Search Results - (Author, Cooperation:W. Meng)
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1Staff View
Publication Date: 2018-06-14Publisher: Royal SocietyElectronic ISSN: 2054-5703Topics: Natural Sciences in GeneralKeywords: genetics, genomicsPublished by: -
2Nguyen, Q. C., Sajjadi, M., McCullough, M., Pham, M., Nguyen, T. T., Yu, W., Meng, H.-W., Wen, M., Li, F., Smith, K. R., Brunisholz, K., Tasdizen, T.
BMJ Publishing Group
Published 2018Staff ViewPublication Date: 2018-02-13Publisher: BMJ Publishing GroupPrint ISSN: 0143-005XElectronic ISSN: 1470-2738Topics: MedicineKeywords: Open accessPublished by: -
3Staff View
Publication Date: 2018-07-31Publisher: Institute of Physics (IOP)Print ISSN: 1755-1307Electronic ISSN: 1755-1315Topics: GeographyGeosciencesPhysicsPublished by: -
4H. Huang, J. Kewisch, C. Liu, A. Marusic, W. Meng, F. Méot, P. Oddo, V. Ptitsyn, V. Ranjbar, and T. Roser
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-06-29Publisher: American Physical Society (APS)Print ISSN: 0031-9007Electronic ISSN: 1079-7114Topics: PhysicsKeywords: Plasma and Beam PhysicsPublished by: -
5Staff View
Publication Date: 2018-11-06Publisher: Institute of Physics (IOP)Print ISSN: 1757-8981Electronic ISSN: 1757-899XTopics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision MechanicsPublished by: -
6Staff View
Publication Date: 2018-10-16Publisher: The Company of BiologistsPrint ISSN: 0950-1991Electronic ISSN: 1477-9129Topics: BiologyKeywords: Reproductive biologyPublished by: -
7P. K. Joshi ; T. Esko ; H. Mattsson ; N. Eklund ; I. Gandin ; T. Nutile ; A. U. Jackson ; C. Schurmann ; A. V. Smith ; W. Zhang ; Y. Okada ; A. Stancakova ; J. D. Faul ; W. Zhao ; T. M. Bartz ; M. P. Concas ; N. Franceschini ; S. Enroth ; V. Vitart ; S. Trompet ; X. Guo ; D. I. Chasman ; J. R. O'Connel ; T. Corre ; S. S. Nongmaithem ; Y. Chen ; M. Mangino ; D. Ruggiero ; M. Traglia ; A. E. Farmaki ; T. Kacprowski ; A. Bjonnes ; A. van der Spek ; Y. Wu ; A. K. Giri ; L. R. Yanek ; L. Wang ; E. Hofer ; C. A. Rietveld ; O. McLeod ; M. C. Cornelis ; C. Pattaro ; N. Verweij ; C. Baumbach ; A. Abdellaoui ; H. R. Warren ; D. Vuckovic ; H. Mei ; C. Bouchard ; J. R. Perry ; S. Cappellani ; S. S. Mirza ; M. C. Benton ; U. Broeckel ; S. E. Medland ; P. A. Lind ; G. Malerba ; A. Drong ; L. Yengo ; L. F. Bielak ; D. Zhi ; P. J. van der Most ; D. Shriner ; R. Magi ; G. Hemani ; T. Karaderi ; Z. Wang ; T. Liu ; I. Demuth ; J. H. Zhao ; W. Meng ; L. Lataniotis ; S. W. van der Laan ; J. P. Bradfield ; A. R. Wood ; A. Bonnefond ; T. S. Ahluwalia ; L. M. Hall ; E. Salvi ; S. Yazar ; L. Carstensen ; H. G. de Haan ; M. Abney ; U. Afzal ; M. A. Allison ; N. Amin ; F. W. Asselbergs ; S. J. Bakker ; R. G. Barr ; S. E. Baumeister ; D. J. Benjamin ; S. Bergmann ; E. Boerwinkle ; E. P. Bottinger ; A. Campbell ; A. Chakravarti ; Y. Chan ; S. J. Chanock ; C. Chen ; Y. D. Chen ; F. S. Collins ; J. Connell ; A. Correa ; L. A. Cupples ; G. D. Smith ; G. Davies ; M. Dorr ; G. Ehret ; S. B. Ellis ; B. Feenstra ; M. F. Feitosa ; I. Ford ; C. S. Fox ; T. M. Frayling ; N. Friedrich ; F. Geller ; G. Scotland ; I. Gillham-Nasenya ; O. Gottesman ; M. Graff ; F. Grodstein ; C. Gu ; C. Haley ; C. J. Hammond ; S. E. Harris ; T. B. Harris ; N. D. Hastie ; N. L. Heard-Costa ; K. Heikkila ; L. J. Hocking ; G. Homuth ; J. J. Hottenga ; J. Huang ; J. E. Huffman ; P. G. Hysi ; M. A. Ikram ; E. Ingelsson ; A. Joensuu ; A. Johansson ; P. Jousilahti ; J. W. Jukema ; M. Kahonen ; Y. Kamatani ; S. Kanoni ; S. M. Kerr ; N. M. Khan ; P. Koellinger ; H. A. Koistinen ; M. K. Kooner ; M. Kubo ; J. Kuusisto ; J. Lahti ; L. J. Launer ; R. A. Lea ; B. Lehne ; T. Lehtimaki ; D. C. Liewald ; L. Lind ; M. Loh ; M. L. Lokki ; S. J. London ; S. J. Loomis ; A. Loukola ; Y. Lu ; T. Lumley ; A. Lundqvist ; S. Mannisto ; P. Marques-Vidal ; C. Masciullo ; A. Matchan ; R. A. Mathias ; K. Matsuda ; J. B. Meigs ; C. Meisinger ; T. Meitinger ; C. Menni ; F. D. Mentch ; E. Mihailov ; L. Milani ; M. E. Montasser ; G. W. Montgomery ; A. Morrison ; R. H. Myers ; R. Nadukuru ; P. Navarro ; M. Nelis ; M. S. Nieminen ; I. M. Nolte ; G. T. O'Connor ; A. Ogunniyi ; S. Padmanabhan ; W. R. Palmas ; J. S. Pankow ; I. Patarcic ; F. Pavani ; P. A. Peyser ; K. Pietilainen ; N. Poulter ; I. Prokopenko ; S. Ralhan ; P. Redmond ; S. S. Rich ; H. Rissanen ; A. Robino ; L. M. Rose ; R. Rose ; C. Sala ; B. Salako ; V. Salomaa ; A. P. Sarin ; R. Saxena ; H. Schmidt ; L. J. Scott ; W. R. Scott ; B. Sennblad ; S. Seshadri ; P. Sever ; S. Shrestha ; B. H. Smith ; J. A. Smith ; N. Soranzo ; N. Sotoodehnia ; L. Southam ; A. V. Stanton ; M. G. Stathopoulou ; K. Strauch ; R. J. Strawbridge ; M. J. Suderman ; N. Tandon ; S. T. Tang ; K. D. Taylor ; B. O. Tayo ; A. M. Toglhofer ; M. Tomaszewski ; N. Tsernikova ; J. Tuomilehto ; A. G. Uitterlinden ; D. Vaidya ; A. van Hylckama Vlieg ; J. van Setten ; T. Vasankari ; S. Vedantam ; E. Vlachopoulou ; D. Vozzi ; E. Vuoksimaa ; M. Waldenberger ; E. B. Ware ; W. Wentworth-Shields ; J. B. Whitfield ; S. Wild ; G. Willemsen ; C. S. Yajnik ; J. Yao ; G. Zaza ; X. Zhu ; R. M. Salem ; M. Melbye ; H. Bisgaard ; N. J. Samani ; D. Cusi ; D. A. Mackey ; R. S. Cooper ; P. Froguel ; G. Pasterkamp ; S. F. Grant ; H. Hakonarson ; L. Ferrucci ; R. A. Scott ; A. D. Morris ; C. N. Palmer ; G. Dedoussis ; P. Deloukas ; L. Bertram ; U. Lindenberger ; S. I. Berndt ; C. M. Lindgren ; N. J. Timpson ; A. Tonjes ; P. B. Munroe ; T. I. Sorensen ; C. N. Rotimi ; D. K. Arnett ; A. J. Oldehinkel ; S. L. Kardia ; B. Balkau ; G. Gambaro ; A. P. Morris ; J. G. Eriksson ; M. J. Wright ; N. G. Martin ; S. C. Hunt ; J. M. Starr ; I. J. Deary ; L. R. Griffiths ; H. Tiemeier ; N. Pirastu ; J. Kaprio ; N. J. Wareham ; L. Perusse ; J. G. Wilson ; G. Girotto ; M. J. Caulfield ; O. Raitakari ; D. I. Boomsma ; C. Gieger ; P. van der Harst ; A. A. Hicks ; P. Kraft ; J. Sinisalo ; P. Knekt ; M. Johannesson ; P. K. Magnusson ; A. Hamsten ; R. Schmidt ; I. B. Borecki ; E. Vartiainen ; D. M. Becker ; D. Bharadwaj ; K. L. Mohlke ; M. Boehnke ; C. M. van Duijn ; D. K. Sanghera ; A. Teumer ; E. Zeggini ; A. Metspalu ; P. Gasparini ; S. Ulivi ; C. Ober ; D. Toniolo ; I. Rudan ; D. J. Porteous ; M. Ciullo ; T. D. Spector ; C. Hayward ; J. Dupuis ; R. J. Loos ; A. F. Wright ; G. R. Chandak ; P. Vollenweider ; A. R. Shuldiner ; P. M. Ridker ; J. I. Rotter ; N. Sattar ; U. Gyllensten ; K. E. North ; M. Pirastu ; B. M. Psaty ; D. R. Weir ; M. Laakso ; V. Gudnason ; A. Takahashi ; J. C. Chambers ; J. S. Kooner ; D. P. Strachan ; H. Campbell ; J. N. Hirschhorn ; M. Perola ; O. Polasek ; J. F. Wilson
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-07-02Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Biological Evolution ; Blood Pressure/genetics ; Body Height/*genetics ; Cholesterol, LDL/genetics ; *Cognition ; Cohort Studies ; Educational Status ; Female ; Forced Expiratory Volume/genetics ; Genome, Human/genetics ; *Homozygote ; Humans ; Lung Volume Measurements ; Male ; PhenotypePublished by: -
8Chang, W.-L., Liu, Y.-W., Dang, Y.-L., Jiang, X.-X., Xu, H., Huang, X., Wang, Y.-L., Wang, H., Zhu, C., Xue, L.-Q., Lin, H.-Y., Meng, W., Wang, H.
The Company of Biologists
Published 2018Staff ViewPublication Date: 2018-01-30Publisher: The Company of BiologistsPrint ISSN: 0950-1991Electronic ISSN: 1477-9129Topics: BiologyKeywords: Reproductive biology, Human developmentPublished by: -
9Miron, M., Kumar, B. V., Meng, W., Granot, T., Carpenter, D. J., Senda, T., Chen, D., Rosenfeld, A. M., Zhang, B., Lerner, H., Friedman, A. L., Hershberg, U., Shen, Y., Rahman, A., Luning Prak, E. T., Farber, D. L.
The American Association of Immunologists (AAI)
Published 2018Staff ViewPublication Date: 2018-09-18Publisher: The American Association of Immunologists (AAI)Print ISSN: 0022-1767Electronic ISSN: 1550-6606Topics: MedicinePublished by: -
10Meng, W. J. ; Sell, J. A. ; Eesley, G. L. ; Perry, T. A.
[S.l.] : American Institute of Physics (AIP)
Published 1993Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Real-time measurements of intrinsic stresses during growth of polycrystalline and epitaxial aluminum nitride (AlN) thin films on Si(111) are reported. Our room-temperature measurements on polycrystalline films corroborate previous post-growth measurements. Our high-temperature measurements provide evidence of large intrinsic stresses during epitaxial growth of AlN on Si(111) and insignificant stress relaxation during growth.Type of Medium: Electronic ResourceURL: -
11Meng, W. J. ; Morelli, D. T. ; Roessler, D. M. ; Heremans, J.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have synthesized zirconium nitride/aluminum nitride multilayered thin films with a reactive sputtering technique. The electrical transport and optical properties of these multilayers have been examined by resistivity, Hall effect, and near-normal incidence reflectance and transmittance measurements. We show the existence of a metal-to-insulator transition and strong increase of Hall coefficient at small wavelength of composition modulation. The optical response of the multilayers is systematically modified from the behavior of the individual constituents. The measured optical response is in qualitative agreement with a simple effective-medium theory.Type of Medium: Electronic ResourceURL: -
12Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report characterization of the average Ti atomic bonding environment in Ti-containing hydrocarbon (Ti–C:H) coatings by x-ray absorption near edge structure (XANES) spectroscopy, extended x-ray absorption fine structure (EXAFS) spectroscopy, and high-resolution transmission electron microscopy (TEM). Ti–C:H coatings have been synthesized in a hybrid chemical vapor deposition/physical vapor deposition deposition system, which combines inductively coupled plasma and sputter deposition. Combining x-ray absorption spectroscopy with high resolution TEM imaging, we have determined that the dissolution limit of Ti atoms in an amorphous hydrocarbon (a-C:H) matrix is between 0.9 and 2.5 atomic percent. At Ti compositions 〉2.5 at. %, XANES and EXAFS data indicate that the average Ti atomic bonding environment in Ti–C:H resembles that in cubic B1–TiC, consistent with direct TEM observation of the precipitation of TiC nanocrystallites in an a-C:H matrix. Beyond the Ti dissolution limit, Ti–C:H coatings are in fact TiC/a-C:H nanocomposites, in which the TiC nanoprecipitates are very much bulk like. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Metal-free amorphous hydrocarbon (a-C:H) and Ti-containing hydrocarbon (Ti–C:H) coatings have been synthesized in a hybrid chemical vapor deposition (CVD)/physical vapor deposition (PVD) system which combines inductively coupled plasma (ICP) and sputter deposition. a-C:H coatings have been fabricated by ICP assisted CVD in inert/hydrocarbon gas mixtures while Ti–C:H coatings have been fabricated by ICP assisted magnetron sputtering of Ti in inert/hydrocarbon gas mixtures. We present results of structural characterization and mechanical property measurements on these a-C:H and Ti–C:H coatings. In particular, the influence of hydrogen on the coating mechanical properties is probed experimentally. We show that hydrogen significantly influences the mechanical properties of a-C:H and Ti–C:H coatings and needs to be considered for a full understanding of the mechanical properties of Ti–C:H coatings. Our results demonstrate that combining ICP with sputter deposition makes a versatile CVD/PVD tool capable of depositing metal-free and metal-containing hydrocarbon coatings with widely varying microstructures and mechanical properties. © 2000 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
14Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Ti-containing and W-containing diamond-like hydrocarbon coatings have been synthesized by glow discharge reactive magnetron sputter deposition in an Ar/CH4 mixture. it is shown that these metal-containing hydrocarbon coatings consist of nanocrystalline TiC and WC embedded in an amorphous hydrocarbon matrix and are thin-film nanocomposite materials. The elastic modulus and hardness of these nanocomposites exhibit systematic dependence on their composition, while the ratio of hardness to modulus remains approximately a constant. It is also shown that the elastic modulus and hardness of these nanocomposites are within macromechanical bounds for two-phase composite materials. © 1998 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
15Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Growth of GaN thin films on AlN-buffered Si(111) by ultrahigh-vacuum rf glow discharge reactive magnetron sputtering is reported. Epitaxy of GaN is established by x-ray and electron diffraction. Raman scattering from the epitaxial films consistent with that of wurtzitic GaN is observed. The ion energies involved in the growth process are quantified by measuring the plasma potentials of the Ar/N2 glow discharge by an emissive Langmuir probe technique. As a function of increasing input power, a systematic increase in ion energies and a systematic straining of the GaN lattice are observed. Measured GaN phonon energy scales with lattice strain. © 1994 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
16Meng, W. J. ; Sell, J. A. ; Perry, T. A. ; Rehn, L. E. ; Baldo, P. M.
[S.l.] : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We have grown aluminum nitride thin films by ultrahigh vacuum reactive sputter deposition on Si(111) and Si(001) substrates. We show results of film characterization by Raman scattering, ion beam channeling, and transmission electron microscopy, which establish the occurrence of epitaxial growth of wurtzitic aluminum nitride thin films on Si(111) at temperatures above 600 °C. In contrast, microstructural characterization by transmission electron microscopy shows the formation of highly oriented polycrystalline wurtzitic aluminum nitride thin films on Si(001). Real-time substrate curvature measurements reveal the existence of large intrinsic stresses in aluminum nitride thin films grown on both Si(111) and Si(001) substrates.Type of Medium: Electronic ResourceURL: -
17Staff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: We report growth of epitaxial AlN thin films on Si(111) in a N2 glow discharge using a modified direct current magnetron sputter source in ultrahigh vacuum. Using such a device, we show that the plasma potential of the glow discharge can be varied over a wide range without significant changes in film growth rate and ion density. We show further that changing the plasma potential significantly and systematically affects the lattice strain and the mosaic structure of the AlN films. We show significant straining of the AlN lattice and suggest the occurrence of AlN lattice damage when N+2 ions acquire energies in excess of +50 eV. © 1996 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
18Svinarich, Kathryn A. ; Meng, W. J. ; Eesley, G. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1990Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Picosecond duration laser pulses are used to generate ultrashort acoustic pulses in a bilayer metal film. Time-resolved transient piezoreflectance measurements permit the observation of acoustic reflections from a metal-metal interface within the film, as well as reflections from the film-substrate interface. We show that our measurements are well described by an abrupt interface model of acoustic mismatch.Type of Medium: Electronic ResourceURL: -
19Ma, E. ; Meng, W. J. ; Johnson, W. L. ; Nicolet, M-A. ; Nathan, M.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report a solid-state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross-sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni-Si system, and constitutes an interesting counterpart of the solid-state interdiffusion-induced amorphization in Ni/Zr thin-film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.Type of Medium: Electronic ResourceURL: -
20Meng, W. J. ; Fultz, B. ; Ma, E. ; Johnson, W. L.
Woodbury, NY : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We have performed a comparative transmission electron microscopy study of solid-state interdiffusion reactions in multilayered Ni/Zr and Ni/Ti thin films. The Ni-Zr reaction product was amorphous while the Ni-Ti reaction product was a simple intermetallic compound. Because thermodynamic and chemical properties of these two alloy systems are similar, we suggest kinetic origins for this difference in reaction product.Type of Medium: Electronic ResourceURL: