Search Results - (Author, Cooperation:X. Duan)
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1Latest Papers from Table of Contents or Articles in PressJ. W. Ho ; Y. L. Jung ; T. Liu ; B. H. Alver ; S. Lee ; K. Ikegami ; K. A. Sohn ; A. Minoda ; M. Y. Tolstorukov ; A. Appert ; S. C. Parker ; T. Gu ; A. Kundaje ; N. C. Riddle ; E. Bishop ; T. A. Egelhofer ; S. S. Hu ; A. A. Alekseyenko ; A. Rechtsteiner ; D. Asker ; J. A. Belsky ; S. K. Bowman ; Q. B. Chen ; R. A. Chen ; D. S. Day ; Y. Dong ; A. C. Dose ; X. Duan ; C. B. Epstein ; S. Ercan ; E. A. Feingold ; F. Ferrari ; J. M. Garrigues ; N. Gehlenborg ; P. J. Good ; P. Haseley ; D. He ; M. Herrmann ; M. M. Hoffman ; T. E. Jeffers ; P. V. Kharchenko ; P. Kolasinska-Zwierz ; C. V. Kotwaliwale ; N. Kumar ; S. A. Langley ; E. N. Larschan ; I. Latorre ; M. W. Libbrecht ; X. Lin ; R. Park ; M. J. Pazin ; H. N. Pham ; A. Plachetka ; B. Qin ; Y. B. Schwartz ; N. Shoresh ; P. Stempor ; A. Vielle ; C. Wang ; C. M. Whittle ; H. Xue ; R. E. Kingston ; J. H. Kim ; B. E. Bernstein ; A. F. Dernburg ; V. Pirrotta ; M. I. Kuroda ; W. S. Noble ; T. D. Tullius ; M. Kellis ; D. M. MacAlpine ; S. Strome ; S. C. Elgin ; X. S. Liu ; J. D. Lieb ; J. Ahringer ; G. H. Karpen ; P. J. Park
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-08-29Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Caenorhabditis elegans/*cytology/*genetics ; Cell Line ; Centromere/genetics/metabolism ; Chromatin/chemistry/*genetics/*metabolism ; Chromatin Assembly and Disassembly/genetics ; DNA Replication/genetics ; Drosophila melanogaster/*cytology/*genetics ; Enhancer Elements, Genetic/genetics ; Epigenesis, Genetic ; Heterochromatin/chemistry/genetics/metabolism ; Histones/chemistry/metabolism ; Humans ; Molecular Sequence Annotation ; Nuclear Lamina/metabolism ; Nucleosomes/chemistry/genetics/metabolism ; Promoter Regions, Genetic/genetics ; Species SpecificityPublished by: -
2Latest Papers from Table of Contents or Articles in PressA. Krishnaswamy ; M. Yamagata ; X. Duan ; Y. K. Hong ; J. R. Sanes
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-08-20Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Amacrine Cells/cytology/physiology ; Animals ; Female ; Immunoglobulin G/genetics/*metabolism ; Male ; Membrane Proteins/genetics/*metabolism ; Mice ; Motion ; Motion Perception/*physiology ; Mutation ; Retinal Ganglion Cells/*cytology/*physiology ; Synapses/genetics/metabolism ; Visual Pathways/*physiologyPublished by: -
3Latest Papers from Table of Contents or Articles in PressB. Yuan, M. Xu, Y. Yu, L. Zang, R. Hong, C. Chen, Z. Wang, L. Nie, R. Ke, D. Guo, Y. Wu, T. Long, S. Gong, H. Liu, M. Ye, X. Duan and HL-2; A team
Institute of Physics Publishing (IOP)
Published 2018Staff ViewPublication Date: 2018-03-20Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
4Latest Papers from Table of Contents or Articles in PressPrediction of Chemotherapeutic Efficacy in Non-Small Cell Lung Cancer by Serum Metabolomic ProfilingTian, Y., Wang, Z., Liu, X., Duan, J., Feng, G., Yin, Y., Gu, J., Chen, Z., Gao, S., Bai, H., Wan, R., Jiang, J., Liu, J., Zhang, C., Wang, D., Han, J., Zhang, X., Cai, L., He, J., Wang, J.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-05-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressR. Ke, M. Xu, L. Nie, Z. Gao, Y. Wu, B. Yuan, J. Chen, X. Song, L. Yan and X. Duan
Institute of Physics Publishing (IOP)
Published 2018Staff ViewPublication Date: 2018-05-25Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressX. Huang ; Z. Zhao ; L. Cao ; Y. Chen ; E. Zhu ; Z. Lin ; M. Li ; A. Yan ; A. Zettl ; Y. M. Wang ; X. Duan ; T. Mueller ; Y. Huang
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-06-13Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
7Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Diffraction from totally relaxed, partially relaxed, and unrelaxed strained-layer superlattices is considered in the light of the similar rocking curves obtained by convergent-beam electron diffraction and x-ray diffraction. Diffraction of the superlattice can be described by an intensity expression given in terms of the strains and thicknesses of the superlattice bilayer. It is shown that the intensity profile of a reflection of a given superlattice depends on the difference of the tensile and compressive strains, i.e., the oscillating strain, of the superlattice bilayer. The oscillating strain of the superlattice bilayer, to a very good approximation, is independent of the state of strain in the step model of the superlattice. The insight gained leads to the understanding and prediction of the general form of the rocking curve of a superlattice from its growth parameters, although simulation of the rocking curve is still needed in order to obtain accurate structural parameters.Type of Medium: Electronic ResourceURL: -
8Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesWang, Y. Q. ; Maclaren, Ian ; Duan, X. F.
[S.l.] : American Institute of Physics (AIP)
Published 2001Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Electron energy-loss spectroscopy (EELS) has been used to determine the valence state of manganese for all the samples at low temperature (93 K). EELS results indicate that the valence state of manganese keeps constant (∼3.5) for all the samples. The effects of the A-site cation size mismatch on the charge ordering (CO) behaviors in the manganites (La1−xYx)0.5(Ca1−ySry)0.5MnO3 are studied by transmission electron microscopy (TEM). TEM images show that the size mismatch and disorder of A-site cations have a suppression effect on the CO transition. The schematic models are proposed for the incommensurate CO modulation in the samples with size mismatch σ2≤0.003. The disappearance of the CO transition in the sample with the largest mismatch (σ2=0.005) is explained by the random arrangements of Mn3+ and Mn4+ ions. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesSunil, D. ; Sokolov, J. ; Rafailovich, M. H. ; Kotyuzhanskii, B. ; Gafney, H. D. ; Duan, X. ; Wilkens, B. J. ; Hanson, A. L.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesGao, Min ; Duan, X. F. ; Li, Jianming ; Wang, Fenglian
[S.l.] : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: (001) platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Two types of relaxation occur in the cross-sectional transmission electron microscopy samples of the GexSi1−x/Si strained-layer superlattices (SLS) by large-angle convergent-beam electron diffraction (LACBED) and imaging technique which gives a good LACBED pattern superimposed on a high spatial resolution shadow image of the SLS. One type of relaxation occurs between the Si and the GeSi layers. It is negligible in the convergent-beam electron diffraction (CBED) case for the larger value of the ratio of the sample thickness to the SLS wavelength. Another type occurs between the superlattice as an average crystal and the Si substrate. The relaxation of the SLS can be measured by the shift of the Kikuchi line in the SLS from that in the Si substrate.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A large-angle convergent-beam electron diffraction (LACBED) pattern with fine diffraction lines from a cross-sectional specimen of GexSi1−x/Si strained-layer superlattices (SLS) can give much information on local strain and misfit stress relaxation. The shift of the diffraction lines in the GeSi layers from those in the Si layers can be used to determine the strain relaxation. A profile of the thin film relaxation versus the specimen thickness is presented. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesWu, J. ; Li, W. ; Fan, T. W. ; Wang, Z. G. ; Duan, X. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 1995Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesGao, M. ; Duan, X. F. ; Peng, L.-M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Void-like defects of octahedron structure having {111} facets were observed in annealed Czochralski silicon. The amorphous coverage of SiOx and SiCx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. It is suggested that these defects are a kind of amorphous precipitate origin. A mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesGao, Min ; Duan, X. F. ; Wang, Fenglian
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Conventional transmission electron microscopy and energy-filtering were used to study the dislocations and nanocavities in proton-implanted (001) silicon. A two-dimensional network of dislocations and nanocavities was found after a two-step annealing, while only isolated cavities were present in single-step annealed Si. In addition, two-step annealing increased materially the size and density of the nanocavities. The Burgers vector of the dislocations was mainly the 1/2〈110〉 type. The gettering of oxygen at the nanocavities was demonstrated. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesDuan, X. F. ; Gao, M. ; Peng, L.-M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A method is proposed for the accurate measurement of phase shift in electron holography. The method is based on the use of moiré fringes resulting from the subtraction of a null electron hologram by a real object hologram recorded under slightly different experimental conditions. This method does not require any optical or digital reconstruction of the electron hologram, and is shown to be highly sensitive to the phase shift of the electron wave passing through an object. Using experimental results obtained from a single particle of silicon, we demonstrate that the sensitivity of this method to phase shift may easily be amplified by more than 11 times compared with the conventional method using an ordinary electron hologram. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesDai, Z. R. ; Wang, Z. L. ; Duan, X. F. ; Zhang, Jiming
Woodbury, NY : American Institute of Physics (AIP)
Published 1996Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Interface microstructures of BaTiO3/LaAlO3 grown by metalorganic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked up with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation when cooled down from the growth temperature. The Burgers vector of the interface dislocations is 〈010〉. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: At room temperature, the lattice image of a modulated structure associated with charge ordering has been observed in the (La0.5Mn0.5)MnO3 phase of La0.9Sn0.1MnO3, which is composed of two-type phases: ABO3 and A2B2O7. Results of electron energy loss spectroscopy and energy dispersive x-ray spectroscopy show that the need of the chemical balance and small A-site radius for the (La0.5Mn0.5)MnO3 phase are the main reasons for the appearance of charge ordering stripes. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesKong, X. ; Wang, Y. Q. ; Li, H. ; Duan, X. F.
Woodbury, NY : American Institute of Physics (AIP)
Published 2002Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The microstructure and boron K-edge fine structure in MgB2 produced under high pressure are studied using high-resolution transmission electron microscopy and electron energy-loss spectroscopy in a transmission electron microscope. A pre-peak located at 188 eV in the boron K-edge energy-loss near edge structure (ELNES) provides a direct evidence for the existence of a high and unfilled p-like density of states (DOS) across the Fermi level. The σ(px+py) states dominate in this unfilled p-like DOS. The theoretical simulation results of the ELNES using the linearized augmented plane wave method can explain the experimental spectrum very well. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: