Search Results - (Author, Cooperation:V. Patel)
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1Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-03-24Publisher: Institute of Physics Publishing (IOP)Electronic ISSN: 1748-0221Topics: PhysicsPublished by: -
2Latest Papers from Table of Contents or Articles in PressNeemuchwala, A., Soares, D., Ravirajan, V., Marchand-Austin, A., Kus, J. V., Patel, S. N.
The American Society for Microbiology (ASM)
Published 2018Staff ViewPublication Date: 2018-03-28Publisher: The American Society for Microbiology (ASM)Print ISSN: 0066-4804Electronic ISSN: 1098-6596Topics: BiologyMedicinePublished by: -
3Latest Papers from Table of Contents or Articles in PressKrisztina M. Papp-Wallace, Nhu Q. Nguyen, Michael R. Jacobs, Christopher R. Bethel, Melissa D. Barnes, Vijay Kumar, Saralee Bajaksouzian, Susan D. Rudin, Philip N. Rather, Satish Bhavsar, Tadiparthi Ravikumar, Prasad K. Deshpande, Vijay Patil, Ravindra Yeole, Sachin S. Bhagwat, Mahesh V. Patel, Focco van den Akker, Robert A. Bonomo
American Chemical Society (ACS)
Published 2018Staff ViewPublication Date: 2018-04-21Publisher: American Chemical Society (ACS)Topics: Chemistry and PharmacologyPublished by: -
4Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-02-09Publisher: Nature Publishing Group (NPG)Electronic ISSN: 2041-1723Topics: BiologyChemistry and PharmacologyNatural Sciences in GeneralPhysicsPublished by: -
5Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-04-25Publisher: American Chemical Society (ACS)Topics: Chemistry and PharmacologyPublished by: -
6Latest Papers from Table of Contents or Articles in PressP. Y. Collins ; V. Patel ; S. S. Joestl ; D. March ; T. R. Insel ; A. S. Daar ; W. Anderson ; M. A. Dhansay ; A. Phillips ; S. Shurin ; M. Walport ; W. Ewart ; S. J. Savill ; I. A. Bordin ; E. J. Costello ; M. Durkin ; C. Fairburn ; R. I. Glass ; W. Hall ; Y. Huang ; S. E. Hyman ; K. Jamison ; S. Kaaya ; S. Kapur ; A. Kleinman ; A. Ogunniyi ; A. Otero-Ojeda ; M. M. Poo ; V. Ravindranath ; B. J. Sahakian ; S. Saxena ; P. A. Singer ; D. J. Stein
Nature Publishing Group (NPG)
Published 2011Staff ViewPublication Date: 2011-07-08Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: *Global Health ; Humans ; Mental Disorders/economics/epidemiology/prevention & control ; Mental Health/*statistics & numerical data ; Substance-Related Disorders/economics/epidemiology ; World Health OrganizationPublished by: -
7Latest Papers from Table of Contents or Articles in PressRiva, A., Patel, V., Kurioka, A., Jeffery, H. C., Wright, G., Tarff, S., Shawcross, D., Ryan, J. M., Evans, A., Azarian, S., Bajaj, J. S., Fagan, A., Patel, V., Mehta, K., Lopez, C., Simonova, M., Katzarov, K., Hadzhiolova, T., Pavlova, S., Wendon, J. A., Oo, Y. H., Klenerman, P., Williams, R., Chokshi, S.
BMJ Publishing Group
Published 2018Staff ViewPublication Date: 2018-04-07Publisher: BMJ Publishing GroupPrint ISSN: 0017-5749Electronic ISSN: 1468-3288Topics: MedicineKeywords: Open access, GutPublished by: -
8Articles: DFG German National LicensesVyas, Rajni B. ; Patel, V. R. ; Patel, V. G. ; Bhatty, R. M.
Oxford, UK : Blackwell Publishing Ltd
Published 1968Staff ViewISSN: 1471-0528Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineType of Medium: Electronic ResourceURL: -
9Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-01-10Publisher: BMJ Publishing GroupPrint ISSN: 0017-5749Electronic ISSN: 1468-3288Topics: MedicineKeywords: Open accessPublished by: -
10Latest Papers from Table of Contents or Articles in PressBernsmeier, C., Triantafyllou, E., Brenig, R., Lebosse, F. J., Singanayagam, A., Patel, V. C., Pop, O. T., Khamri, W., Nathwani, R., Tidswell, R., Weston, C. J., Adams, D. H., Thursz, M. R., Wendon, J. A., Antoniades, C. G.
BMJ Publishing Group
Published 2018Staff ViewPublication Date: 2018-05-09Publisher: BMJ Publishing GroupPrint ISSN: 0017-5749Electronic ISSN: 1468-3288Topics: MedicineKeywords: Open access, GutPublished by: -
11Latest Papers from Table of Contents or Articles in PressStaff View
Publication Date: 2018-09-15Publisher: The American Association for Cancer Research (AACR)Print ISSN: 1078-0432Electronic ISSN: 1557-3265Topics: MedicinePublished by: -
12Articles: DFG German National LicensesStaff View
ISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Dielectric films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition from mixtures of tetramethylsilane with oxygen. The films have been characterized as-deposited and after annealing at 400 °C to determine the thermal stability of their properties. Rutherford backscattering and forward recoil elastic scattering have been used for determination of the composition of the films. Optical properties were characterized by Fourier transform infrared spectroscopy and measurements of the index of refraction and optical gap. The electrical properties were measured in a Si/insulator/metal configuration. It has been found that the index of refraction decreases and the optical gap and dielectric constant increase with increasing oxygen concentration in the gas feed. While the materials did not show a mass or composition loss after annealing, the annealing resulted in a reduction of the dielectric constant of the films. Dielectric constants as low as 3.1 have been obtained after annealing the film deposited from pure tetramethylsilane. © 1999 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
13Articles: DFG German National LicensesGrill, A. ; Meyerson, B. S. ; Patel, V. V. ; Reimer, J. A. ; Petrich, M. A.
[S.l.] : American Institute of Physics (AIP)
Published 1987Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: Hard-carbon films prepared by the rf-plasma decomposition of acetylene have been investigated by high-resolution 13C nuclear magnetic resonance spectroscopy, x-ray photoelectron spectroscopy (XPS), and the H(15Nα,γ)C nuclear resonant reaction. It was found that the ratio of sp2:sp3 bound carbon was 1.6, and that virtually all sp3 carbon atoms are, in fact, bound to one or more hydrogen atoms. Bulk layers contain about 40% hydrogen; however, results of the measurements of the hydrogen concentration, as well as those of XPS, confirm that the composition and properties of these carbon films are a strong function of their distance from the initial growth interface, and are spatially varying over the first 40 nm.Type of Medium: Electronic ResourceURL: -
14Articles: DFG German National LicensesPatel, V. ; Patel, M. ; Ayyagari, S. ; Kosonocky, W. F. ; Misra, D. ; Singh, B.
Woodbury, NY : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Thermal imaging by an infrared television camera has been successfully employed as an in situ method for end-point detection during plasma etching of polycrystalline silicon layers on a SiO2/Si substrate. In addition, it is also shown that thermal imaging can be used for remote sensing of etch rate, heat of reaction, wafer temperature, and for measuring thermal time constants during plasma etching. From these measurements, the heat-transfer coefficient of the thermal contact between the silicon wafer and the water-cooled electrode can be determined.Type of Medium: Electronic ResourceURL: -
15Articles: DFG German National LicensesSun, H. C. ; Patel, V. ; Singh, B. ; Ng, C. K. ; Whittaker, E. A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1994Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: We report the use of a tunable diode laser locked to a molecular vibrational absorption line as a sensitive plasma etching endpoint detector. Measurements were made on multilayer silicon wafers etched in a SF6 plasma discharge. We show that polycrystalline silicon to silicon dioxide endpoint transitions on wafers with exposed area as small as 33 mm2 should be observable by detecting the etch end product SiF4. The method shows considerable potential as an endpoint detection technique for applications such as contact hole etching wherein very small areas are being etched.Type of Medium: Electronic ResourceURL: -
16Articles: DFG German National LicensesPatel, V. ; Singh, B. ; Thomas, J. H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Impedance monitoring of a rf glow discharge is successfully used to determine the end point of reactive ion etching. The feasibility of using this technique is demonstrated on diode, triode, and magnetic multipole enhanced triode reactors applied to etching polycrystalline silicon on SiO2 on Si and Si3N4 on Si in an SF6 plasma, and to stripping photoresist on Al on Si in an O2 plasma. The end point of etching is determined by monitoring changes in the induced dc bias, the rf voltage, the rf current, or the phase relationship between them on either of the powered electrodes (in the cases of the triode configurations). This method is easily applicable as in in-process end-point detector and eliminates the need of optical access to either the plasma or the substrate.Type of Medium: Electronic ResourceURL: -
17Articles: DFG German National LicensesSingh, B. ; Thomas III, J. H. ; Patel, V.
Woodbury, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: The addition of a simple inexpensive magnetic multipole to a parallel plate triode results in a magnetic enhanced etch reactor configuration that has impressive low pressure characteristics. The multipole electrode which is in the form of a cylindrical multipolar bucket, open at both ends, is added to the powered electrode of the triode being employed as a plasma etching system. The multipole becomes, in effect, an extension of the ground shield, surrounding either electrode. The resulting electrode configuration produces an extremely uniform, dense plasma at pressures as low as 2–3×10−4 Torr. The effect of the magnetic enhancement (electron containment, uniformity profile modification, and low substrate bias) is particularly pronounced at lower pressures. Significant improvement over existing triode schemes is obtained using the grounded cylindrical multipolar bucket as an extension of the ground shield of the driven electrode (not the substrate electrode). This system is considerably simpler than dual frequency driven trielectrode systems since it uses 13.56 MHz excitation of both electrodes.Type of Medium: Electronic ResourceURL: -
18Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Comparison of Fourier transform infrared (FTIR) absorption spectroscopy, high resolution 13C nuclear magnetic resonance spectroscopy, and hydrogen evaluation by forward recoil elastic scattering (FRES) measurements shows that FTIR cannot be used to determine the carbon hybridization or total hydrogen content of diamondlike carbon films (DLC). FTIR absorption reflects only the optically active hydrogen in the DLC and, using it together with FRES, it can provide an estimate of the unbound hydrogen contained in the films. The fraction of unbound hydrogen can reach values of up to ∼50%.Type of Medium: Electronic ResourceURL: -
19Articles: DFG German National LicensesStaff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics.Type of Medium: Electronic ResourceURL: -
20Articles: DFG German National LicensesSom, B. K. ; Dasgupta, Brahmananda ; Patel, V. L. ; Gupta, M. R.
New York, NY : American Institute of Physics (AIP)
Published 1992Staff ViewISSN: 1089-7666Source: AIP Digital ArchiveTopics: PhysicsType of Medium: Electronic ResourceURL: