber Production Plant. In industry, the Jinglun acrylic fiber is heat treated, using saturated steam, at a temperature of 120-130°C to enhance its loop strength, reduce shrinkage, and stabilize crimp. At 140°C, the fiber becomes tacky and its good textile properties seem to deteriorate. At 150-160°C, the texture of the fiber seems to be deeply modified. Tested by differential scanning calorimetry (DSC) with the fiber immersed in a swelling agent (usually termed swelling DSC, abbreviated as SDSC), in addition to the entanglement peaks situated on the latter part of the thermogram of the Jinglun fiber, a new endothermic peak before the crystalline peak (actually, paracrystalline in the case of acrylic fiber) was discovered. The elastic recovery properties of the treated fiber under partially swelling conditions were improved. This seems to indicate that this preparacrystalline peak might also be concerned with entanglements.Additional Material: 18 Ill.Type of Medium: Electronic ResourceURL: