Search Results - (Author, Cooperation:X. G. Zhang)
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1Jiasen Niu, Liang Liu, J. F. Feng, X. F. Han, J. M. D. Coey, X.-G. Zhang, and Jian Wei
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-03-21Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: MagnetismPublished by: -
2Staff View
Publication Date: 2018-01-20Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsPublished by: -
3Staff View
Publication Date: 2018-01-20Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsPublished by: -
4X G Zhang, T Wang, J P Sun, Q Zhang, Z P Song and J J Wang
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-12-20Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
5Wonhee Ko, Giang D. Nguyen, Hoil Kim, Jun Sung Kim, X.-G. Zhang, and An-Ping Li
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-10-25Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Condensed Matter: Electronic Properties, etc.Published by: -
6Min He, Gang Li, Zhaozhao Zhu, Ying Zhang, Licong Peng, Rui Li, Jianqi Li, Hongxiang Wei, Tongyun Zhao, X.-G. Zhang, Shouguo Wang, Shi-Zeng Lin, Lin Gu, Guoqiang Yu, J. W. Cai, and Bao-gen Shen
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-05-22Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: MagnetismPublished by: -
7Y. G. Tong ; W. F. Shi ; D. Liu ; J. Qian ; L. Liang ; X. C. Bo ; J. Liu ; H. G. Ren ; H. Fan ; M. Ni ; Y. Sun ; Y. Jin ; Y. Teng ; Z. Li ; D. Kargbo ; F. Dafae ; A. Kanu ; C. C. Chen ; Z. H. Lan ; H. Jiang ; Y. Luo ; H. J. Lu ; X. G. Zhang ; F. Yang ; Y. Hu ; Y. X. Cao ; Y. Q. Deng ; H. X. Su ; W. S. Liu ; Z. Wang ; C. Y. Wang ; Z. Y. Bu ; Z. D. Guo ; L. B. Zhang ; W. M. Nie ; C. Q. Bai ; C. H. Sun ; X. P. An ; P. S. Xu ; X. L. Zhang ; Y. Huang ; Z. Q. Mi ; D. Yu ; H. W. Yao ; Y. Feng ; Z. P. Xia ; X. X. Zheng ; S. T. Yang ; B. Lu ; J. F. Jiang ; B. Kargbo ; F. C. He ; G. F. Gao ; W. C. Cao
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-08-27Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
8Y. G. Tong ; W. F. Shi ; D. Liu ; J. Qian ; L. Liang ; X. C. Bo ; J. Liu ; H. G. Ren ; H. Fan ; M. Ni ; Y. Sun ; Y. Jin ; Y. Teng ; Z. Li ; D. Kargbo ; F. Dafae ; A. Kanu ; C. C. Chen ; Z. H. Lan ; H. Jiang ; Y. Luo ; H. J. Lu ; X. G. Zhang ; F. Yang ; Y. Hu ; Y. X. Cao ; Y. Q. Deng ; H. X. Su ; W. S. Liu ; Z. Wang ; C. Y. Wang ; Z. Y. Bu ; Z. D. Guo ; L. B. Zhang ; W. M. Nie ; C. Q. Bai ; C. H. Sun ; X. P. An ; P. S. Xu ; X. L. Zhang ; Y. Huang ; Z. Q. Mi ; D. Yu ; H. W. Yao ; Y. Feng ; Z. P. Xia ; X. X. Zheng ; S. T. Yang ; B. Lu ; J. F. Jiang ; B. Kargbo ; F. C. He ; G. F. Gao ; W. C. Cao
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-05-15Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsPublished by: -
9J. Yang ; J. Ortega-Hernandez ; N. J. Butterfield ; X. G. Zhang
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-03-01Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animal Structures/*anatomy & histology/physiology ; Animals ; Arthropods/*anatomy & histology/classification/physiology ; China ; Digestive System/anatomy & histology ; Extremities/*anatomy & histology/physiology ; Feeding Behavior/physiology ; *Fossils ; Head/*anatomy & histology/physiology ; History, Ancient ; Mouth/anatomy & histology/physiology ; Movement ; PhylogenyPublished by: -
10G. L. Zhang, G. X. Zhang, S. P. Hu, Y. J. Yao, J. B. Xiang, H. Q. Zhang, J. Lubian, J. L. Ferreira, B. Paes, E. N. Cardozo, H. B. Sun, J. J. Valiente-Dobón, D. Testov, A. Goasduff, P. R. John, M. Siciliano, F. Galtarossa, R. Francesco, D. Mengoni, D. Bazzacco, E. T. Li, X. Hao, and W. W. Qu
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-01-24Publisher: American Physical Society (APS)Print ISSN: 0556-2813Electronic ISSN: 1089-490XTopics: PhysicsKeywords: Nuclear ReactionsPublished by: -
11K. Lejaeghere ; G. Bihlmayer ; T. Bjorkman ; P. Blaha ; S. Blugel ; V. Blum ; D. Caliste ; I. E. Castelli ; S. J. Clark ; A. Dal Corso ; S. de Gironcoli ; T. Deutsch ; J. K. Dewhurst ; I. Di Marco ; C. Draxl ; M. Dulak ; O. Eriksson ; J. A. Flores-Livas ; K. F. Garrity ; L. Genovese ; P. Giannozzi ; M. Giantomassi ; S. Goedecker ; X. Gonze ; O. Granas ; E. K. Gross ; A. Gulans ; F. Gygi ; D. R. Hamann ; P. J. Hasnip ; N. A. Holzwarth ; D. Iusan ; D. B. Jochym ; F. Jollet ; D. Jones ; G. Kresse ; K. Koepernik ; E. Kucukbenli ; Y. O. Kvashnin ; I. L. Locht ; S. Lubeck ; M. Marsman ; N. Marzari ; U. Nitzsche ; L. Nordstrom ; T. Ozaki ; L. Paulatto ; C. J. Pickard ; W. Poelmans ; M. I. Probert ; K. Refson ; M. Richter ; G. M. Rignanese ; S. Saha ; M. Scheffler ; M. Schlipf ; K. Schwarz ; S. Sharma ; F. Tavazza ; P. Thunstrom ; A. Tkatchenko ; M. Torrent ; D. Vanderbilt ; M. J. van Setten ; V. Van Speybroeck ; J. M. Wills ; J. R. Yates ; G. X. Zhang ; S. Cottenier
American Association for the Advancement of Science (AAAS)
Published 2016Staff ViewPublication Date: 2016-03-26Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
12C H Zhou, R Y Pan, H T Ma, H Zhang, X G Guan, N N Mao and F J Sun
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-07-20Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
13Z F Chang, J H Zhang, X G Shi, Q Wang, D K Zhang and X F Duan
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
14Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We present a simple approximation for treating anisotropic scattering within the semiclassical Boltzmann equation for current in plane geometry in magnetic multilayers. This approximation can be used to qualitatively account for the forward scattering that is neglected in the lifetime approximation, and requires only one additional parameter. For the case of a bulk material its effect is a simple renormalization of the scattering rate. The simplicity of this term has allowed quick and simple solution to the Boltzmann equation for magnetic multilayers using realistic band structures. When we use the band structures for Cu|Co multilayers obtained from first-principles calculations, we find an increase in the resistance of the multilayer, compared to the solution without the scattering-in term, due to the higher scattering rates needed to fit the same bulk conductivities. The giant-magnetoresistance ratio is also changed when the vertex corrections are included. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Zhang, X. G. ; Rodriguez, A. ; Li, P. ; Jain, F. C. ; Ayers, J. E.
[S.l.] : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have demonstrated the patterned heteroepitaxial processing (PHP) approach for the removal of threading dislocations (TDs) from ZnSe and ZnS0.02Se0.98 on GaAs (001). PHP involves the growth of a continuous heteroepitaxial layer followed by postgrowth patterning and annealing. We found that the basic mechanism of TD removal by PHP is thermally activated dislocation motion in the presence of sidewalls. By studying the temperature dependence we showed that the activation energy for the annealing process (∼0.7 eV in ZnSe on GaAs) is consistent with dislocation motion by glide. We showed that there is a minimum mesa thickness required for the complete removal of TDs by PHP (∼3000 Å for 70 μm×70 μm mesas of ZnSe on GaAs). This is because the lateral forces acting on TDs are proportional to the mesa thickness. We also conducted a preliminary study of the mismatch dependence of PHP. Our results suggest that PHP removes TDs more effectively in the higher lattice mismatch system ZnSe/GaAs (001) than in the lower lattice mismatch system ZnS0.02Se0.98/GaAs (001). This is expected based on the mismatch dependence of the line tension forces in the misfit segments of dislocations. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Butler, W. H. ; Zhang, X.-G. ; Schulthess, T. C. ; Nicholson, D. M. C. ; Oparin, A. B.
[S.l.] : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Giant magnetoresistance (GMR) and spin-dependent tunneling may be used to make magnetic random access memory devices. We have applied first-principles based electronic structure techniques to understand these effects and in the case of GMR to model the transport properties of the devices. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Butler, W. H. ; Zhang, X.-G. ; Wang, Xindong
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have calculated the electronic structure of the spin-dependent tunneling structures, Fe|Ge|Fe and Fe|GaAs|Fe, using first principles techniques. We find that there is a large charge transfer from the metal layer to the semiconductor layer; 0.21 electrons are transferred from Fe to Ge and 0.27 electrons are transferred from Fe to GaAs at each interface. The density of states of the interfacial metal layer is dramatically different from the other metal layers; there is a large peak in the density of states at the Fermi energy for the minority electrons. The electronic structure of the semiconductor layer is quite different for the majority and the minority spins although its total magnetic moment is negligible. Our results suggest that the theory of spin-dependent tunneling using the simple model of a potential barrier or a model based on densities of states taken from bulk band structures may not apply to these systems. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Nicholson, D. M. C. ; Butler, W. H. ; Zhang, X.-G. ; MacLaren, J. M. ; Gurney, B. A. ; Speriosu, V. S.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Nonferromagnetic atoms present at Ni/Cu and Permalloy/Cu interfaces in sputtered spin valve magnetoresistive layered structures have been shown to cause reduced magnetoresistance. Here we show that a model in which the moments on the Ni atoms in the interfacial region of Ni/Cu are reduced substantially by interdiffusion with Cu is consistent with the experimental results. In contrast, we believe that moments persist at the permalloy/Cu interface, which first principle total energy calculations suggest will be disordered at finite temperatures. These reduced or disordered moments are expected to significantly reduce the GMR.Type of Medium: Electronic ResourceURL: -
19Butler, W. H. ; Zhang, X.-G. ; Nicholson, D. M. C. ; MacLaren, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A theory of the electrical conductivity of homogeneous random alloys based on the Korringa—Kohn—Rostoker coherent potential approximation (KKR-CPA) is generalized to treat an inhomogeneous alloy in which the concentrations of the constituent atoms can vary from site to site. A special case of such a system is an epitaxial multilayer system. We develop the theory for such systems and show how it can be implemented by using the layer Korringa—Kohn—Rostoker technique to calculate the electronic structure. Applications to magnetic multilayers and to the calculation of the giant magnetoresistance are discussed.Type of Medium: Electronic ResourceURL: -
20Butler, W. H. ; Zhang, X.-G. ; Nicholson, D. M. C. ; Schulthess, T. C. ; MacLaren, J. M.
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We used the Layer Korringa Kohn Rostoker technique to calculate the electronic structure of cobalt-copper multilayers and spin valves from first principles within the local spin density approximation. Using this electronic structure together with a phenomenological self-energy which may vary from layer to layer, we calculated the non-local layer-dependent conductivity by means of the Kubo linear response formalism. By calculating the majority and minority conductivities for parallel and anti-parallel alignment of the moments in the cobalt layers we determined the giant magnetoresistance (GMR). Several interesting features emerge from the calculations. When the scattering rates are relatively high, we find that the contributions to the GMR are largely non-local, with the largest contributions arising from changes in the currents carried in a cobalt plane next to copper due to fields sensed in the cobalt layer on the other side of copper. When scattering rates are relatively low (comparable to that of cobalt and copper at room temperature), there are important contributions to the GMR from local conduction in the copper layers. This effect arises from the fact that when the component of the majority spin electron momentum parallel to the layers exceeds a certain value, it gets trapped in the copper layers. If the scattering rate is lower in the copper than in the cobalt there is a significant enhancement in the majority spin conductivity and in the GMR. This effect is analogous to the channeling of light by an optical waveguide. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: