Search Results - (Author, Cooperation:T. Yamauchi)

2018-06-19

Institute of Physics (IOP)

1755-1307

1755-1315

Geography

Geosciences

Physics

2013-11-01

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

Adenylate Kinase/metabolism ; Adiponectin/metabolism/pharmacology ; Adipose Tissue, White/drug effects/metabolism/pathology ; Administration, Oral ; Animals ; Diabetes Mellitus, Type 2/complications/*drug therapy/metabolism/prevention & ; control ; Diet, High-Fat ; Drug Evaluation, Preclinical ; Dyslipidemias/drug therapy ; Enzyme Activation/drug effects ; Glucose Intolerance/drug therapy ; Inflammation/drug therapy ; Insulin Resistance ; Liver/drug effects/metabolism/pathology ; Longevity/*drug effects ; Mice ; Mitochondria/drug effects/metabolism ; Muscle Fibers, Skeletal/cytology/drug effects ; Muscles/cytology ; Obesity/complications/drug therapy/genetics/*physiopathology ; Oxidative Stress/drug effects ; PPAR alpha/metabolism ; Piperidines/administration & dosage/metabolism/*pharmacology/therapeutic use ; Receptors, Adiponectin/*agonists/deficiency/genetics/metabolism ; Signal Transduction/drug effects ; Small Molecule Libraries/chemistry ; Transcription Factors/biosynthesis ; Triglycerides/metabolism

2015-04-10

Nature Publishing Group (NPG)

0028-0836

1476-4687

Biology

Chemistry and Pharmacology

Medicine

Natural Sciences in General

Physics

Amino Acid Sequence ; Binding Sites ; Crystallography, X-Ray ; Histidine/chemistry/metabolism ; Humans ; Models, Molecular ; Molecular Sequence Data ; Protein Conformation ; Receptors, Adiponectin/*chemistry/metabolism ; Structure-Activity Relationship ; Zinc/metabolism

1089-7550

AIP Digital Archive

Physics

Solid-phase reactions and crystallographic structures in the interfacial region of Zr/(100)Si systems, which is closely related to the specific contact resistivity, have been investigated by x-ray diffraction, Auger electron spectroscopy and cross-sectional high-resolution transmission electron microscopy. As-grown Zr films are in an amorphous phase including crystallites. The Zr film on silicon annealed at a temperature of 420 °C for 30 min has a bilayer structure. The upper layer is a crystalline α-Zr layer with a (0001) fibrous structure and the lower layer is an amorphous zirconium silicide layer. The formation of the amorphous silicide layer is considered to result from the diffusion of Si atoms from the substrate into the Zr film and to play a major role in a low contact resistivity of 4×10−8 Ω cm2 achieved in this system. By annealing above 560 °C, which brings about an increase in contact resistivity, the crystalline Zr layer with the fibrous structure is changed to an amorphous silicide throughout the film and, subsequently, ZrSi2 regions with a (010) preferred orientation is formed at the interface between the amorphous interlayer and the single-crystal Si.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Interfacial solid-phase reactions, crystallographic structures, and electrical properties of Hf/(001)Si systems have been investigated as a function of annealing temperature. For Hf/n+-Si systems, extremely low contact resistivities of 7.3×10−8 and 5.8×10−8 Ω cm2 have been achieved at annealing temperatures of 460 and 580 °C, respectively. A bilayer structure of an epitaxial Hf3Si2 and an amorphous layer is formed at the interface by annealing at 460 °C, and an epitaxially-grown Hf3Si2 layer covers the interfacial layer at 580 °C. The current flowing through the interface of Hf/n-Si is dominated by the thermionic emission for these annealing conditions. The Schottky barrier heights, whose values are 0.50 and 0.46 eV at 460 and 580 °C, respectively, are lower than those of HfSi and HfSi2. It has been found that the decrease in contact resistivity of the Hf/Si systems is mainly caused by the lowering of the Schottky barrier height and an improvement of interfacial defects by annealing.

Electronic Resource

1524-475X

Blackwell Publishing Journal Backfiles 1879-2005

Medicine

Aim:  To heal an exposed artificial vessel due to mediastinitis after the replacement of thoracic aortic aneurysm.Methods:  The exposed vessel is washed thoroughly, wrapped in a muscular flap, and a free skin graft is grafted over it to close.Results:  An 81-year-old male repeatedly had mediastinum after the replacement of aneurysm, and it was not cured with muscular fillings, and a rubor on the chest developed to a subcutaneous hematoma. The lesion was closed with a patch on the artificial vessel, the mediastinal abscess was washed, and the opening was closed by using latissimus dorsi muscular flap and split-thickness skin graft. No recurrence has occurred for 3 years. A 69-year-old male developed mediastinitis after the replacement of thoracic arch aortic aneurysm, and the wound reopened and the vessel exposed. Because conservative treatment did not help, pectoralis major muscular flaps with the perforating branches of the internal thoracic artery and vein as the pedicle were elevated from the both sides, filled the mediastinal space and a split-thickness skin graft was grafted. No recurrence has occurred for one year.Conclusions:  Artificial vessels that developed infections are usually removed. However, we had good results by washing the lesion and wrapping it with muscular flap. By considering the size of surgical invasion and high death rate associated with the re-replacement of artificial vessel or the opening of omentum, utilization of muscular flap should be considered as the first choice treatment.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Solid-phase reactions at the interface between Al-Si-Cu and reactively sputtered TiN thin films have been investigated by cross-sectional transmission electron microscopy, Auger electron spectroscopy, and x-ray diffraction. In the case in which the internal stress in the TiN thin film is extremely compressive at 209 MPa, a very thin amorphous Al-Ti-Si ternary compound layer (a-Al-Ti-Si) containing microcrystallites, about 4 nm thick, is found to form at the Al-Si-Cu/TiN interface by annealing at the temperature of 450 °C for 30 min. On the other hand, in the case of a minimally compressive stress of 21 MPa, it is in a marked contrast to form a polycrystalline TiAl3 layer (c-TiAl3) on the amorphous intermediate layer ununiformly. Behavior of the internal stress in the latter TiN film as a function of heating and cooling temperature shows nonlinear characteristics, indicating that a rearrangement of the TiN film actively occurs even at low temperatures below 300 °C. Monte Carlo simulations of internal microstructures based on a ballistic aggregation model suggest to us that a short migration length corresponding to the condition of low internal stress brings about numerous vacancies and disordered regions in the TiN films. It is considered that the rearrangement of the TiN films with a diffusion of Ti atoms governs the solid-phase reactions at the Al-Si-Cu/TiN interfaces and that the formation of the bilayer of c-TiAl3/a-Al-Ti-Si originates in phase separation of the resultant Al-Ti mixing layer. © 1995 American Institute of Physics.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

Large shielding factors obtained by magnetic shaking techniques are reported. A cylindrical magnetic shield with both ends open (length=120 cm, inner diameter=52 cm) was constructed as a one-half model of an actual size. Metglas 2705M amorphous tapes of 5 cm in width and about 22 μm in thickness were wound helically on the outer surface of a tube (outer diameter=52 cm) to form a thin multiple-shell structure of five shells. The outer three shells, each made of 4 layers of tapes, were subjected to a common magnetic shaking (200 Hz). The fourth shell made of 8 layers was subjected to a different magnetic shaking (536 Hz). The innermost one was a passive shell. The shielding factor in the center of the shield measured for a transversely applied magnetic field (100 mG) showed 1/f-like behavior and extremely large values of 90 900 at 1 Hz and 21 000 at 10 Hz when the opening compensation was on. The shielding factor was much lower and constant at the level of 7000 at frequencies of less than 10 Hz when opening compensation was off. The residual dc magnetic field at the center was as small as 5 μG. It is shown by the experiments that a multiple-shell structure with even narrow spacings exhibits large shielding factors when a magnetic shaking technique is applied. It is also shown that the opening compensation technique is a key to building an open-structure magnetic shield with a large shielding factor. © 1996 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

We investigate enhanced and inhibited spontaneous emission effects in a vertical λ-microcavity structure having two kinds of quantum wells (QWs) with the thicknesses of 76 and 114 A(ring), measuring both photoluminescence intensity and carrier lifetime. The 76 and 114 A(ring) QWs are placed at the maximum and at the nodes of the emitted standing wave in the microcavity, respectively. When the λ-microcavity mode is tuned to the quantized band-gap energy of the 76 A(ring) QWs (enhanced condition), the PL intensity is enhanced compared with the case that the cavity mode is tuned to the quantized band-gap energy of the 114 A(ring) QWs (inhibited condition). In addition, the increase of the carrier lifetime is also observed under the inhibited condition. These results demonstrate existence of enhanced and inhibited spontaneous emission effects in the microcavity structures.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10−8 Ω cm2 is obtained after annealing at 420 °C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+-Si system. The formation of ZrSi2 is observed at annealing temperatures above 350 °C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as-grown Zr films are 0.61 eV for p-type Si and 0.52 eV for n-type Si.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

The tight-binding method is applied, for the first time, to the analysis of the conduction-band structure of GaAs-Al0.4Ga0.6As quantum wires which are parallel to the [110] orientation. The results indicate that the effective mass of electrons parallel to the quantum wires is about 1.45 times as large as that of bulk GaAs. This increased effective mass reduces the electron mobility of the quantum wire at low temperature compared to the value which has been expected.

Electronic Resource

1089-7550

AIP Digital Archive

Physics

The magnetic anisotropy of Ni3Mn alloys with various degrees of atomic order has been investigated by a torque magnetometry. By cooling down from 300 to 80 K in a magnetic field of 10 kOe, a unidirectional anisotropy Kd with a period of 360° was induced. The temperature dependence of this anisotropy can be expressed by exp(Q/T) from 50 to 20 K and by log(T) below 20 K. The magnitude of Kd was increased by a factor of 100 during cooling down from 50 to 4.2 K. Furthermore, the hysteresis loop at 4.2 K for a disordered alloy was shifted such that the easy direction of magnetization is that of the cooling magnetic field. They are discussed in terms of exchange anisotropy and the size distribution of clusters with antiferromagnetic coupling.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

Scanning tunneling spectroscopy has been used to study quantum-size effects on the electronic structure of InAs quantum dots (QDs) in correlation with their morphologies. The measured gap energy increases with decreasing dot height in the range of 3.4–7.6 nm. Comparison between the observed height dependence and calculation based on a quantum disk model indicates that the gap energy of a single InAs QD is mainly determined by the quantum confinement in the vertical direction of the QD. © 2000 American Institute of Physics.

Electronic Resource

1077-3118

AIP Digital Archive

Physics

We have investigated the morphologies and gap energies of In0.46Ga0.54As quantum dots (QDs) by using scanning tunneling microscopy/spectroscopy. The measured gap energy increases with decreasing dot height in the range of 1.7–6.6 nm. The gap energy has been calculated using a one-dimensional quantum well model taking into account a variation of In composition. Comparison of the observed height dependence and the calculation indicates the one-dimensional quantum confinement of carriers and the In enrichment in a QD. © 2001 American Institute of Physics.

Electronic Resource

1089-7666

AIP Digital Archive

Physics

Parameter dependence of the radial structure of edge poloidal rotation is studied with spectroscopic measurements for L- and H-mode plasmas in the JFT-2M tokamak [Y. Miura et al., in Plasma Physics and Controlled Nuclear Fusion Research, Proceedings of the 13th International Conference, Washington 1990 (IAEA, Vienna, 1991), Vol. 1, p. 325]. The poloidal flow is in the electron diamagnetic direction and appears suddenly near the plasma edge at the H-mode transition. The poloidal rotation velocity profile in the H mode has a peak at the separatrix. No critical normalized ion collisionality, ν*i, for the transition of the L to the H mode is observed. The size of the poloidal flow in the H mode has no dependence on the poloidal gyroradius.

Electronic Resource

1359-0189

Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Electrical Engineering, Measurement and Control Technology

Physics

Electronic Resource

1546-170X

Nature Archives 1869 - 2009

Biology

Medicine

[Auszug] Adiponectin (Ad) is a hormone secreted by adipocytes that regulates energy homeostasis and glucose and lipid metabolism. However, the signaling pathways that mediate the metabolic effects of Ad remain poorly identified. Here we show that phosphorylation and activation of the 5′-AMP-activated ...

Electronic Resource

1546-170X

Nature Archives 1869 - 2009

Biology

Medicine

[Auszug] Adiponectin is an adipocyte-derived hormone. Recent genome-wide scans have mapped a susceptibility locus for type 2 diabetes and metabolic syndrome to chromosome 3q27, where the gene encoding adiponectin is located. Here we show that decreased expression of adiponectin correlates with insulin ...

Electronic Resource

0006-291X

[abr] DG; diacylglycerol ; [abr] PC; phosphatidylcholine ; [abr] PI; phosphatidylinositol ; [abr] PS; phosphatidylserine

Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Biology

Chemistry and Pharmacology

Physics

Electronic Resource

0003-9861

Elsevier Journal Backfiles on ScienceDirect 1907 - 2002

Biology

Chemistry and Pharmacology

Physics

Electronic Resource