Search Results - (Author, Cooperation:X. Hou)
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1Latest Papers from Table of Contents or Articles in PressP. Cong ; X. Ma ; X. Hou ; G. D. Edgecombe ; N. J. Strausfeld
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-12-17Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Arthropods/*anatomy & histology/*classification ; Brain/*anatomy & histology ; Extremities/*innervation ; *FossilsPublished by: -
2Latest Papers from Table of Contents or Articles in PressP. Cong ; X. Ma ; X. Hou ; G. D. Edgecombe ; N. J. Strausfeld
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-07-22Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Arthropods/*anatomy & histology/*classification ; Biological Evolution ; Brain/*anatomy & histology ; China ; Digestive System/anatomy & histology ; Extremities/anatomy & histology/*innervation ; *Fossils ; Ganglia/anatomy & histology ; Muscles/anatomy & histology ; Neuropil ; Retina/anatomy & histologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressG. Tanaka ; X. Hou ; X. Ma ; G. D. Edgecombe ; N. J. Strausfeld
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-10-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Arthropods/*anatomy & histology/*classification ; Brain/anatomy & histology ; China ; *Extremities ; *Fossils ; Ganglia/anatomy & histology ; Neuroanatomy ; Neuropil ; X-Ray MicrotomographyPublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2012-10-13Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Arthropods/*anatomy & histology/classification ; Brain/anatomy & histology ; *Fossils ; Optic Lobe, Nonmammalian/anatomy & histologyPublished by: -
5Latest Papers from Table of Contents or Articles in PressH. J. Pletsch ; L. Guillemot ; H. Fehrmann ; B. Allen ; M. Kramer ; C. Aulbert ; M. Ackermann ; M. Ajello ; A. de Angelis ; W. B. Atwood ; L. Baldini ; J. Ballet ; G. Barbiellini ; D. Bastieri ; K. Bechtol ; R. Bellazzini ; A. W. Borgland ; E. Bottacini ; T. J. Brandt ; J. Bregeon ; M. Brigida ; P. Bruel ; R. Buehler ; S. Buson ; G. A. Caliandro ; R. A. Cameron ; P. A. Caraveo ; J. M. Casandjian ; C. Cecchi ; O. Celik ; E. Charles ; R. C. Chaves ; C. C. Cheung ; J. Chiang ; S. Ciprini ; R. Claus ; J. Cohen-Tanugi ; J. Conrad ; S. Cutini ; F. D'Ammando ; C. D. Dermer ; S. W. Digel ; P. S. Drell ; A. Drlica-Wagner ; R. Dubois ; D. Dumora ; C. Favuzzi ; E. C. Ferrara ; A. Franckowiak ; Y. Fukazawa ; P. Fusco ; F. Gargano ; N. Gehrels ; S. Germani ; N. Giglietto ; F. Giordano ; M. Giroletti ; G. Godfrey ; I. A. Grenier ; M. H. Grondin ; J. E. Grove ; S. Guiriec ; D. Hadasch ; Y. Hanabata ; A. K. Harding ; P. R. den Hartog ; M. Hayashida ; E. Hays ; A. B. Hill ; X. Hou ; R. E. Hughes ; G. Johannesson ; M. S. Jackson ; T. Jogler ; A. S. Johnson ; W. N. Johnson ; J. Kataoka ; M. Kerr ; J. Knodlseder ; M. Kuss ; J. Lande ; S. Larsson ; L. Latronico ; M. Lemoine-Goumard ; F. Longo ; F. Loparco ; M. N. Lovellette ; P. Lubrano ; F. Massaro ; M. Mayer ; M. N. Mazziotta ; J. E. McEnery ; J. Mehault ; P. F. Michelson ; W. Mitthumsiri ; T. Mizuno ; M. E. Monzani ; A. Morselli ; I. V. Moskalenko ; S. Murgia ; T. Nakamori ; R. Nemmen ; E. Nuss ; M. Ohno ; T. Ohsugi ; N. Omodei ; M. Orienti ; E. Orlando ; F. de Palma ; D. Paneque ; J. S. Perkins ; F. Piron ; G. Pivato ; T. A. Porter ; S. Raino ; R. Rando ; P. S. Ray ; M. Razzano ; A. Reimer ; O. Reimer ; T. Reposeur ; S. Ritz ; R. W. Romani ; C. Romoli ; D. A. Sanchez ; P. M. Saz Parkinson ; A. Schulz ; C. Sgro ; E. do Couto e Silva ; E. J. Siskind ; D. A. Smith ; G. Spandre ; P. Spinelli ; D. J. Suson ; H. Takahashi ; T. Tanaka ; J. B. Thayer ; J. G. Thayer ; D. J. Thompson ; L. Tibaldo ; M. Tinivella ; E. Troja ; T. L. Usher ; J. Vandenbroucke ; V. Vasileiou ; G. Vianello ; V. Vitale ; A. P. Waite ; B. L. Winer ; K. S. Wood ; M. Wood ; Z. Yang ; S. Zimmer
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-11-01Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressMagwanga, R. O., Lu, P., Kirungu, J. N., Dong, Q., Hu, Y., Zhou, Z., Cai, X., Wang, X., Hou, Y., Wang, K., Liu, F.
Genetics Society of America (GSA)
Published 2018Staff ViewPublication Date: 2018-08-01Publisher: Genetics Society of America (GSA)Electronic ISSN: 2160-1836Topics: BiologyPublished by: -
7Latest Papers from Table of Contents or Articles in PressX. Hou ; L. Pedi ; M. M. Diver ; S. B. Long
American Association for the Advancement of Science (AAAS)
Published 2012Staff ViewPublication Date: 2012-11-28Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Binding Sites ; Calcium/*chemistry ; Calcium Channels/*chemistry ; Crystallography, X-Ray ; Drosophila Proteins/agonists/*chemistry ; Glutamic Acid/chemistry ; Membrane Proteins/agonists/*chemistry ; Porosity ; Protein Binding ; Protein Structure, Secondary ; Protein Structure, TertiaryPublished by: -
8Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2015-03-06Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Air ; Biomimetics/methods ; Gases ; Lab-On-A-Chip Devices ; Microfluidics/*methods ; Models, Theoretical ; Nanotechnology/methods ; Oils ; Plant Stomata/chemistry/metabolism ; *Porosity ; Pressure ; Printing, Three-Dimensional ; Surface Properties ; WaterPublished by: -
9Articles: DFG German National LicensesCao, X. A. ; Hu, H. T. ; Dong, Y. ; Ding, X. M. ; Hou, X. Y.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesLi, Z. S. ; Hou, X. Y. ; Cai, W. Z. ; Wang, W. ; Ding, X. M. ; Wang, Xun
[S.l.] : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The energy level alignment for both Mg/8-hydroxyquinoline aluminum (Alq) and Au/Alq interfaces has been determined by the ultraviolet photoemission measurements. For both interfaces, the difference between the Fermi level and the low-energy edge of the highest occupied molecular orbital (HOMO) is around 1.7 eV. This implies that the Fermi level with respect to the HOMO edge of Alq is independent of the work function of Mg and Au despite a large difference in the metal work function. A Fermi level alignment model is proposed, invoking a charge transfer between the metal and Alq and the formation of a dipolar layer at the metal/Alq interface. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesYuan, Z. L. ; Ding, X. M. ; Hu, H. T. ; Li, Z. S. ; Yang, J. S. ; Miao, X. Y. ; Chen, X. Y. ; Cao, X. A. ; Hou, X. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesHao, P. H. ; Hou, X. Y. ; Zhang, F. L. ; Wang, Xun
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The energy band gap of light-emitting porous silicon is determined by high-resolution electron energy loss spectroscopy, and the valence band edge of porous silicon with respect to its Fermi level is measured by ultraviolet photoelectron spectroscopy. By combining the results with that measured from clean Si, a picture of band lineup at the porous-silicon/p-Si heterointerface is proposed, in which 70% of the total band gap discontinuity occurs at the valence band edge.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesWang, Xun ; Shi, G. ; Zhang, F. L. ; Chen, H. J. ; Wang, W. ; Hao, P. H. ; Hou, X. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: By observing the luminescence micrographic images and measuring the decay behaviors of photoluminescence spectra, it is found that the blue light-emitting porous silicon obtained by boiling water treatment behaves very similarly to the red light-emitting sample. It is thus believed that the blue light emission is originated from the porous silicon skeleton rather than impurity contaminations. The achievement of blue light emission requires the proper control of the size of the Si nanostructures, effective passivation of the internal surfaces of porous silicon layer, and keeping a mechanically strong Si skeleton. A theoretical estimation and the experiments show that the simultaneous fulfillment of these conditions is quite critical, which explains the poor reproducibility of achieving blue emission experimentally.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesHou, X. Y. ; Shi, G. ; Wang, W. ; Zhang, F. L. ; Hao, P. H. ; Huang, D. M. ; Wang, X.
Woodbury, NY : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A boiling water treatment of light emitting porous silicon can give rise to a large blue shift of its photoluminescence spectrum and meanwhile strengthen the skeleton of porous Si by filling up many pores with aqueous oxide. A stable blue-green light emission at the peak wavelength down to 500 nm is achieved. FTIR measurements show that the formation of Si dihydride on the sidewall surfaces of the Si rods is not responsible to the visible luminescence for the very thin Si wires.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesHe, Z. Q. ; Ding, X. M. ; Hou, X. Y. ; Wang, Xun
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: By using a cold cathode ion gun to ionize the nitrogen gas, the molecular-beam-epitaxy growth of GaN is carried out. The zinc-blende structure GaN epilayer grown on the GaAs(100) substrate with a narrow x-ray diffraction peak width (FWHM) of 23 min and a low carrier concentration of 1017 cm−3 is achieved. The surface optical phonon energies of cubic and hexagonal GaN are experimentally determined to be 82 and 90 meV, respectively.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesLi, Z. S. ; Cai, W. Z. ; Su, R. Z. ; Dong, G. S. ; Huang, D. M. ; Ding, X. M. ; Hou, X. Y. ; Wang, Xun
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have developed a new sulfur passivation method—S2Cl2 treatment, which is quite effective for removing the surface oxide layer of GaAs and passivating the surface with monolayer thick sulfides. Photoluminescence (PL) spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS) are used to study the passivated GaAs (100) surfaces. The results of PL reveal that the PL intensity increases by two orders of magnitude, which is indicative of the reduction of surface recombination velocity of GaAs by this treatment. AES data prove that the sulfurized surface contains S, Ga, As, C, and small amount of Cl atoms but no oxygen signal at all. XPS study shows that sulfur atoms bond to both Ga and As atoms more effectively on S2Cl2 treated surfaces than those passivated by (NH4)2Sx.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesHou, X. Y. ; Cai, W. Z. ; He, Z. Q. ; Hao, P. H. ; Li, Z. S. ; Ding, X. M. ; Wang, X.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesWang, J. ; Liu, X. H. ; Li, Z. S. ; Su, R. Z. ; Ling, Z. ; Cai, W. Z. ; Hou, X. Y. ; Wang, Xun
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A comparative study of the Raman spectra of ZnSe films grown by molecular beam epitaxy on GaAs(100) substrates passivated by NH4)2)Sx and S2Cl2 solutions is presented. Based on the analysis of the line shape of the first-order longitudinal-optical phonon of ZnSe with spatial correlation model of Raman scattering, it is shown that the ZnSe films grown on the GaAs substrates passivated by S2Cl2 solutions have longer coherence lengths, which indicate that their crystalline qualities are better than those passivated by NH4)2Sx solutions. In addition, the barrier heights of ZnSe/GaAs interfaces for different S passivations have been obtained from the ratios of the intensity of the coupled longitudinal-optical phonon-plasmon mode to that of the longitudinal-optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S2Cl2 solutions have lower density of interfacial states. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesYuan, Z. L. ; Ding, X. M. ; Lai, B. ; Hou, X. Y.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Synchrotron radiation photoelectron spectroscopy has been used to investigate III–V phosphide GaP and InP (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick sulfide layer with P–S bond and strong Ga–S (In–S) bond of high thermal stability is formed on the neutralized (NH4)2S-treated GaP (InP) (100) surfaces. The possible passivation mechanisms of the two (NH4)2S solutions to III–V phosphide surfaces are also discussed. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: