Search Results - (Author, Cooperation:Z. Bao)
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1Latest Papers from Table of Contents or Articles in PressX. Cui ; K. Chen ; H. Xing ; Q. Yang ; R. Krishna ; Z. Bao ; H. Wu ; W. Zhou ; X. Dong ; Y. Han ; B. Li ; Q. Ren ; M. J. Zaworotko ; B. Chen
American Association for the Advancement of Science (AAAS)
Published 2016Staff ViewPublication Date: 2016-05-21Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressB. C. Tee ; A. Chortos ; A. Berndt ; A. K. Nguyen ; A. Tom ; A. McGuire ; Z. C. Lin ; K. Tien ; W. G. Bae ; H. Wang ; P. Mei ; H. H. Chou ; B. Cui ; K. Deisseroth ; T. N. Ng ; Z. Bao
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-10-17Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Cerebral Cortex/cytology/physiology ; Hand/anatomy & histology/innervation/physiology ; Humans ; In Vitro Techniques ; *Mechanoreceptors ; Mice ; *Neural Prostheses ; Optogenetics ; Pressure ; Skin/*innervation ; *Touch ; Transcutaneous Electric Nerve Stimulation/*methods ; Transistors, ElectronicPublished by: -
3Latest Papers from Table of Contents or Articles in PressG. Giri ; E. Verploegen ; S. C. Mannsfeld ; S. Atahan-Evrenk ; H. Kim do ; S. Y. Lee ; H. A. Becerril ; A. Aspuru-Guzik ; M. F. Toney ; Z. Bao
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-12-24Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressKim, Y., Chortos, A., Xu, W., Liu, Y., Oh, J. Y., Son, D., Kang, J., Foudeh, A. M., Zhu, C., Lee, Y., Niu, S., Liu, J., Pfattner, R., Bao, Z., Lee, T.-W.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-06-01Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Engineering, Materials SciencePublished by: -
5Latest Papers from Table of Contents or Articles in PressHuang, S., Zhang, B., Chen, Y., Liu, H., Liu, Y., Li, X., Bao, Z., Song, Z., Wang, Z.
The American Society for Pharmacology and Experimental Therapeutics
Published 2018Staff ViewPublication Date: 2018-02-09Publisher: The American Society for Pharmacology and Experimental TherapeuticsPrint ISSN: 0022-3565Electronic ISSN: 1521-0103Topics: MedicinePublished by: -
6Latest Papers from Table of Contents or Articles in PressLee, Y., Oh, J. Y., Xu, W., Kim, O., Kim, T. R., Kang, J., Kim, Y., Son, D., Tok, J. B.- H., Park, M. J., Bao, Z., Lee, T.-W.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-11-24Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
7Articles: DFG German National LicensesBao, Z. X. ; Schmidt, V. Hugo ; Howell, Francis L.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Phase transitions in KH2PO4 (KDP) and RbH2PO4 (RDP) at room temperature for pressures up to 14 GPa have been determined by means of capacitance measurements using a diamond anvil cell. Phase transitions occur in KDP near 2.5 and 7.0 GPa. In RDP, a transition was detected near 5.4 GPa.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesMartin, S. ; Dodabalapur, A. ; Bao, Z. ; Crone, B. ; Katz, H. E. ; Li, W. ; Passner, A. ; Rogers, J. A.
[S.l.] : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The low frequency noise properties of organic thin film transistors are studied here as a function of frequency and bias. Various n-channel and p-channel devices were evaluated and found to exhibit 1/f-type of noise in the 1 Hz–10 kHz range. The drain current noise is found to vary proportionally with drain current. The noise level is comparable to that found in Si metal–oxide–semiconductor field-effect transistors within the operation region of the devices, owing to the smaller drain currents in organic transistors, although the intrinsic noise is considerably higher in the organic transistors. The viability of using the organic materials in low noise circuits is demonstrated by a ring oscillator. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesBao, Z. L. ; Wang, F. R. ; Jiang, Q. D. ; Wang, S. Z. ; Ye, Z. Y. ; Wu, K. ; Li, C. Y. ; Yin, D. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: YBaCuO superconducting thin films were prepared by multilayer deposition on different kinds of substrates. High Tc with an onset of 94 K and a zero resistance at 84 K has been obtained by deposition on pure ZrO2 substrates. The nature of zero resistance as well as the dR/dT characteristic above Tc and the influence of substrates are discussed.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesCrone, B. K. ; Dodabalapur, A. ; Sarpeshkar, R. ; Filas, R. W. ; Lin, Y.-Y. ; Bao, Z. ; O'Neill, J. H. ; Li, W. ; Katz, H. E.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have used a simple model description of single field effect transistor characteristics to design organic complementary circuits ranging in complexity from simple inverters through 48-stage shift registers and three-bit row decoders. The circuits were fabricated using standard silicon photolithographic techniques to define the metal, insulator, and interconnect levels. The ohmic source and drain contacts and part of the interconnect metallization were formed by electroless/immersion deposition of Ni-P/Au on prepatterned TiN. The n-type and p-type organic semicondcutors were evaporated onto these substrates to complete the circuits. Measured circuit characteristics were in reasonable agreement with simulations based on the simple device model. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesDodabalapur, A. ; Bao, Z. ; Makhija, A. ; Laquindanum, J. G. ; Raju, V. R. ; Feng, Y. ; Katz, H. E. ; Rogers, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The fabrication and characteristics of organic smart pixels are described. The smart pixel reported in this letter consists of a single organic thin-film field effect transistor (FET) monolithically integrated with an organic light-emitting diode. The FET active material is a regioregular polythiophene. The maximum optical power emitted by the smart pixel is about 300 nW/cm2 corresponding to a luminance of ∼2300 cd/m2. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLin, Y.-Y. ; Dodabalapur, A. ; Sarpeshkar, R. ; Bao, Z. ; Li, W. ; Baldwin, K. ; Raju, V. R. ; Katz, H. E.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the characteristics of complementary organic ring oscillators. The shortest delay time measured is 38 μs per stage that corresponds to a 2.63 kHz oscillation frequency. The active material in the n-channel transistors is copper hexadecafluorophthalocyanine and that in the p-channel transistors is an oligothiophene/oligothiophene derivative. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesDodabalapur, A. ; Laquindanum, J. ; Katz, H. E. ; Bao, Z.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The operating characteristics of complementary inverters with n-channel napthalenetetracarboxylic dianhydride thin-film transistors (TFTs) and p-channel transistors with hole transporting organic active materials are described. The n-channel TFTs have been used as the load in one circuit configuration and as the driver in the second configuration. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A device structure is reported for the fabrication of nanoscale organic transistors. In this structure, a self-assembled monolayer is used to define the channel length, as well as acting as the semiconducting material. High current modulation and high current output are demonstrated with 4,4′-dithiolbiphenylene. Various dielectric materials, such as SiO2, Al2O3, and a self-assembled silane monolayer, have been shown to result in high-performance transistors. Finally, nanopatterning can also be achieved by using an insulating alkanethiol to define the channel length of a conventional organic field-effect transistor. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesCrone, B. ; Dodabalapur, A. ; Gelperin, A. ; Torsi, L. ; Katz, H. E. ; Lovinger, A. J. ; Bao, Z.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We show that organic thin-film transistors have suitable properties for use in gas sensors. Such sensors possess sensitivity and reproducibility in recognizing a range of gaseous analytes. A wealth of opportunities for chemical recognition arise from the variety of mechanisms associated with different semiconductor–analyte interactions, the ability to vary the chemical constitution of the semiconductor end/side groups, and also the nature of the thin-film morphology. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesSun, Liling ; Wang, W. K. ; He, D. W. ; Wang, W. H. ; Wu, Q. ; Zhang, X. Y. ; Bao, Z. X.
Woodbury, NY : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A reversible phase transition between amorphous and crystalline in bulk metallic glass (BMG) Zr41.2Ti13.8Cu12.5Ni10Be22.5 has been investigated under high pressure at room temperature. The BMG displayed a structure memory under high pressure as detected by in situ synchrotron radiation of x-ray diffraction and resistance measurement in a diamond anvil cell. Direct experimental observations found that the crystallization of the BMG occurred at 24 GPa on uploading and the crystalline phase reverted back to the amorphous state during downloading. This unusual phenomenon was discussed thermodynamically. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesSun, L. L. ; Wang, W. K. ; He, D. W. ; Wang, W. H. ; Wu, Q. ; Zhang, X. Y. ; Bao, Z. X. ; Zhang, J.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesZhu, J. S. ; Qin, H. X. ; Bao, Z. H. ; Wang, Y. N.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Good ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Field-effect transistors based on self-assembled monolayers of molecular, organic insulator/semiconductor heterostructures are demonstrated. The alkyl chains of the molecule act as the gate insulator and the π-electron moieties as the active semiconductor of the device. Mobilities up 0.05 cm2/V s and on/off ratios exceeding 105 are achieved. In addition, using self-assembled monolayers for patterning transistors with channel lengths as short as 2 nm are demonstrated. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 0006-291XKeywords: [abr] 5-MC; 5-methylchrysene ; [abr] CD; circular dichroism ; [abr] CSP; chiral stationary phase ; [abr] HPLC; high-performance liquid chromatography ; [abr] ee; enantiomeric excessSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyPhysicsType of Medium: Electronic ResourceURL: