Search Results - (Author, Cooperation:X. Ding)

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  1. 1
    Staff View
    Publication Date:
    2018-04-20
    Publisher:
    American Chemical Society (ACS)
    Topics:
    Chemistry and Pharmacology
    Published by:
    http://www.acs.org/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Staff View
    Publication Date:
    2018-06-07
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    0031-9007
    Electronic ISSN:
    1079-7114
    Topics:
    Physics
    Keywords:
    General Physics: Statistical and Quantum Mechanics, Quantum Information, etc.
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  3. 3
    Staff View
    Publication Date:
    2018-07-10
    Publisher:
    American Physical Society (APS)
    Print ISSN:
    1098-0121
    Electronic ISSN:
    1095-3795
    Topics:
    Physics
    Keywords:
    Magnetism
    Published by:
    http://www.aps.org/

    Latest Papers from Table of Contents or Articles in Press
  4. 4
    Tan, X., Ding, Y., Zhu, P., Dou, R., Liang, Z., Yang, D., Huang, Z., Wang, W., Wu, X., Weng, X.
    The American Association of Immunologists (AAI)
    Published 2018
    Staff View
    Publication Date:
    2018-05-08
    Publisher:
    The American Association of Immunologists (AAI)
    Print ISSN:
    0022-1767
    Electronic ISSN:
    1550-6606
    Topics:
    Medicine
    Published by:
    http://www.aai.org/

    Latest Papers from Table of Contents or Articles in Press
  5. 5
    C. L. Hsu ; W. Lin ; D. Seshasayee ; Y. H. Chen ; X. Ding ; Z. Lin ; E. Suto ; Z. Huang ; W. P. Lee ; H. Park ; M. Xu ; M. Sun ; L. Rangell ; J. L. Lutman ; S. Ulufatu ; E. Stefanich ; C. Chalouni ; M. Sagolla ; L. Diehl ; P. Fielder ; B. Dean ; M. Balazs ; F. Martin
    American Association for the Advancement of Science (AAAS)
    Published 2011
    Staff View
    Publication Date:
    2011-12-17
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adenosine/metabolism ; Animals ; Apoptosis ; Cell Count ; Cell Proliferation ; Cells, Cultured ; Histiocytosis/*physiopathology ; *Homeostasis ; Humans ; Hydrogen-Ion Concentration ; Listeriosis/immunology/microbiology ; Lysosomal Storage Diseases/physiopathology ; Lysosomes/*physiology/ultrastructure ; Macrophage Colony-Stimulating Factor/metabolism ; Macrophages/immunology/*physiology/ultrastructure ; Mice ; Mice, Inbred C57BL ; Mice, Knockout ; Myelopoiesis ; Nucleoside Transport Proteins/genetics/*physiology ; Phagocytosis ; Receptor, Macrophage Colony-Stimulating Factor/metabolism ; Signal Transduction ; Thymocytes/immunology/physiology
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  6. 6
    S. Li ; L. Zhang ; Q. Yao ; L. Li ; N. Dong ; J. Rong ; W. Gao ; X. Ding ; L. Sun ; X. Chen ; S. Chen ; F. Shao
    Nature Publishing Group (NPG)
    Published 2013
    Staff View
    Publication Date:
    2013-08-21
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Acylation ; Animals ; Antigens, CD95/metabolism ; Apoptosis ; Arginine/*metabolism ; Death Domain Receptor Signaling Adaptor Proteins/metabolism ; Disease Models, Animal ; Enteropathogenic Escherichia coli/*metabolism/pathogenicity ; Escherichia coli Infections/metabolism/microbiology/pathology ; Escherichia coli Proteins/*metabolism ; Fas-Associated Death Domain Protein/chemistry/metabolism ; HeLa Cells ; Humans ; Male ; Mice ; Mice, Inbred C57BL ; Multiprotein Complexes/chemistry/metabolism ; N-Acetylglucosaminyltransferases/*metabolism ; NF-kappa B/metabolism ; Protein Biosynthesis ; Protein Structure, Tertiary ; Receptor-Interacting Protein Serine-Threonine Kinases/chemistry/metabolism ; Receptors, Tumor Necrosis Factor, Type I/chemistry/metabolism ; *Signal Transduction ; TNF Receptor-Associated Death Domain Protein/*chemistry/*metabolism ; TNF-Related Apoptosis-Inducing Ligand/metabolism ; Tumor Necrosis Factor-alpha/metabolism ; Virulence ; Virulence Factors/*metabolism
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  7. 7
    S. Hao ; L. Cui ; D. Jiang ; X. Han ; Y. Ren ; J. Jiang ; Y. Liu ; Z. Liu ; S. Mao ; Y. Wang ; Y. Li ; X. Ren ; X. Ding ; S. Wang ; C. Yu ; X. Shi ; M. Du ; F. Yang ; Y. Zheng ; Z. Zhang ; X. Li ; D. E. Brown ; J. Li
    American Association for the Advancement of Science (AAAS)
    Published 2013
    Staff View
    Publication Date:
    2013-03-09
    Publisher:
    American Association for the Advancement of Science (AAAS)
    Print ISSN:
    0036-8075
    Electronic ISSN:
    1095-9203
    Topics:
    Biology
    Chemistry and Pharmacology
    Computer Science
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.aaas.org/

    Latest Papers from Table of Contents or Articles in Press
  8. 8
    L. Zhang ; X. Ding ; J. Cui ; H. Xu ; J. Chen ; Y. N. Gong ; L. Hu ; Y. Zhou ; J. Ge ; Q. Lu ; L. Liu ; S. Chen ; F. Shao
    Nature Publishing Group (NPG)
    Published 2011
    Staff View
    Publication Date:
    2011-12-14
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Keywords:
    Adaptor Proteins, Signal Transducing/chemistry/*metabolism ; Bacterial Secretion Systems ; Cysteine/*metabolism ; Enteropathogenic Escherichia coli/metabolism/pathogenicity ; Escherichia coli Proteins/*metabolism ; Humans ; Intracellular Signaling Peptides and Proteins/chemistry/*metabolism ; MAP Kinase Kinase Kinases/metabolism ; Methionine/analogs & derivatives/metabolism ; Methylation ; Methyltransferases/metabolism ; NF-kappa B/*antagonists & inhibitors/*metabolism ; Protein Binding ; Protein Structure, Tertiary ; Signal Transduction ; Substrate Specificity ; TNF Receptor-Associated Factor 6 ; Tumor Necrosis Factor Receptor-Associated Peptides and Proteins/metabolism ; Ubiquitin/*metabolism ; Virulence Factors/*metabolism ; Zinc Fingers
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  9. 9
    Q. Liu, M. He, X. Ding, W. Li and H. Peng
    Institute of Physics Publishing (IOP)
    Published 2018
    Staff View
    Publication Date:
    2018-09-15
    Publisher:
    Institute of Physics Publishing (IOP)
    Electronic ISSN:
    1748-0221
    Topics:
    Physics
    Published by:
    http://www.iop.org/

    Latest Papers from Table of Contents or Articles in Press
  10. 10
    Gong, H. ; Le Gressus, C. ; Oh, K. H. ; Ding, X. Z. ; Ong, C. K. ; Tan, B. T. G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A scanning electron microscope is employed for the investigation of charging on different cuts of an α-SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α-SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.354778

    Articles: DFG German National Licenses
  11. 11
    Oh, K. H. ; Le Gressus, C. ; Gong, H. ; Ong, C. K. ; Tan, B. T. G. ; Ding, X. Z.

    [S.l.] : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A scanning electron microscope is used as a tool to study dielectric relaxation processes in α-SiO2 by measuring the leakage current in the sample surrounded by a metallic aperture. A transient time (tt) of the order of a few seconds appears before the steady-state current is established. The time dependence of the trapping rate is found to follow a power law and to be related to relaxation processes of a dielectric under electrical and thermal stress.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.354928

    Articles: DFG German National Licenses
  12. 12
    Ding, X.-Q. ; Bill, E. ; Trautwein, A. X. ; Winkler, H. ; Kostikas, A. ; Papaefthymiou, V. ; Simopoulos, A. ; Beardwood, P. ; Gibson, J. F.

    College Park, Md. : American Institute of Physics (AIP)
    Published 1993
    Staff View
    ISSN:
    1089-7690
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Chemistry and Pharmacology
    Notes:
    Exchange interactions and charge transfer in the Fe2+Fe3+ pair of the mixed valence [Fe2S2(dimethylmethanebisbenzimidazolate)2]3− trianion have been studied by analysis of Mössbauer spectra in the temperature range of 1.5–180 K and in applied fields of 10 mT, 0.35 T, and 6.2 T. The low-temperature spectra reveal a ground state with total spin St=1/2 and hyperfine parameters intermediate between values for a Fe2+Fe3+ localized mixed-valence pair and a fully delocalized system where the two iron atoms are equivalent. A consistent set of hyperfine parameters has been derived by fitting the spectra with a stochastic relaxation model taking into account spin relaxation in the St=1/2 state and electron hopping between the iron ions. An interpretation of the values of the hyperfine parameters has been given by solving a spin Hamiltonian, which includes antiferromagnetic and double exchange in an asymmetric Fe2+Fe3+ pair and which allows partial electron delocalization. Using the value a2=0.8 for the delocalization coefficient and an estimate of Δ=105 cm−1 for the difference between the St=1/2 and the first excited St=3/2 state we have derived limits for the exchange-coupling constant J, the double-exchange parameter B, and the energy difference EA−EB arising from the two possible configurations FeA2+FeB3+ and FeA3+FeB2+, i.e., 70 cm−1(approximately-less-than)J(approximately-less-than)300 cm−1, 0〈||B||(approximately-less-than)395 cm−1, and 0〈||EA−EB||(approximately-less-than)590 cm−1.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.465881

    Articles: DFG German National Licenses
  13. 13
    Cao, X. A. ; Hu, H. T. ; Dong, Y. ; Ding, X. M. ; Hou, X. Y.

    [S.l.] : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    A stable GaS passivating layer was deposited on GaAs using α-Ga2S3 powder as a single-source precursor. Both good crystal quality and clean GaS/GaAs interface were achieved. Electron-energy-loss spectra showed that the sulfide material has a band gap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C–V) behavior with very small loop hysteresis. The C–V curves showed no aging after 20 months. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.371776

    Articles: DFG German National Licenses
  14. 14
    Taijing, Lu ; Dai, Yisheng ; Ding, X. Z. ; Ong, C. K. ; Tan, B. T. G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The dielectric properties of a fluorozirconate glass are investigated in the frequency range from 0.5 to 13.5 GHz using a microwave vector network analyzer. A prominent dielectric resonance is observed around 7.0 GHz. The resonance may be due to a fundamental interunit vibrational mode of the basic structural ZrFn polyhedral units of the fluorozirconate glass.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.357028

    Articles: DFG German National Licenses
  15. 15
    Ding, X. Z. ; Taijing, Lu ; Ong, C. K. ; Tan, B. T. G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Microwave dielectric measurements have been performed on various Zn-doped InP crystals using a vector network analyzer. There are two kinds of dielectric response in Zn-doped InP crystals depending on their Zn concentration. The general dielectric response in InP in the microwave frequency region is dielectric relaxation, which is related to the dipolar species formed from the ionized substitutional ZnIn−. The other dielectric response of InP crystals doped with a higher Zn concentration is dielectric loss. The crystal doped with Zn to a concentration of 2.14×1018 cm−3 shows a strong dielectric loss at 11 GHz, but no dielectric loss peaks are found in crystals doped with a lower Zn concentration of 4.36×1017 cm−3. The dipolar species, which gives rise to the dielectric loss in Zn-doped InP crystals, is believed to be a result of vacancy complex defects of neutral substitutional ZnIn and two P vacancies.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.356638

    Articles: DFG German National Licenses
  16. 16
    Mao, J. M. ; Huang, Y. ; Du, Q. H. ; Zhou, J. M. ; Cai, L. H. ; Li, N. ; Zhou, W. Y. ; Qian, S. F. ; Wang, G. ; Fu, C. S. ; Ding, X. Z. ; Xie, S. S.

    [S.l.] : American Institute of Physics (AIP)
    Published 1994
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The transport scattering and single-particle relaxation times which characterize a two-dimensional electron system have been investigated by using thermal neutron irradiation. The ratios of transport scattering time to single-particle relaxation time are observed to vary from 1.7 to 7.8 depending on the electron density. A decrease in single-particle relaxation time is found while the transport scattering time increases as the electron concentrations increase. These phenomena are relevant to the Hall plateau broadening and enhancement of Shubnikov–de Haas oscillations in such an experiment.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.357086

    Articles: DFG German National Licenses
  17. 17
    Li, Z. S. ; Hou, X. Y. ; Cai, W. Z. ; Wang, W. ; Ding, X. M. ; Wang, Xun

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.360074

    Articles: DFG German National Licenses
  18. 18
    Platzer, R. ; Wöhrmann, U. ; Ding, X. L. ; Fink, R. ; Krausch, G. ; Luckscheiter, B. ; Voigt, J. ; Schatz, G.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1991
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Interdiffusion and interface compound formation has been observed at the system Ni/In by using thin-film couples as well as thin In films on low index Ni single-crystal substrates. The method applied was the perturbed γγ-angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compounds and In film thickness has been found.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.104717

    Articles: DFG German National Licenses
  19. 19
    Yuan, Z. L. ; Ding, X. M. ; Hu, H. T. ; Li, Z. S. ; Yang, J. S. ; Miao, X. Y. ; Chen, X. Y. ; Cao, X. A. ; Hou, X. Y.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1997
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Synchrotron radiation photoelectron spectroscopy combined with scanning electron microscopy (SEM) and gravimetry has been used to study GaAs (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick Ga sulfide layer and strong Ga–S bond were formed on the GaAs surface after dipping GaAs wafers in a neutralized (NH4)2S solution. Gravimetric data show that the etching rate of GaAs in the neutralized (NH4)2S solution is about 15% slower than that in the conventional (NH4)2S solution. From SEM observation, fewer etching pits with smaller sizes were found on the neutralized (NH4)2S-treated GaAs surface. © 1997 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.120252

    Articles: DFG German National Licenses
  20. 20
    Ding, X. Z. ; Taijing, Lu ; Ong, C. K. ; Tan, B. T. G.

    [S.l.] : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The dielectric properties of fluorozirconate glasses doped with different impurities have been investigated in the frequency region of 3.0–12.5 GHz using a microwave network analyzer. For glasses containing oxide impurities such as PbO, SiO2, and TiO2, the position of the dielectric resonance, which is observed in the pure fluoride glass, shifts to higher frequencies. Amplitudes of the resonance peaks also become much smaller. The oxide impurities are observed to exist as large numbers of tiny precipitates in the glasses. When the glasses are doped with InF3, the position of the resonance peak shifts to a higher frequency but the amplitude of the peak remains unchanged. The InF3 may be substituted for AlF3 in the glasses. A higher half-resonance width is observed in the doped fluorozirconate glasses. The changes in the dielectric properties are attributed to the different behaviors of the impurities, which affect the structural interunit vibration in the fluoride glasses. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.366813

    Articles: DFG German National Licenses