Search Results - (Author, Cooperation:X. C. Zhang)
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1H. J. Xu ; J. Xue ; B. Lu ; X. C. Zhang ; J. C. Zhuo ; S. F. He ; X. F. Ma ; Y. Q. Jiang ; H. W. Fan ; J. Y. Xu ; Y. X. Ye ; P. L. Pan ; Q. Li ; Y. Y. Bao ; H. F. Nijhout ; C. X. Zhang
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-03-25Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Female ; Forkhead Transcription Factors/deficiency/metabolism ; Hemiptera/*anatomy & histology/enzymology/genetics/*metabolism ; Insulin/metabolism ; Male ; Molecular Sequence Data ; Phosphatidylinositol 3-Kinases/metabolism ; Proto-Oncogene Proteins c-akt/metabolism ; Receptor, Insulin/deficiency/*metabolism ; Signal Transduction ; Wings, Animal/anatomy & histology/enzymology/*growth & development/*metabolismPublished by: -
2Z. K. Yue, Z. Z. Liu, G. S. Tang, X. C. Zhang, L. J. Duan and W. C. Liu
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-04-11Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
3Staff View
Publication Date: 2018-02-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
4Xing, J., Zhang, A., Minze, L. J., Li, X. C., Zhang, Z.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-06-19Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
5Z. Cheng ; J. F. Li ; Y. Niu ; X. C. Zhang ; O. Z. Woody ; Y. Xiong ; S. Djonovic ; Y. Millet ; J. Bush ; B. J. McConkey ; J. Sheen ; F. M. Ausubel
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-03-04Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Arabidopsis/enzymology/*immunology/metabolism/*microbiology ; Arabidopsis Proteins/genetics/metabolism ; Flagellin/immunology ; Heterotrimeric GTP-Binding Proteins/metabolism ; Immunity, Innate ; MAP Kinase Signaling System ; Peptide Hydrolases/*metabolism/secretion ; Plant Immunity/*immunology ; Proteolysis ; Pseudomonas aeruginosa/*enzymology/*immunology/pathogenicity ; Receptors, Cell Surface/deficiency/genetics/metabolismPublished by: -
6S. Yan, P. Zhang, V. Stumpf, K. Gokhberg, X. C. Zhang, S. Xu, B. Li, L. L. Shen, X. L. Zhu, W. T. Feng, S. F. Zhang, D. M. Zhao, and X. Ma
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-01-20Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Atomic and molecular collisions and interactionsPublished by: -
7Staff View
Publication Date: 2014-07-06Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Bacterial Outer Membrane Proteins/*chemistry/*metabolism ; Biological Transport ; Cell Membrane/chemistry/metabolism ; Crystallography, X-Ray ; Lipopolysaccharides/chemistry/*metabolism ; Models, Molecular ; Multiprotein Complexes/chemistry/metabolism ; Protein Binding ; Protein Structure, Secondary ; Shigella flexneri/*chemistry/cytologyPublished by: -
8Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The basic concepts and preliminary applications of optically induced electromagnetic radiation from semiconductor surfaces and interfaces by using femtosecond optics are discussed. This submillimeter-wave radiation provides a novel optoelectronic technique to study semiconductor electronic surface and interface properties with a contactless approach. The amplitude and phase of the electromagnetic radiation from the semiconductor surfaces depend on carrier mobility, impurity doping concentration, and strength and polarity of the static internal field. A large selection of bulk, epitaxial layer and superlattice samples from III-V, II-VI and group-IV semiconductors has been tested. The orientation and strength of the static built-in fields of a wide range of semiconductor surfaces, such as surface depletion, metal/semiconductor Schottky, p-n junction and strain-induced piezoelectric fields, can be determined and estimated.Type of Medium: Electronic ResourceURL: -
9Froberg, N. ; Mack, M. ; Hu, B. B. ; Zhang, X.-C. ; Auston, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: When illuminated by a train of properly spaced ultrashort optical pulses, an array of short photoconducting dipole antennas emits a submillimeter wave beam which can be electrically steered by varying the periodicity of the voltage bias applied to the individual antenna elements.Type of Medium: Electronic ResourceURL: -
10Shu, C. ; Zhang, X.-C. ; Yang, E. S. ; Auston, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have developed a technique to generate a two-dimensional array of optical beams with equal intensities and a constant sequential time delay from a mode-locked laser. A light modulator was used to code the spatially separated beams, which were then multiplexed to form a serial pulse string. With the multiplexed beam focused on a picosecond photoconductor, an ultrafast electrical signal was generated.Type of Medium: Electronic ResourceURL: -
11Zhang, X.-C. ; Hu, B. B. ; Xin, S. H. ; Auston, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The strain generated electric field in a 〈111〉 oriented misfit superlattice provides a suitable bias for generating optically induced femtosecond electromagnetic radiation. We have measured the electromagnetic radiation from GaSb/AlSb strained-layer superlattices and GaSb thin films; extremely fast electromagnetic pulses from 〈111〉 oriented superlattices have been observed. Because the quantum well structure in the superlattice samples limits the pulse duration of the transient photocurrent, it is possible to generate electromagnetic radiation having a pulse duration comparable with the photocarrier transit time across the quantum well.Type of Medium: Electronic ResourceURL: -
12Hu, B. B. ; Froberg, N. ; Mack, M. ; Zhang, X.-C. ; Auston, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The radiation frequency of an electromagnetic wave from a spatial periodically biased photoconducting antenna array can be electrically scanned by varying the periodicity of the bias voltage on the antennas. Over 900 GHz frequency tuning bandwidth has been demonstrated.Type of Medium: Electronic ResourceURL: -
13Darrow, J. T. ; Zhang, X.-C. ; Auston, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We describe the power scaling and saturation properties of large-aperture planar photoconducting antennas which emit and detect ultrashort terahertz electromagnetic pulses. At high optical fluences, the radiated electric field saturates at a value comparable to the bias field in agreement with a simple model of the radiation mechanism.Type of Medium: Electronic ResourceURL: -
14Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Compared with the conventional laser amplitude modulation with a lock-in amplifier, the optical polarization modulation in optoelectronic generation and detection of a free-space terahertz (THz) radiation provides up to twofold increase of the dynamic range. The total laser power for the optoelectronic generation of THz beams can be fully utilized. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Hu, B. B. ; Zhang, X.-C. ; Auston, D. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We present observation of temperature dependence of optically induced femtosecond electromagnetic radiation from several semiconductors. When the sample temperature decreases from 280 to 80 K, over 4 times and 21 times increases of the radiated peak field and radiated energy have been found. A large shift of the frequency spectrum of the radiation was observed when the InSb sample temperature was tuned over this range.Type of Medium: Electronic ResourceURL: -
16Hu, B. B. ; Darrow, J. T. ; Zhang, X.-C. ; Auston, D. H. ; Smith, P. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: When illuminated by ultrashort optical pulses, large aperture planar photoconductors are shown to radiate a directional electromagnetic pulse which can be steered by varying the angle of incidence of the optical beam.Type of Medium: Electronic ResourceURL: -
17Hu, B. B. ; Zhang, X.-C. ; Auston, D. H. ; Smith, P. R.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We describe a technique to extract electro-optic Cherenkov radiation from a LiTaO3 crystal into free space. This permits the generation of collimated beams of terahertz radiation into free space and overcomes previous limitations imposed by total internal reflection.Type of Medium: Electronic ResourceURL: -
18Gui, Y. S. ; Zheng, G. Z. ; Chu, J. H. ; Guo, S. L. ; Zhang, X. C. ; Tang, D. Y.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1−xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
19Zhang, X.-C. ; Darrow, J. T. ; Hu, B. B. ; Auston, D. H. ; Schmidt, M. T. ; Tham, P. ; Yang, E. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.Type of Medium: Electronic ResourceURL: -
20Shu, C. ; Hu, B. B. ; Zhang, X.-C. ; Mei, P. ; Yang, E. S.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Using autocorrelation measurement, we have studied the picosecond photoconductivity of as-deposited, fine-grain polycrystalline silicon thin films. A strong correlation between photoconductive decay time and polycrystalline silicon deposition temperature has been observed. The fastest autocorrelated photoconductive response is 9 ps full width at half maximum, and is obtained from a polycrystalline silicon sample deposited at 590 °C. We estimated the carrier mobility from the peak autocorrelated current, as well as from the average photocurrent of a single gap. These two values show a large difference for samples deposited at relatively high temperatures, which can be explained by imperfect metal-semiconductor ohmic contacts.Type of Medium: Electronic ResourceURL: