Search Results - (Author, Cooperation:T. W. Fan)

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  1. 1
    Staff View
    Publication Date:
    2016-05-20
    Publisher:
    Nature Publishing Group (NPG)
    Print ISSN:
    0028-0836
    Electronic ISSN:
    1476-4687
    Topics:
    Biology
    Chemistry and Pharmacology
    Medicine
    Natural Sciences in General
    Physics
    Published by:
    http://www.nature.com/

    Latest Papers from Table of Contents or Articles in Press
  2. 2
    Wu, J. ; Wang, Z. G. ; Fan, T. W. ; Lin, L. Y. ; Zhang, M.

    [S.l.] : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1089-7550
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The sidegating effect on the Schottky barrier in ion-implanted GaAs was investigated with capacitance-voltage profiling at various negative substrate voltages. It was demonstrated that the negative substrate voltage modulates the Schottky depletion region width as well as the space charge region at the substrate-active channel interface. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.360399

    Articles: DFG German National Licenses
  3. 3
    Fan, T. W. ; Nejim, A. ; Zhang, J. P. ; Wang, Z. G. ; Hemment, P. L. F. ; Chescoe, D.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    We report a study of precipitation and diffusion in Ge0.5Si0.5 alloy implanted with As+ ions at an energy of 100 keV with a dose of 6×1016 cm−2 and subsequently annealed at 800 and 1000 °C for 1 h. The samples were analyzed by transmission electron microscopy and x-ray energy dispersive spectrometry. A high density of precipitates was observed near the surface of the samples after annealing both at 800 and 1000 °C. The behavior of the precipitation is strongly dependent on the anneal temperature. When the anneal temperature increases, the average size of precipitates increases and the distribution of the precipitates is localized in the vicinity of the surface. X-ray spectra show that most of the largest precipitates formed during the annealing are arsenides. Rodlike precipitates formed during the thermal annealing at 800 °C are tentatively identified as monoclinic GeAs by selected electron diffraction patterns. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.113831

    Articles: DFG German National Licenses
  4. 4
    Wu, J. ; Li, W. ; Fan, T. W. ; Wang, Z. G. ; Duan, X. F.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1995
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of the structure when the GaAs cap layer thickness exceeds a certain amount. The breaking up and moving out of misfit dislocations, initially confined in the (001) substrate/InGaAs epilayer interface, occur mainly along the [110] direction on the interface in the structure. © 1995 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.115524

    Articles: DFG German National Licenses
  5. 5
    Mo, Q. W. ; Fan, T. W. ; Gong, Q. ; Wu, J. ; Wang, Z. G.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    Self-organized InAs islands on (001) GaAs grown by molecular beam epitaxy were annealed and characterized with photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra from the InAs islands demonstrated that annealing resulted in a blueshift in peak energy, a reduction in intensity, and a narrower linewidth in the PL peak. In addition, the TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90° dislocations. The correlation between the changes in the PL spectra and the relaxation of strain in InAs islands was discussed. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.122842

    Articles: DFG German National Licenses
  6. 6
    Wu, J. ; Li, H. X. ; Fan, T. W. ; Wang, Z. G.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1998
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    It was observed with transmission electron microscopy in the In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As system grown on the (001) InP substrate that misfit dislocation lines deviate 〈110〉 directions at an angle with its value depending on the gallium content. Such an abnormal alignment of misfit dislocations is explained in terms of an alloy effect on the formation of single jogs on misfit dislocations in the interface between the III–V ternary compounds. © 1998 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.120721

    Articles: DFG German National Licenses
  7. 7
    Fan, T. W. ; Mo, Q. W. ; Lin, F. ; Wang, Z. G.

    Woodbury, NY : American Institute of Physics (AIP)
    Published 1999
    Staff View
    ISSN:
    1077-3118
    Source:
    AIP Digital Archive
    Topics:
    Physics
    Notes:
    The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm−1. These peaks have been ascribed to A1g and Eg Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. © 1999 American Institute of Physics.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1063/1.125198

    Articles: DFG German National Licenses
  8. 8
    Staff View
    ISSN:
    1437-9813
    Keywords:
    Key words Herniotomy ; Testicular volume ; Ultrasonography
    Source:
    Springer Online Journal Archives 1860-2000
    Topics:
    Medicine
    Notes:
    Abstract A total of 173 boys aged 10 to 179 months with previous unilateral inguinal herniotomy were called back for follow-up. Clinical and ultrasound examinations of the scrotum were performed. The interval between operation and follow-up was 6 to 123 months (mean 31.68 months). One boy (0.58%) had a more than 50% and 10 (5.8%) had a more than 25% decrease in testicular volume on the operated side when compared with the non-operated side.
    Type of Medium:
    Electronic Resource
    URL:
    http://dx.doi.org/10.1007/s003830050508

    Articles: DFG German National Licenses