Search Results - (Author, Cooperation:W. Tian)
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1Latest Papers from Table of Contents or Articles in PressA. Kreyssig, J. M. Wilde, A. E. Böhmer, W. Tian, W. R. Meier, Bing Li, B. G. Ueland, Mingyu Xu, S. L. Bud'ko, P. C. Canfield, R. J. McQueeney, and A. I. Goldman
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-06-29Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Superfluidity and superconductivityPublished by: -
2Latest Papers from Table of Contents or Articles in PressChen, M., Lyu, G., Han, M., Nie, H., Shen, T., Chen, W., Niu, Y., Song, Y., Li, X., Li, H., Chen, X., Wang, Z., Xia, Z., Li, W., Tian, X.-L., Ding, C., Gu, J., Zheng, Y., Liu, X., Hu, J., Wei, G., Tao, W., Ni, T.
Cold Spring Harbor Laboratory Press
Published 2018Staff ViewPublication Date: 2018-03-06Publisher: Cold Spring Harbor Laboratory PressElectronic ISSN: 1549-5469Topics: BiologyMedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressB. G. Ueland, N. H. Jo, A. Sapkota, W. Tian, M. Masters, H. Hodovanets, S. S. Downing, C. Schmidt, R. J. McQueeney, S. L. Bud'ko, A. Kreyssig, P. C. Canfield, and A. I. Goldman
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-14Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: Electronic structure and strongly correlated systemsPublished by: -
4Latest Papers from Table of Contents or Articles in PressSong, J., Shi, J., Dong, D., Fang, M., Zhong, W., Wang, K., Wu, N., Huang, Y., Liu, Z., Cheng, Y., Gan, Y., Zhou, Y., Zhou, P., Chen, B., Liang, C., Liu, Z., Li, W., Tian, J.
The American Association for Cancer Research (AACR)
Published 2018Staff ViewPublication Date: 2018-08-02Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-02-03Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
6Latest Papers from Table of Contents or Articles in PressW. Tian, H. B. Cao, Amanda J. Clune, Kendall D. Hughey, Tao Hong, J.-Q. Yan, Harish K. Agrawal, John Singleton, B. C. Sales, Randy S. Fishman, J. L. Musfeldt, and J. A. Fernandez-Baca
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-08-09Publisher: American Physical Society (APS)Print ISSN: 1098-0121Electronic ISSN: 1095-3795Topics: PhysicsKeywords: MagnetismPublished by: -
7Latest Papers from Table of Contents or Articles in PressK. L. Sackton ; N. Dimova ; X. Zeng ; W. Tian ; M. Zhang ; T. B. Sackton ; J. Meaders ; K. L. Pfaff ; F. Sigoillot ; H. Yu ; X. Luo ; R. W. King
Nature Publishing Group (NPG)
Published 2014Staff ViewPublication Date: 2014-08-27Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Anaphase-Promoting Complex-Cyclosome/*chemistry/*metabolism ; Binding Sites/drug effects ; Carbamates/*pharmacology ; Cdc20 Proteins/chemistry/metabolism ; Cell Death/drug effects ; Crystallography, X-Ray ; Diamines/*pharmacology ; Drug Synergism ; Mitosis/*drug effects ; Protein Binding/drug effects ; Proteolysis/drug effects ; Tosylarginine Methyl Ester/*pharmacology ; Ubiquitination/drug effectsPublished by: -
8Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the effect of lattice stress relaxation on the microstructures of epitaxial thin films by domain structure studies of epitaxial SrRuO3 thin films grown on vicinal (001) SrTiO3 substrates. X-ray diffraction analysis revealed that the as-grown films are single domain and have a strained lattice due to the lattice mismatch with the substrate. In contrast, plan-view transmission electron microscopy (TEM) images obtained from the same films showed the coexistence of domains with three different crystallographic orientations. The discrepancy is attributed to the lattice stress relaxation occurring on the TEM specimens as the substrate material is eliminated by ion milling or etching, resulting in the formation of elastic domains with different crystallographic orientations. These studies directly reveal a crucial effect of the lattice strain relaxation on the microstructures and properties of epitaxial thin films when the substrate material is removed. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
9Articles: DFG German National LicensesZhu, J. S. ; Lu, X. M. ; Jiang, W. ; Tian, W. ; Zhu, M. ; Zhang, M. S. ; Chen, X. B. ; Liu, X. ; Wang, Y. N.
[S.l.] : American Institute of Physics (AIP)
Published 1997Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: To study the size effects in ferroelectric thin film, we measured the optical transmittance and Raman spectra in BaTiO3 thin films deposited by the rf-magnetron sputtering technique on fused quartz and (111) Si substrates. A variation in the energy gap and Raman peaks with film thickness and grain size was observed and the possible origin was analyzed. © 1997 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
10Articles: DFG German National LicensesJiang, J. C. ; Pan, X. Q. ; Tian, W.
Woodbury, NY : American Institute of Physics (AIP)
Published 1999Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: PbTiO3/SrTiO3 superlattices were grown on (001) SrTiO3 substrates by reactive molecular beam epitaxy (MBE). Sharp superlattice reflections were observed by x-ray diffraction. High-resolution transmission electron microscopy of a [(PbTiO3)10/(SrTiO3)10]15 superlattice revealed that the PbTiO3/SrTiO3 interface structure is atomically sharp. The superlattice interfaces are fully coherent; no misfit dislocations or other crystal defects were observed in the superlattice by transmission electron microscopy. Selected area electron diffraction patterns indicated that the PbTiO3 layers are oriented with the c axis parallel to the growth direction. The dimensional control and interface abruptness achieved in this model system indicate that MBE is a viable method for constructing oxide multilayers on a scale where enhanced dielectric effects are expected. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
11Articles: DFG German National LicensesJiang, J. C. ; Tian, W. ; Pan, X. Q.
Woodbury, NY : American Institute of Physics (AIP)
Published 1998Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The microstructure of epitaxial SrRuO3 thin films grown on vicinal (001) SrTiO3 substrates with miscut angle of 1.9° and miscut direction of 12° away from [100] direction was studied using transmission electron microscopy (TEM). Cross-section as well as plan-view TEM studies revealed that these films are single domain with the in-plane epitaxial orientation relationship of SrRuO3[001]//SrTiO3[010] and SrRuO3[1¯10]//SrTiO3[100]. This result is in contrast to the previous studies of the SrRuO3 thin films grown on exactly (001) SrTiO3, which are composed of two types of [110] domains with nearly the same volume fraction. The occurrence of these different domain structures is attributed to the step-flow growth of the film on the substrate surface due to the miscut. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
12Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The microstructure and interfacial atomic structure of MgB2 thin films fabricated on the (0001) Al2O3 substrate were characterized by transmission electron microscopy. It was found that the MgB2 films grow epitaxially on the substrate with an orientation relationship with respect to the substrate as: (0001)MgB2(parallel)(0001)Al2O3 and [112¯0]MgB2(parallel)[101¯0]Al2O3. At the film/substrate interface, both MgO and MgAl2O4 phases were observed, which also grow epitaxially on the (0001) Al2O3 substrate. The formation of these intermediate phases is ascribed to the existence of oxygen during the annealing. © 2002 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: BaRuO3 thin films with hexagonal 4H structure were grown on (001) SrTiO3 by a 90° off-axis rf-sputtering technique. The thin films were epitaxially grown on the (001) surface of SrTiO3, with (202¯3) planes parallel to the surface of the substrate. Within the growth plane, the film consists of four different crystallographic orientations with respect to the substrate, defined by the surface symmetry of the (001) SrTiO3 substrate. BaRuO3 grains of all four orientations show an anisotropic shape elongated along the [1¯21¯0] direction. The reason for the anisotropic growth is that the lattice mismatch between BaRuO3 and SrTiO3 is smaller along the [1¯21¯0] direction of SrTiO3 in comparison to that along its perpendicular direction. Stacking faults and intergrowths of the 9R structure were observed in small local regions of the film. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesTIAN, W.-Y. ; CHEN, Y.-H.
PO Box 1354, 9600 Garsington Road, Oxford OX4 2XG, UK. : Blackwell Science Ltd
Published 2004Staff ViewISSN: 1460-2695Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsNotes: It is well known that microcracking in brittle materials results in a reduction of the stress intensity factor (SIF) and energy release rate (ERR). The reduced SIF or ERR represents crack tip shielding which is of significant interest to micromechanics and material science researchers. However, the effect of microcracking on the SIF and ERR is a complicated subject even for isotropic homogeneous materials, and becomes much more formidable in case of interface cracks in bonded dissimilar solids. To unravel the micromechanics of interface crack tip shielding in bonded dissimilar anisotropic solids, an interface crack interacting with arbitrarily oriented subinterface microcracks in bonded dissimilar anisotropic materials is studied. After deducing the fundamental solutions for a subinterface crack under concentrated normal and tangential tractions, the present interaction problem is reduced to a system of integral equations which is then solved numerically. A J-integral analysis is then performed with special attention focused on the J2-integral in a local coordinate system attached to the microcracks. Theoretical and numerical results reassert the conservation law of the J-integral derived for isotropic materials1,2 also to be valid for bonded dissimilar anisotropic materials. It is further concluded that there is a wastage when the remote J-integral transmits across the microcracking zone from infinity to the interface macrocrack tip. In order to highlight the influence of microstructure on the interfacial crack tip stress field, the crack tip SIF and ERR in several typical cases are presented. It is interesting to note that the Mode I SIF at the interface crack tip is quite different from the ERR in bonded dissimilar anisotropic materials.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesHaeni, J. H. ; Irvin, P. ; Chang, W. ; Uecker, R. ; Reiche, P. ; Li, Y. L. ; Choudhury, S. ; Tian, W. ; Hawley, M. E. ; Craigo, B. ; Tagantsev, A. K. ; Pan, X. Q. ; Streiffer, S. K. ; Chen, L. Q. ; Kirchoefer, S. W. ; Levy, J. ; Schlom, D. G.
[s.l.] : Macmillian Magazines Ltd.
Published 2004Staff ViewISSN: 1476-4687Source: Nature Archives 1869 - 2009Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsNotes: [Auszug] Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (Tc) is traditionally accomplished by chemical substitution—as in ...Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesStaff View
ISSN: 0040-4020Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Chemistry and PharmacologyType of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesStaff View
ISSN: 0167-4838Keywords: Affinity labeling ; Enzyme inactivation ; Enzyme kinetics ; Fatty acid synthaseSource: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: BiologyChemistry and PharmacologyMedicineType of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 0308-8146Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, NutritionProcess Engineering, Biotechnology, Nutrition TechnologyType of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesYou, K. ; Zhu, Y. ; Lu, J. ; Sun, H. ; Tian, W. ; Zhao, W. ; Zheng, Z. ; Ye, M. ; Ching, C. ; Yu, C. ; Cui, F. ; Jiang, G. ; Ho, T.
Amsterdam : ElsevierStaff ViewISSN: 0370-2693Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesCennini, P. ; Cittolin, S. ; Revol, J.-P. ; Rubbia, C. ; Tian, W.-H. ; Picchi, P. ; Cavanna, F. ; Piano Mortari, G. ; Bettini, A. ; Gigli Berzolari, A. ; Pepato, A. ; Piazzoli, A. ; Rappoldi, A. ; Dainese, B. ; De Vecchi, C. ; Montanari, C. ; Cline, D. ; Scannicchio, D. ; Calligarich, E. ; Casagrande, F. ; Mauri, F. ; Pietropaolo, F. ; Muratori, G. ; Raselli, G.L. ; Wang, H.
Amsterdam : ElsevierStaff ViewISSN: 0168-9002Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002Topics: PhysicsType of Medium: Electronic ResourceURL: