Search Results - (Author, Cooperation:Y. C. Chang)
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1Latest Papers from Table of Contents or Articles in PressZ. Lu ; Y. C. Chang ; Q. Z. Yin ; C. Y. Ng ; W. M. Jackson
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-10-04Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressAlex C. Y. Chang, Andrew C. H. Chang, Anna Kirillova, Koki Sasagawa, Willis Su, Gerhard Weber, Jue Lin, Vittavat Termglinchan, Ioannis Karakikes, Timon Seeger, Alexandra M. Dainis, John T. Hinson, Jonathan Seidman, Christine E. Seidman, John W. Day, Euan Ashley, Joseph C. Wu, Helen M. Blau
National Academy of Sciences
Published 2018Staff ViewPublication Date: 2018-09-12Publisher: National Academy of SciencesPrint ISSN: 0027-8424Electronic ISSN: 1091-6490Topics: BiologyMedicineNatural Sciences in GeneralPublished by: -
3Latest Papers from Table of Contents or Articles in PressMichael R. Blaisse, Beverly Fu and Michelle C. Y. Chang
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-02-01Publisher: American Chemical Society (ACS)Print ISSN: 0006-2960Electronic ISSN: 1520-4995Topics: BiologyChemistry and PharmacologyPublished by: -
4Latest Papers from Table of Contents or Articles in PressHsu, C.-Y., Chang, G.-C., Chen, Y.-J., Hsu, Y.-C., Hsiao, Y.-J., Su, K.-Y., Chen, H.-Y., Lin, C.-Y., Chen, J.-S., Chen, Y.-J., Hong, Q.-S., Ku, W.-H., Wu, C.-Y., Ho, B.-C., Chiang, C.-C., Yang, P.-C., Yu, S.-L.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-02-16Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressAmy M. Weeks, Ningkun Wang, Jeffrey G. Pelton, Michelle C. Y. Chang
National Academy of Sciences
Published 2018Staff ViewPublication Date: 2018-03-07Publisher: National Academy of SciencesPrint ISSN: 0027-8424Electronic ISSN: 1091-6490Topics: BiologyMedicineNatural Sciences in GeneralPublished by: -
6Latest Papers from Table of Contents or Articles in PressMichael J. Wishon, Alexandre Locquet, C. Y. Chang, D. Choi, and D. S. Citrin
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-03-29Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Quantum optics, physics of lasers, nonlinear optics, classical opticsPublished by: -
7Latest Papers from Table of Contents or Articles in PressJ. Kim ; X. Hong ; C. Jin ; S. F. Shi ; C. Y. Chang ; M. H. Chiu ; L. J. Li ; F. Wang
American Association for the Advancement of Science (AAAS)
Published 2014Staff ViewPublication Date: 2014-12-06Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
8Latest Papers from Table of Contents or Articles in PressC. Y. Chang ; H. A. Pasolli ; E. G. Giannopoulou ; G. Guasch ; R. M. Gronostajski ; O. Elemento ; E. Fuchs
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-02-08Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Apoptosis ; Cell Differentiation ; Cell Proliferation ; Chromatin Immunoprecipitation ; Endothelin-2/genetics/metabolism ; Epithelial Cells/cytology/metabolism ; Hair/cytology/growth & development ; Hair Color ; Hair Follicle/*cytology/metabolism ; Melanocytes/*cytology/metabolism ; Mice ; NFI Transcription Factors/deficiency/genetics/*metabolism ; Sequence Analysis ; Stem Cell Factor/metabolism ; *Stem Cell Niche ; Stem Cells/*cytology/*metabolismPublished by: -
9Articles: DFG German National LicensesStaff View
ISSN: 1365-2842Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: SUMMARY Sugar and agar balls containing barium were made for the fluoroscopic observation of the bolus position during habitual side chewing in 13 adult males (aged from 20 to 28 years) who had a complete dentition and healthy masticatory system. The test foods had constant size, shape, weight and known hardness, i.e. type 1, 20 kg; type 2, 40 kg; type 3, 1.0 kg and type 4, 0.5 kg. These four types of test foods were chewed randomly in a fluoroscopic room. The jaw separation distance and the bolus position during first bite and crushing bite were observed. The influence of the chewing order of four types of test foods on the bolus position was also recorded. It was found that both hard and soft test foods were most often crushed at the first molar area, and the separation distance during the crushing bite was only slightly wider than the diameter of the food. The first bite jaw separation distance for hard food chewing was significantly wider than soft food chewing and the later in the chewing order the wider the separation distance. The effect of chewing order was not significant on the position and jaw separation distance of the crushing bite.Type of Medium: Electronic ResourceURL: -
10Latest Papers from Table of Contents or Articles in PressChang, M., Sionov, E., Khanal Lamichhane, A., Kwon-Chung, K. J., Chang, Y. C.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-03-28Publisher: The American Society for Microbiology (ASM)Print ISSN: 0066-4804Electronic ISSN: 1098-6596Topics: BiologyMedicinePublished by: -
11Articles: DFG German National LicensesXie, H. ; Katz, J. ; Wang, W. I. ; Chang, Y. C.
[S.l.] : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Absorption of infrared radiation at normal incidence from intervalence-subband transitions is investigated in p-type GaSb/Ga1−xAlxSb quantum wells. Normal incidence absorption is allowed in conventional p-type quantum wells due to the favorable properties of the p-like valence-band Bloch states and the heavy- and light-hole mixing. By using GaSb as the quantum-well material, which has the smallest heavy-hole effective mass of the commonly used III-V semiconductors, absorption can be further enhanced. We find that normal incidence absorption of 3000–6000 cm−1 can be easily achieved in these proposed quantum wells with well widths of 55–90 A(ring) for the wavelength range of 8–12 μm and typical sheet doping concentrations of 1012 cm−2. This absorption strength is comparable to that in the intrinsic Hg1−xCdxTe detector. Strong absorption of normally incident radiation makes this structure a good candidate for infrared photodetection.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesLo, Ikai ; Chang, Y. C. ; Weng, H. M. ; Chiang, J.-C.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The two-dimensional electron gas in δ-doped double quantum wells has been studied by using the Shubnikov–de Haas measurement. It was discovered that the δ-doping layer at the central barrier is able to prevent the electron coupling in the two wells and that the persistent photoconductivity can be reduced due to the thinner barrier. A δ-doped multiple quantum well structure for photodetector application was also proposed. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesGao, Y. ; Li, Y. ; Merkle, K. L. ; Jiang, P. Z. ; Chang, Y. C. ; Shi, H. ; Lam, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The microstructure of high quality Pb-doped Bi2Sr2CaCu2Ox single crystals grown by the flux technique has been studied by transmission electron microscopy (TEM). The single crystals have a superconducting transition temperature (Tc) of about 90 K as grown; Tc drops to about 83 K after annealing in air at 600 °C. TEM results show that the as-grown crystals exhibit twinning. The twin boundaries were found to be parallel to the (100) and (010) lattice planes. However, upon annealing the twin structure disappeared. This microstructure change is discussed in terms of a possible cause for the Tc decrease in the annealed crystals.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesShi, Donglu ; Tang, Ming ; Chang, Y. C. ; Jiang, P. Z. ; Vandervoort, K. ; Malecki, B. ; Lam, D. J.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The transport crystal current density Jc has been measured in Bi2Sr2CaCu2Ox single crystals. With a voltage criterion of 1.0 μV/cm, current density measurements yield Jc values ranging from 300 to 1000 A/cm2 at 77 K and zero field, depending upon crystal quality. The crystals are grown by using a flux method and have a typical size of approximately 10×4×1.5 mm. X-ray diffraction, scanning electron microscopy, electrical resistivity, and magnetization shielding data are reported.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesWu, S. Y. ; Chang, Y. C. ; Lee, K. C. ; Li, W.-H.
[S.l.] : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The magnetic responses of vacuum annealed polycrystalline Pb2Sr2PrCu3O8 to a magnetic field have been studied by ac magnetic susceptibility measurements, where both the in-phase component χ′ and the out-of-phase component χ″ were measured. Diamagnetic responses in χ′(T) below 60 K were clearly seen, showing the occurrence of superconductivity, but it is filamentary. This filamentary superconductivity was also evident in the χ″(T). Under an applied dc field, both the χ′(T) and χ″(T) behave as what are expected for a superconducting system. At lower temperatures, a well-defined peak associated with the Pr spin ordering is also clearly revealed at 5 K. Correspondingly, an anomaly is also seen in the specific heat data. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The effects of valence-band mixing on the gain and on the refractive index change of the quantum-well laser and the effect of an applied electric field perpendicular to the quantum wells for gain switching are studied theoretically. Our calculations are based on the multiband effective-mass theory (k⋅p method) and the density-matrix formalism with the intraband relaxation taken into account. First, we calculate the nonparabolic valence-band structure by the finite difference method after making a unitary transformation of the Luttinger-Kohn Hamiltonian. The calculated gain for our model shows remarkable differences in both spectral shape and peak amplitude as compared with those for the conventional model of the parabolic valence band. The peak gain is reduced considerably and the gain spectrum is more symmetric in our model compared with that for the conventional model. The refractive index change shows a negative increment in the active region for both the TE and TM polarizations resulting in the antiguidance. However, the TM polarization shows more negative change which would result in the suppression of the TM modes as compared with the TE modes. As another example, the perpendicular electric field effects on the quantum-well laser with lateral current injection are also calculated. A red shift and a reduction of the gain spectrum are shown when an electric field is applied. This may have applications as a tunable and high-speed switching quantum-well laser.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesGan, J.-Y. ; Chang, Y. C. ; Wu, T. B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: (TiO2)x−(Ta2O5)1−x thin films were prepared with radio-frequency magnetron sputtering deposition in this study. The dielectric constant measured from these films appears to critically depend on the amount of TiO2 incorporated into the film and post-anneal condition. The composition dependence was found similar to that reported on (TiO2)x−(Ta2O5)1−x bulk. The highest value of dielectric constant is about 55 for a TiO2 content of 8% and annealing at 800 °C. Compared to pure Ta2O5 thin films, significant enhancement in dielectric constant is obtained by adding small quantity of TiO2. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesSengupta, D. K. ; Jackson, S. L. ; Ahmari, D. ; Kuo, H. C. ; Malin, J. I. ; Thomas, S. ; Feng, M. ; Stillman, G. E. ; Chang, Y. C. ; Li, L. ; Liu, H. C.
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesChang, Y. C. ; Oberhofer, A. E. ; Muth, J. F. ; Kolbas, R. M.
Woodbury, NY : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Optical metastability has been studied in undoped GaN films grown on SiC substrates having a previously deposited AlN buffer layer. Brief exposures to a higher intensity ultraviolet light resulted in temporary changes in the optical properties of the GaN layer. The photoinduced changes created high contrast patterns on samples that could be observed under an optical microscope with lower intensity ultraviolet excitation. The subband gap yellow photoluminescence peak at 2.2 eV increased significantly after the patterns were created. This change slowly returned (hours) to its initial value at room temperature. The retention time decreased to a few seconds at temperatures above 100 °C. The data showed that a 1.34 eV thermal activation energy exists, which suggests that the cause of these metastable properties is related to the subband gap yellow luminescence. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: