Search Results - (Author, Cooperation:Y. Kan)

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  1. 1
    W. Qian ; D. Miki ; H. Zhang ; Y. Liu ; X. Zhang ; K. Tang ; Y. Kan ; H. La ; X. Li ; S. Li ; X. Zhu ; X. Shi ; K. Zhang ; O. Pontes ; X. Chen ; R. Liu ; Z. Gong ; J. K. Zhu
    American Association for the Advancement of Science (AAAS)
    Published 2012
    Staff View
    Publication Date:
    2012-06-16
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Acetylation ; Arabidopsis/*genetics/*metabolism ; Arabidopsis Proteins/chemistry/genetics/*metabolism ; Chromatin/metabolism ; DNA Glycosylases/metabolism ; *DNA Methylation ; DNA, Plant/*metabolism ; Gene Silencing ; Genes, Plant ; Histone Acetyltransferases/chemistry/genetics/*metabolism ; Histones/metabolism ; Methylation ; Mutation ; Nuclear Proteins/genetics/metabolism ; Protein Structure, Tertiary ; Transgenes
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Obata, K. ; Yamanishi, M. ; Yamaoka, Y. ; Kan, Y. ; Hayashi, J. ; Suemune, I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A new type of optical bistable device is demonstrated. We report the first observation of optical bistable switching caused by charge-induced self-feedback due to field screening in GaAs/AlGaAs multiple quantum well structures, both at room temperature and at low temperature (110 K). A bias voltage supply is directly connected to the p-i-n diode with the multiple quantum well structure to attain optical bistability. Since no external series resistance is required, the device is attractive from the standpoint of a practical application. The mechanism for the self-feedback underlying the operation of the device is elaborated. The theoretical consideration about the resolvable spot size on the device operation is shown.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.103653

    Articles: DFG German National Licenses
  3. 3
    Yasuhira, N. ; Suemune, I. ; Kan, Y. ; Yamanishi, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A new type of laser structure which utilizes the selectively doped double-heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH-LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102477

    Articles: DFG German National Licenses
  4. 4
    Suemune, I. ; Kishimoto, A. ; Hamaoka, K. ; Honda, Y. ; Kan, Y. ; Yamanishi, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Hydrogen (H) plasma irradiation effect on (100) GaAs surfaces was studied. The etching of GaAs surfaces was found to be effectively ceased after some etch at the initial stage when the plasma beam was incident on the surface at a shallow glancing angle. The etched surface was an atomically flat (100) GaAs surface as previously observed by clear Laue spots in the reflection high-energy electron diffraction measurement reported by I. Suemune, Y. Kunitsugu, Y. Kan, and M. Yamanishi [Appl. Phys. Lett. 55, 760 (1989)]. A physical model for the newly found relation between the etch rate and the surface structure is discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102926

    Articles: DFG German National Licenses
  5. 5
    Kan, Y. ; Okuda, M. ; Yamanishi, M. ; Ohnishi, T. ; Mukaiyama, K. ; Suemune, I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1990
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The field control of the luminescent characteristics is investigated with three-terminal field-effect light-emitting devices with superlattice buffer layers, showing a high-speed switching (∼0.8 ns) of emission intensity, free from lifetime limitation at room temperature and a high quantum yield of the emission intensity, i.e., an external efficiency ηex≥1%. It is demonstrated that a combination of the field control of radiative lifetime with carrier leakage results in a high-speed modulation of luminescence intensity under a fixed carrier population in the active layer, unchanged with and without electric fields.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.102992

    Articles: DFG German National Licenses
  6. 6
    Suemune, I. ; Kunitsugu, Y. ; Kan, Y. ; Yamanishi, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101798

    Articles: DFG German National Licenses
  7. 7
    Suemune, I. ; Coldren, L. A. ; Yamanishi, M. ; Kan, Y.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Lasing characteristics of strained quantum well (QW) structures such as InGaAs/AlGaAs on GaAs and InGaAs/InAlAs on InP were analyzed by taking into account the band mixing effect in the valence band. A relaxation oscillation frequency fr, which gives a measure of the upper modulation frequency limit, was found increased three times in a 50 A(ring) In0.9Ga0.1As/In0.52Al0.48As QW structure compared with that in a 50 A(ring) GaAs/Al0.4Ga0.6As QW structure for the undoped case. One of the main factors for this improved frequency bandwidth is attributed to the reduced subband nonparabolicity as well as the reduced valence-band density of state in the strained QW structure. The corresponding lasing threshold current is one order of magnitude smaller than that of the GaAs/AlGaAs QW structure. With a p doping in the QW the fr value increases, and the 3 dB cutoff frequency of about 90 GHz will be expected with an acceptor concentration of 5×1018 cm−3 in the In0.9Ga0.1As/In0.52Al0.48As QW.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.99984

    Articles: DFG German National Licenses
  8. 8
    Suemune, I. ; Yamada, K. ; Masato, H. ; Kan, Y. ; Yamanishi, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Photopumped lasing in a ZnS0.12Se0.88/ZnSe multilayer structure up to 180 K is reported for the first time. The films were grown by metalorganic vapor phase epitaxy on (001) GaAs. The purpose of using the multilayer structure is to prevent the diffusion of the photoexcited carriers to have population inversion sufficient for lasing. The possibility of lasing at the higher temperature is briefly discussed.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100755

    Articles: DFG German National Licenses
  9. 9
    Kan, Y. ; Yamanishi, M. ; Okuda, M. ; Mukaiyama, K. ; Ohnishi, T. ; Kawamoto, M. ; Suemune, I.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1989
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The field control of luminescent characteristic is observed with the three-terminal quantum-confined field-effect light-emitting device at a high temperature of 100–300 K. The modulation scheme caused by the field-induced change in radiative lifetime without change in carrrier density is demonstrated in the practical device. A fast switching of the spontaneous emission intensity free from lifetime limitation is obtained.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.101680

    Articles: DFG German National Licenses
  10. 10
    Suemune, I. ; Kunitsugu, Y. ; Tanaka, Y. ; Kan, Y. ; Yamanishi, M.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1988
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A new low-temperature cleaning as well as a growth method using a hydrogen (H) plasma was successfully applied to the growth of GaAs on Si. The H plasma is expected to play several roles, such as cleaning the Si surface just prior to growth, decomposition of the metalorganic sources introduced without thermal cracking for the GaAs growth, supplying H radicals to terminate the organic-alkyl radicals, and enhancement of the mobilities for the surface migration. The almost atomically flat Si clean surface was prepared at a temperature as low as 300 °C using the H plasma. A single-domain GaAs epilayer was successfully realized at 400 °C after growth of 100 nm on a two-domain (001) Si surface using triethylgallium and triethylarsenic introduced without thermal cracking. The films were grown just after surface cleaning with the H plasma in the same chamber. Therefore, the reduction of the temperature for the whole growth process is possible with this new method.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.100273

    Articles: DFG German National Licenses
  11. 11
    Schwartz, E. ; Kan, Y. W. ; Nathan, D. G.

    Oxford, UK : Blackwell Publishing Ltd
    Published 1969
    Staff View
    ISSN:
    1749-6632
    Source:
    Blackwell Publishing Journal Backfiles 1879-2005
    Topics:
    Natural Sciences in General
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1111/j.1749-6632.1969.tb27798.x

    Articles: DFG German National Licenses
  12. 12
    DOZY, A. M. ; KAN, Y. W. ; EMBURY, S. H. ; MENTZER, W. C. ; WANG, W. C. ; LUBIN, B. ; DAVIS, J. R. ; KOENIG, H. M.

    [s.l.] : Nature Publishing Group
    Published 1979
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] The two a-globin structural gene loci are 3.7 kilobases apart15'16. The presence of these two loci could be deduced by digestion with the two restriction enzymes, EcoRl and Hpal. When cellular DNA from a non-thalassaemic individual (genotype: aa/aa) was digested with EcoRl, the two a-globin loci ...
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1038/280605a0

    Articles: DFG German National Licenses
  13. 13
    KAN, Y. W. ; HOLLAND, J. P. ; DOZY, A. M. ; CHARACHE, S. ; KAZAZIAN, H. H.

    [s.l.] : Nature Publishing Group
    Published 1975
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] The annealing of /?- and ycDNA to DNA is shown in Fig. 1. The /?cDNA annealed to 65% with normal DNA, but only to 35% with HPFH DNA. In contrast, ycDNA annealed equally to normal and HPFH DNA (90%). In man, from the mode of inheritance of /?-globin structural abnormalities, there is believed to be ...
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1038/258162a0

    Articles: DFG German National Licenses
  14. 14
    KAN, Y. W. ; DOZY, A. M. ; VARMUS, H. E. ; TAYLOR, J. M. ; HOLLAND, J. P. ; LIE-INJO, L. E. ; GANESAN, J. ; TODD, D.

    [s.l.] : Nature Publishing Group
    Published 1975
    Staff View
    ISSN:
    1476-4687
    Source:
    Nature Archives 1869 - 2009
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Notes:
    [Auszug] Ottolenghi et al. and Taylor et al. showed that the defect in hydrops fetalis results from complete or partial deletions affecting all a-globin stuctural genes5'6. This implies that in a thalassaemia-1 half the normal number of a-globin genes are similarly affected. Since some normal a-globin chain ...
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1038/255255a0

    Articles: DFG German National Licenses
  15. 15
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(89)90358-8

    Articles: DFG German National Licenses
  16. 16
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90760-I

    Articles: DFG German National Licenses
  17. 17
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)91074-Z

    Articles: DFG German National Licenses
  18. 18
    Kanda, T. ; Suemune, I. ; Yamada, K. ; Kan, Y. ; Yamanishi, M.

    Amsterdam : Elsevier
    Staff View
    ISSN:
    0022-0248
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Geosciences
    Physics
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/0022-0248(88)90600-8

    Articles: DFG German National Licenses
  19. 19
    Staff View
    ISSN:
    0040-4020
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Chemistry and Pharmacology
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/S0040-4020(01)90409-0

    Articles: DFG German National Licenses
  20. 20
    Staff View
    ISSN:
    0031-9422
    Keywords:
    2,3-secoaromadendrane ; Hepaticae ; Jungermanniales ; Plagiochila ovalifolia, P. retrospectans ; acetoxyisoplagiochilide ; aromadendrane ; dehydropinguisone ; diterpenoid, chemosystematics. ; ent-4β,10α-dihydroxyaromadendrane ; pinguisane ; plagiochiline N ; sesquiterpenoids
    Source:
    Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics:
    Biology
    Chemistry and Pharmacology
    Type of Medium:
    Electronic Resource
    URL:
    http://linkinghub.elsevier.com/retrieve/pii/S0031-9422(00)89735-6

    Articles: DFG German National Licenses