Search Results - (Author, Cooperation:Y. Taur)
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1Latest Papers from Table of Contents or Articles in PressC. G. Buffie ; V. Bucci ; R. R. Stein ; P. T. McKenney ; L. Ling ; A. Gobourne ; D. No ; H. Liu ; M. Kinnebrew ; A. Viale ; E. Littmann ; M. R. van den Brink ; R. R. Jenq ; Y. Taur ; C. Sander ; J. R. Cross ; N. C. Toussaint ; J. B. Xavier ; E. G. Pamer
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-10-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Anti-Bacterial Agents/pharmacology ; Bile Acids and Salts/*metabolism ; Biological Evolution ; Clostridium/metabolism ; Clostridium difficile/drug effects/*physiology ; Colitis/metabolism/microbiology/prevention & control/therapy ; Disease Susceptibility/*microbiology ; Feces/microbiology ; Female ; Humans ; Intestines/drug effects/*metabolism/*microbiology ; Metagenome/genetics ; Mice ; Mice, Inbred C57BL ; Microbiota/drug effects/genetics/*physiology ; SymbiosisPublished by: -
2Latest Papers from Table of Contents or Articles in PressHaak, B. W., Littmann, E. R., Chaubard, J.-L., Pickard, A. J., Fontana, E., Adhi, F., Gyaltshen, Y., Ling, L., Morjaria, S. M., Peled, J. U., van den Brink, M. R., Geyer, A. I., Cross, J. R., Pamer, E. G., Taur, Y.
American Society of Hematology (ASH)
Published 2018Staff ViewPublication Date: 2018-06-29Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: TransplantationPublished by: -
3Articles: DFG German National LicensesBuchanan, D. A. ; DiMaria, D. J. ; Chang, C-A. ; Taur, Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The generation of defects in thin 3.5 nm SiO2 films has been measured as a function of the average electron energy and total injected fluence. It is found that the generation of defects during electron injection for both positive and negative bias manifests itself as positive charge as measured from the increase in the current for a given bias. Positive charge generation is seen for electrons injected into the silicon dioxide conduction band, with the generation rate increasing with increasing electron energy. Electrons that traverse the oxide film via direct quantum-mechanical tunneling do not generate measurable defects. These results are consistent with previously published results on thicker films where the defects were attributed to positive charge found near the anode. © 1994 American Institue of Physics.Type of Medium: Electronic ResourceURL: -
4Articles: DFG German National LicensesStaff View
ISSN: 0038-1101Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsType of Medium: Electronic ResourceURL: -
5Articles: DFG German National LicensesStaff View
ISSN: 0038-1101Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Electrical Engineering, Measurement and Control TechnologyPhysicsType of Medium: Electronic ResourceURL: