Search Results - (Author, Cooperation:Y. Zhuang)
-
1Latest Papers from Table of Contents or Articles in PressJ. Shi ; Y. Zhao ; K. Wang ; X. Shi ; Y. Wang ; H. Huang ; Y. Zhuang ; T. Cai ; F. Wang ; F. Shao
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-09-17Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-01-31Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
3Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressS. Lin ; S. Cheng ; B. Song ; X. Zhong ; X. Lin ; W. Li ; L. Li ; Y. Zhang ; H. Zhang ; Z. Ji ; M. Cai ; Y. Zhuang ; X. Shi ; L. Lin ; L. Wang ; Z. Wang ; X. Liu ; S. Yu ; P. Zeng ; H. Hao ; Q. Zou ; C. Chen ; Y. Li ; Y. Wang ; C. Xu ; S. Meng ; X. Xu ; J. Wang ; H. Yang ; D. A. Campbell ; N. R. Sturm ; S. Dagenais-Bellefeuille ; D. Morse
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-11-07Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Anthozoa/*physiology ; Biological Evolution ; *Coral Reefs ; Dinoflagellida/*genetics ; *Gene Expression Regulation ; Gene Targeting ; *Genome, Protozoan ; MicroRNAs/genetics ; Symbiosis/*geneticsPublished by: -
5Latest Papers from Table of Contents or Articles in PressShinde, P. V., Xu, H. C., Maney, S. K., Kloetgen, A., Namineni, S., Zhuang, Y., Honke, N., Shaabani, N., Bellora, N., Doerrenberg, M., Trilling, M., Pozdeev, V. I., van Rooijen, N., Scheu, S., Pfeffer, K., Crocker, P. R., Tanaka, M., Duggimpudi, S., Knolle, P., Heikenwalder, M., Ruland, J., Mak, T. W., Brenner, D., Pandyra, A. A., Hoell, J. I., Borkhardt, A., Häussinger, D., Lang, K. S., Lang, P. A.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-01-18Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
6Latest Papers from Table of Contents or Articles in PressZhang, B., Jiao, A., Dai, M., Wiest, D. L., Zhuang, Y.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-08-21Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
7Latest Papers from Table of Contents or Articles in PressSandrock, I., Reinhardt, A., Ravens, S., Binz, C., Wilharm, A., Martins, J., Oberdörfer, L., Tan, L., Lienenklaus, S., Zhang, B., Naumann, R., Zhuang, Y., Krueger, A., Förster, R., Prinz, I.
Rockefeller University Press
Published 2018Staff ViewPublication Date: 2018-12-04Publisher: Rockefeller University PressPrint ISSN: 0022-1007Electronic ISSN: 1540-9538Topics: MedicinePublished by: -
8Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The glass transition behavior and crystallization kinetics of Zr48Nb8Cu14Ni12Be18 bulk metallic glass have been investigated by differential scanning calorimetry and x-ray powder diffraction (XRD). The activation energies of both glass transition and crystallization events have been obtained using the Kissinger method. Results indicate that this glass crystallizes by a three-stage reaction: (1) phase separation and primary crystallization of glass, (2) formation of intermetallic compounds, and (3) decomposition of intermetallic compounds and crystallization of residual amorphous phase. The pressure effect on crystallization is studied by in situ high-pressure and high-temperature XRD using synchrotron radiation. Two crystallization temperatures, observed by in-situ XRD, behave differently with varying pressure. The onset crystallization temperature increases with pressure with a slope of 9.5 K/GPa in the range of 0 to 4.4 GPa, while the another crystallization temperature keeps almost unchanged in the applied pressure range. The results are attributed to the competing processes between the thermodynamic potential barrier and the diffusion activation energy under pressure. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesWang, Wei Hua ; Wang, R. J. ; Li, F. Y. ; Pan, M. X. ; Qin, Z. C. ; Zhao, D. Q. ; Zhuang, Y. X. ; Zhang, Y.
[S.l.] : American Institute of Physics (AIP)
Published 2000Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The pressure dependence of ultrasonic attenuation in Zr41Ti14Cu12.5Ni10−xBe22.5Cx (x=0,1) bulk metallic glasses has been studied up to 0.5 GPa by using a pulse echo overlap method. The effect of carbon addition on the attenuation is also investigated. Some unique characteristics of the ultrasonic attenuation are found and compared with those of other glasses. The origin of the anomalous attenuation behavior is discussed. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesCui, S. F. ; Li, J. H. ; Li, M. ; Li, C. R. ; Gu, Y. S. ; Mai, Z. H. ; Wang, Y. T. ; Zhuang, Y.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The surface roughness of polished InP (001) wafers were examined by x-ray reflectivity and crystal truncation rod (CTR) measurements. The root-mean-square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesChen, T. R. ; Zhuang, Y. H. ; Eng, L. E. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The lasing wavelength of a strained-layer InGaAs/GaAs single quantum well laser has been found to depend strongly on the cavity length. The relationship between the lasing wavelength and the cavity length was established experimentally and a cavity length tuning mechanism for a quantum well laser is thus made possible.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesHigh-power operation of buried-heterostructure strained-layer InGaAs/GaAs single quantum well lasersChen, T. R. ; Eng, L. E. ; Zhuang, Y. H. ; Xu, Y. J. ; Zaren, H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Very high power levels (330 mW) were obtained from single waveguide, single quantum well InGaAs/GaAs lasers. The lasers are shown to possess superior current threshold, temperature and optical damage characteristics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesChen, T. R. ; Eng, L. ; Zhuang, Y. H. ; Yariv, A. ; Kwong, N. S. ; Chen, P. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Superluminescent diodes (SLDs) employing single and multiple quantum wells were investigated. The diode structure includes a monolithic window and a gain and absorber section. Spectral widths 2–3 times that of conventional SLDs were demonstrated.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesDerry, P. L. ; Chen, T. R. ; Zhuang, Y. H. ; Paslaski, J. ; Mittelstein, M. ; Vahala, K. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (〉3×) in the linewidth of these SQW lasers when the facet reflectivities are enhanced. This observation is explained theoretically on the basis of the very low losses in coated SQW lasers and the value of the spontaneous emission factor at low threshold currents. We also report on the modulation frequency response parameter of these SQW lasers.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesChen, T. R. ; Zhuang, Y. H. ; Xu, Y. J. ; Yariv, A. ; Kwong, N. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: An InGaAsP/InP superluminescent diode (SLD) emitting at 1.54 μm has been fabricated. The device uses a buried crescent structure on a p-InP substrate. The parameters were optimized for high output power, small spectral modulation, and smooth far-field operation. The coherence function of the SLD emission was studied systematically. An output power of 5 mW, a coherence length of 41 μm, and a second coherence peak suppression ratio of 22 dB were obtained.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesChen, T. R. ; Eng, L. E. ; Zhuang, Y. H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: An experimental method for determining the transparency current density of semiconductor quantum well lasers is demonstrated in a strained-layer InGaAs/GaAs single quantum well laser system. The experimental results are then used as a practical guide to the study of ultralow threshold lasers. A threshold current as low as 0.75 mA is observed.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesEng, L. E. ; Chen, T. R. ; Sanders, S. ; Zhuang, Y. H. ; Zhao, B. ; Yariv, A. ; Morkoç, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540-μm-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-μm-wide stripe and 425-μm-long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 μm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesChen, T. R. ; Mehuys, D. ; Zhuang, Y. H. ; Mittelstein, M. ; Wang, H. ; Derry, P. L. ; Kajanto, M. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A tandem combination of a uniform gain broad-area semiconductor laser and a (lateral) periodic gain section displays a stable, near-diffraction-limited single-lobed far-field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60-μm-wide apertures provided that the broad-area section is sufficiently long.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesIannelli, J. M. ; Schrans, T. ; Chen, T. R. ; Zhuang, Y. H. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The effects of nonuniform current injection on the linewidth enhancement factor (α) and the adiabatic chirp in a multielectrode distributed feedback laser are measured through a FM/AM modulation technique. This technique measures the adiabatic chirp due solely to carrier density effects and excludes the contributions of current induced temperature changes. The effects are shown to be a function of the pumping ratio between two active sections in the laser. The adiabatic chirp is enhanced by as much as a factor of 3 and the α parameter is reduced from a value of approximately 4 to 2.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesZhao, B. ; Chen, T. R. ; Wu, S. ; Zhuang, Y. H. ; Yamada, Y. ; Yariv, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The wavelength dependence of the linewidth enhancement factor (amplitude-phase coupling factor) α in quantum well lasers of different quantum well barrier heights have been determined from the spontaneous emission spectra and the Fabry–Perot mode wavelength shifts. It is found that the α parameter at lasing wavelength in GaAs/Al0.15Ga0.85As lasers is about twice as large as that in GaAs/Al0.30Ga0.70As lasers. The observation is consistent with the previously observed spectral linewidth behavior in these lasers, which were attributed to the different state filling effects.Type of Medium: Electronic ResourceURL: