Search Results - (Author, Cooperation:Y. Tao)
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1Latest Papers from Table of Contents or Articles in PressYuan, W., Zhou, Y., Fan, Y., Tao, Y. J., Zhong, W.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-06-30Publisher: The American Society for Microbiology (ASM)Print ISSN: 0022-538XElectronic ISSN: 1098-5514Topics: MedicinePublished by: -
2Latest Papers from Table of Contents or Articles in PressCai, W., Mu, R., Zha, S., Sun, G., Chen, S., Zhao, Z.-J., Li, H., Tian, H., Tang, Y., Tao, F., Zeng, L., Gong, J.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-08-11Publisher: American Association for the Advancement of Science (AAAS)Electronic ISSN: 2375-2548Topics: Natural Sciences in GeneralPublished by: -
3Latest Papers from Table of Contents or Articles in PressY. Xu ; Y. Tao ; L. S. Cheung ; C. Fan ; L. Q. Chen ; S. Xu ; K. Perry ; W. B. Frommer ; L. Feng
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-09-05Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Arabidopsis/chemistry ; Bacterial Proteins/*chemistry/metabolism ; Crystallography, X-Ray ; Evolution, Molecular ; Glucose/metabolism ; Leptospira/*chemistry/genetics ; Models, Molecular ; Monosaccharide Transport Proteins/*chemistry/genetics/metabolism ; Movement ; Protein Conformation ; Protein Multimerization ; Structure-Activity Relationship ; Vibrio/*chemistryPublished by: -
4Latest Papers from Table of Contents or Articles in PressY. Tao ; L. S. Cheung ; S. Li ; J. S. Eom ; L. Q. Chen ; Y. Xu ; K. Perry ; W. B. Frommer ; L. Feng
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-10-20Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Arabidopsis/chemistry ; Arabidopsis Proteins/chemistry/genetics/metabolism ; Biological Transport ; Crystallography, X-Ray ; Glucose Transport Proteins, Facilitative/*chemistry/genetics/metabolism ; HEK293 Cells ; Humans ; Models, Molecular ; Monosaccharide Transport Proteins/chemistry/genetics/metabolism ; Oryza/*chemistry/genetics ; Phloem ; Plant Proteins/*chemistry/metabolism ; *Protein Multimerization ; Protein Structure, Quaternary ; Protein Structure, Secondary ; Structure-Activity RelationshipPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-05-05Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2011-08-05Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Agriculture/*statistics & numerical data/trends ; China ; Edible Grain/*growth & development ; Fertilizers/*utilization ; Food Supply/*statistics & numerical data ; *Internationality ; PotassiumPublished by: -
7Latest Papers from Table of Contents or Articles in PressM. J. Ellis ; L. Ding ; D. Shen ; J. Luo ; V. J. Suman ; J. W. Wallis ; B. A. Van Tine ; J. Hoog ; R. J. Goiffon ; T. C. Goldstein ; S. Ng ; L. Lin ; R. Crowder ; J. Snider ; K. Ballman ; J. Weber ; K. Chen ; D. C. Koboldt ; C. Kandoth ; W. S. Schierding ; J. F. McMichael ; C. A. Miller ; C. Lu ; C. C. Harris ; M. D. McLellan ; M. C. Wendl ; K. DeSchryver ; D. C. Allred ; L. Esserman ; G. Unzeitig ; J. Margenthaler ; G. V. Babiera ; P. K. Marcom ; J. M. Guenther ; M. Leitch ; K. Hunt ; J. Olson ; Y. Tao ; C. A. Maher ; L. L. Fulton ; R. S. Fulton ; M. Harrison ; B. Oberkfell ; F. Du ; R. Demeter ; T. L. Vickery ; A. Elhammali ; H. Piwnica-Worms ; S. McDonald ; M. Watson ; D. J. Dooling ; D. Ota ; L. W. Chang ; R. Bose ; T. J. Ley ; D. Piwnica-Worms ; J. M. Stuart ; R. K. Wilson ; E. R. Mardis
Nature Publishing Group (NPG)
Published 2012Staff ViewPublication Date: 2012-06-23Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Androstadienes/pharmacology/therapeutic use ; Antineoplastic Agents/pharmacology/therapeutic use ; Aromatase/*metabolism ; Aromatase Inhibitors/*therapeutic use ; Breast Neoplasms/*drug therapy/*genetics/metabolism/pathology ; DNA Repair ; Exome/genetics ; Exons/genetics ; Female ; Genetic Variation/genetics ; Genome, Human/*genetics ; Humans ; MAP Kinase Kinase 4/genetics ; MAP Kinase Kinase Kinase 1/genetics ; Mutation/genetics ; Nitriles/pharmacology/therapeutic use ; Receptors, Estrogen/metabolism ; Treatment Outcome ; Triazoles/pharmacology/therapeutic usePublished by: -
8Latest Papers from Table of Contents or Articles in PressJ. Jia ; S. Zhao ; X. Kong ; Y. Li ; G. Zhao ; W. He ; R. Appels ; M. Pfeifer ; Y. Tao ; X. Zhang ; R. Jing ; C. Zhang ; Y. Ma ; L. Gao ; C. Gao ; M. Spannagl ; K. F. Mayer ; D. Li ; S. Pan ; F. Zheng ; Q. Hu ; X. Xia ; J. Li ; Q. Liang ; J. Chen ; T. Wicker ; C. Gou ; H. Kuang ; G. He ; Y. Luo ; B. Keller ; Q. Xia ; P. Lu ; J. Wang ; H. Zou ; R. Zhang ; J. Xu ; J. Gao ; C. Middleton ; Z. Quan ; G. Liu ; H. Yang ; X. Liu ; Z. He ; L. Mao
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-03-29Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Adaptation, Physiological/*genetics ; Brachypodium/genetics ; Chromosome Mapping ; Chromosomes, Plant/genetics ; DNA Transposable Elements/genetics ; Disease Resistance/genetics ; Genes, Plant/genetics ; Genome, Plant/*genetics ; Hordeum/genetics ; Molecular Sequence Data ; Plant Diseases ; Poaceae/*genetics ; Polyploidy ; Sequence Analysis, RNA ; Transcription Factors/genetics ; Triticum/*genetics/physiologyPublished by: -
9Latest Papers from Table of Contents or Articles in PressH. Q. Ling ; S. Zhao ; D. Liu ; J. Wang ; H. Sun ; C. Zhang ; H. Fan ; D. Li ; L. Dong ; Y. Tao ; C. Gao ; H. Wu ; Y. Li ; Y. Cui ; X. Guo ; S. Zheng ; B. Wang ; K. Yu ; Q. Liang ; W. Yang ; X. Lou ; J. Chen ; M. Feng ; J. Jian ; X. Zhang ; G. Luo ; Y. Jiang ; J. Liu ; Z. Wang ; Y. Sha ; B. Zhang ; D. Tang ; Q. Shen ; P. Xue ; S. Zou ; X. Wang ; X. Liu ; F. Wang ; Y. Yang ; X. An ; Z. Dong ; K. Zhang ; M. C. Luo ; J. Dvorak ; Y. Tong ; H. Yang ; Z. Li ; D. Wang ; A. Zhang
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-03-29Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Base Sequence ; Brachypodium/genetics ; Crops, Agricultural/classification/genetics ; Diploidy ; Genetic Markers/genetics ; Genome, Plant/*genetics ; Molecular Sequence Data ; Oryza/genetics ; Phylogeny ; Sorghum/genetics ; Synteny/genetics ; Triticum/classification/*genetics ; Zea mays/geneticsPublished by: -
10Articles: DFG German National LicensesTao, Y.-Q. ; Conn, R. W. ; Schmitz, L. ; Tynan, G.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7674Source: AIP Digital ArchiveTopics: PhysicsNotes: It has been shown in an earlier paper [Phys. Fluids B 5, 344 (1993)] that the ion flow speed of a plasma can be much smaller than the E×B speed in a strongly double-sheared electric field. In this paper, the stability of the plasma is investigated. It is found that a new instability, driven by the difference between the ion and electron flow speed, occurs and may dominate the Kelvin–Helmholtz (KH) instability in a nonuniform plasma. This new instability has a driving mechanism similar to that of the Simon–Hoh instability and is thus called the collisionless Simon–Hoh (CSH) instability. When the CSH instability dominates, the plasma does not become more unstable as the electric field is increased, in contrast to scenarios where the KH instability is dominant.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesLandheer, D. ; Tao, Y. ; Xu, D.-X. ; Sproule, G. I. ; Buchanan, D. A.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: High quality silicon dioxide films have been produced using a direct plasma-enhanced chemical vapour deposition process with silane, nitrous oxide and helium that leaves a nitrided layer at the Si-SiO2 interface. X-ray photoelectron spectroscopy coupled with etch-back of the films has shown that the interface nitrogen is incorporated by nitridation of the silicon surface. Fowler–Nordheim injection measurements on thin films annealed after deposition for 1 minute at 950 °C show that the neutral-trap generation and interface state generation rates are comparable to that of thermal oxide if a proper deposition power is chosen. The data is consistent with an interpretation in which fast donor states, not Pb centres, account for almost all of the increase in the charge trapped at the interface. Too high deposition powers lead to excessive nitrogen and higher interface state generation rates. It is proposed that improved performance under hot-electron stress could be obtained by using an optimal deposition power to obtain an optimal nitrogen concentration followed by annealing in oxygen. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLandheer, D. ; Xu, D.-X. ; Tao, Y. ; Sproule, G. I.
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effect of power on the electrical and interface properties of silicon dioxide films produced by direct plasma-enhanced chemical-vapor deposition, using nitrous oxide and silane with high helium dilution, has been investigated. Auger depth profiling measurements indicate that while the bulk of the films have no measurable impurities, the interface region contains about 1.6×1015 atoms/cm2 of nitrogen. In contrast to thermal oxides, there is no thick interface layer with a large intrinsic compressive stress. The interface-state densities of the films obtained from capacitance-voltage measurements on metal-oxide-semiconductor diodes increase with increasing plasma power, but these can be removed to some extent by high-temperature annealing at temperatures in the range 800–950 °C. The flatband voltage is relatively insensitive to plasma power. Thermal oxide samples have been subjected to the plasma processes and these also show evidence of plasma damage. A thin layer produced at the interface by a separate plasma oxynitridation process is shown to be incapable of protecting the Si/SiO2 interface from the plasma damage produced by subsequent high-power plasma deposition processes. The nature of the interface states is discussed.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesRao, Mulpuri V. ; Keshavarz-Nia, N. R. ; Simons, David S. ; Amirtharaj, P. M. ; Thompson, Phillip E. ; Chang, Tao Y. ; Kuo, Jenn Ming
[S.l.] : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Single and multiple energy Fe+ implants are performed in n-type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesZhao, Y. J. ; Chu, W. K. ; Liu, J. R. ; Kulik, J. ; Zandbergen, H. ; Tao, Y. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: High resolution transmission electron microscopy (HREM) reveals that MeV heavy ions like Au generate radiation damage defects, a few nanometers in size, in surface regions (about 100 A(ring)) of the superconductors. Much larger defects have been found in the deeper regions of the superconductor sample, which is believed to be due to the larger damage cascade created by the slower ions after their electronic energy loss along the track. Monte Carlo simulation (trim) shows the same result in damage size as the HREM study. Light ions, like protons, generate mostly point defects, which are not visible to current electron microscopy. These point defects, although they can pin the flux, are not ideal for flux pinning, due to their small sizes.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesZhang, Z. H. ; Chow, L. ; Paschke, K. ; Yu, N. ; Tao, Y. K. ; Matsuishi, K. ; Meng, R. L. ; Hor, P. ; Chu, W. K.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: 1 MeV carbon ions were implanted into single-crystal copper which was then annealed in argon at temperatures ranging from 350 to 750 °C. Regrowth of the radiation-damaged copper was examined by RBS-channeling measurements. Carbon segregation occurred on annealing at 750 °C. Prolonged annealing at 750 °C caused blistering of the copper layer over the buried carbon. After removal of the blistered copper overlayer, the previously buried carbon layer was examined by Raman scattering, showing that graphite is the dominant phase.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesTao, Y. ; Yelon, A. ; Sacher, E. ; Lu, Z. H. ; Graham, M. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A highly stable crystalline S-passivated InP(100) surface has been obtained by a simple wet chemical process, using illumination and heated (NH4)2S solution. Low-energy electron diffraction studies show a (1×1) diffraction pattern, which persists even after 3 days of exposure to the atmosphere. High-resolution photoemission studies show that the surface is terminated with a monolayer of sulfur, which forms bridge bonds only to indium. The P 2p core level is identical to that of a vacuum-cleaved InP surface. A possible structural model is presented.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Very bright blue organic light emitting diodes were fabricated using highly fluorescent dipyrazolopyridine derivatives, 4-(4-substituted phenyl)-1,7-diphenyl-3,5-dimethyl-1,7dihydrodipyrazolo[3,4-b,4′,3′-e]pyridine (PAP–X, X(Double Bond)CN, Ph, and OMe), as emitter by doping the dye in an electron-transporting host, 2,2′,2″-(1,3,5-benzenetriyl)tris-[1-phenyl-1H-benzimidazole] (TPBI). Two hole-transporting layers, 4,4′-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl (NPB) and 4,4′-dicarbazolyl-1,1′-biphenyl (CBP) were used to achieve the emission from PAP–X. The devices with a general configuration of indium tin oxide/NPB/CBP/TPBI:PAP(2%)/Mg:Ag showed a bright blue emission. The PAP–CN-based device is exceptionally good, with a brightness of 11 200 cd/m2 at 14.2 V and the peak external quantum efficiency of 3.2%. The efficiency is the highest for the blue emission. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesWu, Z. Y. ; Zhang, J. ; Ibrahim, K. ; Xian, D. C. ; Li, G. ; Tao, Y. ; Hu, T. D.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: To understand and improve the applications of titanium-oxide nanoparticles, it is extremely important to perform a detailed investigation of the surface and the interior structural properties of nanocrystalline materials, such as rutile and anatase with diameter of few nanometers. Here, x-ray absorption spectroscopy has been used to identify the local Ti environment and characterize the related electronic structure. We combine experimental results at the Ti K edge in both bulk and nanocrystal samples to determine the lattice distortion via the characteristic pre-edge features and the variation in the multiple-scattering region of the x-ray absorption near-edge structure spectra. The correlation between peak intensities and surface-to-volume ratio of nanoparticles is also discussed. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A very bright white organic light-emitting diode (OLED) was realized by using a bright blue-emitting layer, 1,7-diphenyl-4-biphenyl-3,5-dimethyl-1,7-dihydrodipyrazolo[3,4-b;4′,3′-e]pyridine (PAP-Ph), together with a 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyry)-4H-pyran (DCM)-doped Alq [tris(8-hydroxyquinolinato) aluminum (III)] layer to provide blue, red, and green emission for color mixing. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 24 700 cd/m2 at 15 V, 1.93 lm/W at 6.5 V, and 〉300 cd/m2 at 7.7 mA/cm2. The Commission Internationale de l'Eclairage coordinates of the emitted light are quite stable at voltages from 6 to 12 V, ranging from (0.35, 0.34) to (0.34, 0.35). © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ–NEt2) doped into the hole-transporting layer of NPB {4,4′-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2′,2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ–NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: