Search Results - (Author, Cooperation:Y. Takeda)

2018-01-19

American Physical Society (APS)

1098-0121

1095-3795

Physics

Electronic structure and strongly correlated systems

2018-11-16

American Society of Hematology (ASH)

0006-4971

1528-0020

Biology

Medicine

Phagocytes, Granulocytes, and Myelopoiesis, Brief Reports, Clinical Trials and Observations

2011-10-11

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

Alleles ; Animals ; Arteries/*growth & development ; Disease Models, Animal ; Extremities/*blood supply/pathology ; Female ; Heterozygote ; Homeostasis ; Hypoxia-Inducible Factor-Proline Dioxygenases ; Ischemia/pathology/*prevention & control ; Macrophages/*metabolism ; Male ; Mice ; Mice, 129 Strain ; Mice, Inbred BALB C ; Myocytes, Smooth Muscle/cytology ; NF-kappa B/metabolism ; Necrosis ; Phenotype ; Procollagen-Proline Dioxygenase/*deficiency/genetics/*metabolism

0031-9422

Premna japonica ; Verbenaceae ; leaves ; monoacyl rhamnopyranose.

Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Biology

Chemistry and Pharmacology

Electronic Resource

2018-05-23

Institute of Physics Publishing (IOP)

1748-0221

Physics

2018-05-11

American Society of Hematology (ASH)

0006-4971

1528-0020

Biology

Medicine

Multiple Myeloma, Transplantation, Lymphoid Neoplasia

2018-05-22

The American Association of Immunologists (AAI)

0022-1767

1550-6606

Medicine

1089-7550

AIP Digital Archive

Physics

Morphologies of Si surfaces treated with aqueous solutions of hydrofluoric acid (HF) and ammonium fluoride (NH4F) have been investigated using surface infrared spectroscopy. We confirm that HF-treated Si(111) surfaces are terminated with a monohydride (Si—H), dihydride (Si—H2), and trihydride (Si–H3), whereas NH4F-treated Si(111) surfaces are dominantly terminated with Si—H. For Si(100), treatment in NH4F produces a surface for which the dihydride mode is enhanced compared to HF treatment, suggesting that surface Si—Si bonds on Si(100) are readily cleaved in a NH4F solution to generate a dihydride Si. The effect of varying the HF concentration on the morphology of HF-treated Si(100) surfaces is investigated. It is demonstrated that 5% HF treatment produces Si(100) surfaces which have a larger density of surface Si—Si bonds than 50% HF or 0.5% HF treatment.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Extended x-ray absorption fine structure (EXAFS) measurement is the technique to measure nondestructively the nearest-neighbor distance, to the accuracy within 0.01 A(ring) or better, coordination number, and atomic species. Especially, fluorescence-detected EXAFS is best suited to characterize the atomic scale microstructure of epitaxially grown thin layers on a thick substrate. We have investigated the microstructure for each atomic pair of Ga-P, Ga-As, and In-As in (Ga,In)(As,P) alloys lattice-matched with InP, over a wide range of composition from dilute limit, through quaternary, to ternary. Constant atomic distances over the wide range were revealed when the average lattice parameter was kept constant.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The Si(111) surface treated in a saturated solution of NH4F has been investigated using photoemission spectroscopy with synchrotron radiation and surface infrared spectroscopy (SIS) in the multiple internal reflection mode. Photoemission and SIS data clearly demonstrate that the NH4F-treated Si(111) surface is dominantly terminated with the monohydride Si (Si-H) oriented perpendicular to the surface and is free from silicon oxide. It is suggested that the absence of silicon oxide is closely related to the atomic flatness of this surface.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

We have investigated thin (In, Mn)As layer and (In, Mn)As quantum dots (with Mn mole fraction lower than 0.02) on GaAs(001) by fluorescence extended x-ray absorption fine structure (EXAFS) in order to study the local structures formed around the Mn atoms. The EXAFS analysis revealed that in a 10 nm thick (In, Mn)As layer, the In-site substitutional Mn and the NiAs-type MnAs coexisted, while the majority of the Mn atoms were substituted in the In-sites of InAs in (In, Mn)As quantum dots. It is considered that different growth modes for the thin layer and the quantum dots affect the local structures. © 2001 American Institute of Physics.

Electronic Resource

1471-4159

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Abstract: The rat substance P (SP) receptor (SPR) was expressed in insect Sf9 cells by infection with recombinant baculovirus. The receptor bound SP with high affinity (KD = 360 pM) and had a rank order of affinity of SP 〉 neurokinin A 〉 neurokinin B. Ligand activation of the receptor resulted in an increase in both inositol lipid hydrolysis and intracellular Ca2+ concentration ([Ca2+]i). However, high-level expression of the receptor, in the absence of ligand, was correlated with increased basal turnover of inositol lipids and an elevated rate of Ca2+ influx. These results demonstrate that the Sf9 cells provide a suitable environment for the high-level expression of a functionally active SPR. Two carboxy-terminal epitope-tagged receptors (SPR-KT3 = SPR-TPPPEPET, COOH; SPR-Glu = SPR-EEEEYMPME, COOH) were also expressed. The affinity of the KT3-tagged receptor for ligand was similar to that of the wild-type receptor (KD = 405 pM), and that of the Glu-tagged receptor was slightly lower (KD = 1,082 pM). The high-affinity SP binding site of all three receptors was sensitive to guanosine 5′-O-(3-thiotriphosphate) pretreatment. The maximal signal-transducing ability of the epitope-tagged receptors was comparable to that of the wild-type receptor ([Ca2+]i rise as a percentage of wild-type: SPR-KT3, 80–100%; SPR-Glu, 88–100%). These data show that heterologous expression in the baculovirus system results in high expression of functional wild-type and tagged receptors.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The accommodation of lattice mismatching in InPAs layers with thickness from one monolayer to 200 A(ring) grown on InP substrates is measured by extended x-ray-absorption fine structure. Measured critical thicknesses agree with model calculations. In the layers beyond the critical thickness, gradual lattice accommodation with increase of the layer thickness is observed. The lattice accommodation mechanism beyond the critical thickness is discussed by comparison with the calculations. © 1995 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Surface morphology and structural changes of amorphous (a-), crystalline (c-) SiO2 and MgAl2O4 spinel, implanted with high-current Cu− of 60 keV, were studied using atomic force microscopy. Kinetic variation of the surface morphology was evaluated by changing dose rate from 1 to 100 μA/cm2. In the cases of a-SiO2 and c-SiO2, the surface morphology significantly varied with dose rate: dome-type textures in the lower dose-rate region caused radiation-induced roughening, while net-type ones in the higher region occurred with radiation-induced smoothing. Step-height measurements showed radiation-induced expansion and compaction for c-SiO2 and a-SiO2, respectively. Radiation-induced amorphization is responsible for the expansion processes of c-SiO2. Contrarily, no amorphization was observed in the spinel up to dose rates of about 100 μA/cm2, although radiation-induced swelling, due to defect accumulation, was discernible by the step-height measurement. The surface morphology and the roughness of the spinel were not very dependent on dose rate. The results of c-SiO2 and a-SiO2 indicate that both of them are subjected to enhanced changes in surface morphology and microstructures and that high-current implantation causes highly dynamic states in the near-surface region. On the other hand, the results for the spinel show pronounced stability and that the spinel may be used as an effective substrate for optical modification, even for high-current ion implantation. © 2001 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

We have grown Er,O-codoped InGaAs/GaAs multiple-quantum-well (MQW:Er,O) structures by low-pressure organometallic vapor phase epitaxy (OMVPE), and investigated their luminescence properties. The MQW structures are designed to emit light at 0.98 μm for direct excitation of Er ions. Degradation of the structures due to introduction of Er and oxygen is not observed in x-ray diffraction patterns. Er ions doped with oxygen exhibit a sharp and well-ordered photoluminescence spectrum predominantly from one kind of Er center (Er-2O center). Photoluminescence excitation measurements on MQW:Er,O and Er,O-codoped GaAs samples reveal that under below-GaAs-band-gap excitation (830–940 nm), the Er-related luminescence is observed only in the MQW:Er,O sample. It indicates that the luminescence originates from Er ions in InGaAs QWs by means of trap-mediated excitation process. © 2002 American Institute of Physics.

Electronic Resource

1089-7666

AIP Digital Archive

Physics

This experimental study is devoted to visualisation and ultrasonic velocity measurement of the wakes formed behind a row of parallel cylinders placed side by side, perpendicular to an incoming flow at low Reynolds numbers. When the distance separating the cylinders is small compared to their diameter, two instability mechanisms, associated with different patterns and dynamics compete. A first spatial symmetry breaking appears when the stationary wakes behind each cylinder are deviated towards one side or the other and form large clusters containing from two to sometimes more than ten wakes. These clusters are separated by intense recirculating zones. When the Reynolds number is increased, the wakes belonging to the widest clusters experience a secondary temporal oscillatory bifurcation. Classical Bénard-Von Kármán vortex streets are thus shed in phase by these cylinders (acoustic mode), by contrast with the wakes outside these cells which stay stationary. Finally, the flow around far apart cylinders is also investigated. The primary instability does not occur in this case and a perfect optical mode of vortex shedding, with neighbours in phase opposition, takes place in the flow. © 1996 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Growth temperature (TG) dependence of the acceptor concentrations (NA) in Al0.1Ga0.9Sb grown by liquid phase epitaxy in a very wide growth temperature range (250–500 °C) was investigated. It was found that NA varies with TG down to 350 °C as NA ∝exp(Ea/kBTG) with Ea=0.47 eV and that below 350 °C NA fluctuates depending highly on growth conditions. Acceptors in Al0.1Ga0.9Sb grown above 350 °C were concluded to be intrinsic. These observations were successfully made using the improved extremely low-temperature growth process. The evaluation technique of measuring the impurity concentration in a thin epitaxial layer on the conductive GaSb substrate by C-V characteristics of metal-insulator-semiconductor structures was employed.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The interfaces of InP/InPAs(1 monolayer)/InP samples grown by organometallic vapor-phase epitaxy were investigated by the x-ray crystal truncation rod scattering measurement. The distribution of As atoms around the InPAs heterolayer was clearly revealed in the atomic scale from the measurement. It was shown that the distribution of As atoms into the layer under the InPAs layer was very small and that distribution of As atoms in the InP cap layer was, on the other hand, noticeable and the amount of As atoms was almost the same as that contained in the InPAs heterolayer. These results suggest that the extension of As atoms in the InP layer occurs due to the absorbed As atoms on the InPAs surface or As atoms remaining in the gas phase. Thus, to realize the abrupt InP/InPAs interface, the source-gas change sequence should be controlled to be very abrupt. © 1997 American Institute of Physics.

Electronic Resource

1089-7666

AIP Digital Archive

Physics

The spatial evolution of a potential hump (electron hole) into a Buneman double layer was for the first time observed at the instant of current limitation in the initial phase of a high-voltage straight plasma discharge with a preexisting hydrogen plasma. Potential profiles along the axis numerically calculated from the real time E-field data demonstrate the formation of a strong double layer with an inverse potential jump (eφDL/kTe∼103) moving toward the center of the device with a mean velocity 1.2×108 cm/sec, nearly 0.3 times the electron thermal velocity. The strong HV double layer developed near the center then quickly grew up to an extremely strong dynamic double layer propagating toward the anode. The formation of a highly anisotropic velocity distribution of energetic electrons associated with the strong double layer was evidenced by intense hard x-ray emissions that were first detected in the direction almost parallel to the magnetic field with a delay time 250–350 nsec from the generation of the double layer.

Electronic Resource

1600-0714

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

During a histologic investigation of compound odontomas, numerous duct-like structures scattered in odontogenic epithelia were found in 3 of 7 cases. The duct-like lumina were 10 to 150 μm in diameter, and lined with eosinophilic, and relatively regular-arranged epithelial cells which were cuboidal or flat in shape and which had a hyperchromatic nucleus, resulting in some resemblance to the small duct of excretory glands. Amorphous material stained palely with hematoxylin was present within the duct-like lumina, but showed somewhat weaker reaction to mucous stainings. Mucous secreting cells could not be found in any odontogenic epithelia. Although no firm conclusion of histogenesis and pathologic significance of the duct-like structure in odontogenic epithelium, the result of the present examination suggests that the odontogenic epithelial cells may have an ability to form duct-like structure under the unknown condition.

Electronic Resource