Search Results - (Author, Cooperation:T. Shibata)
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1A Hatayama, S Nishioka, K Nishida, S Mattei, J Lettry, K Miyamoto, T Shibata, M Onai, S Abe, S Fujita, S Yamada and A Fukano
Institute of Physics (IOP)
Published 2018Staff ViewPublication Date: 2018-06-08Publisher: Institute of Physics (IOP)Electronic ISSN: 1367-2630Topics: PhysicsPublished by: -
2T. Watanabe ; S. Tomizawa ; K. Mitsuya ; Y. Totoki ; Y. Yamamoto ; S. Kuramochi-Miyagawa ; N. Iida ; Y. Hoki ; P. J. Murphy ; A. Toyoda ; K. Gotoh ; H. Hiura ; T. Arima ; A. Fujiyama ; T. Sado ; T. Shibata ; T. Nakano ; H. Lin ; K. Ichiyanagi ; P. D. Soloway ; H. Sasaki
American Association for the Advancement of Science (AAAS)
Published 2011Staff ViewPublication Date: 2011-05-14Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Argonaute Proteins ; *DNA Methylation ; *Genomic Imprinting ; Male ; Mice ; Mice, Inbred C57BL ; Mitochondrial Proteins/genetics/metabolism ; Models, Genetic ; Mutation ; Phospholipase D/genetics/metabolism ; Proteins/genetics/metabolism ; RNA, Small Interfering/*genetics/metabolism ; RNA, Untranslated/*genetics/metabolism ; Repetitive Sequences, Nucleic Acid ; Retroelements ; Spermatogonia/metabolism ; Testis/embryology/metabolism ; Transcription, Genetic ; ras-GRF1/*geneticsPublished by: -
3U. Ohto ; T. Shibata ; H. Tanji ; H. Ishida ; E. Krayukhina ; S. Uchiyama ; K. Miyake ; T. Shimizu
Nature Publishing Group (NPG)
Published 2015Staff ViewPublication Date: 2015-02-18Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Animals ; Base Sequence ; CpG Islands/*immunology ; Crystallography, X-Ray ; DNA/*chemistry/genetics/*immunology/metabolism ; Humans ; Ligands ; Models, Molecular ; Nucleic Acid Conformation ; Protein Structure, Tertiary ; Structure-Activity Relationship ; Toll-Like Receptor 9/agonists/antagonists & inhibitors/*chemistry/*immunologyPublished by: -
4L. B. Alexandrov ; S. Nik-Zainal ; D. C. Wedge ; S. A. Aparicio ; S. Behjati ; A. V. Biankin ; G. R. Bignell ; N. Bolli ; A. Borg ; A. L. Borresen-Dale ; S. Boyault ; B. Burkhardt ; A. P. Butler ; C. Caldas ; H. R. Davies ; C. Desmedt ; R. Eils ; J. E. Eyfjord ; J. A. Foekens ; M. Greaves ; F. Hosoda ; B. Hutter ; T. Ilicic ; S. Imbeaud ; M. Imielinski ; N. Jager ; D. T. Jones ; D. Jones ; S. Knappskog ; M. Kool ; S. R. Lakhani ; C. Lopez-Otin ; S. Martin ; N. C. Munshi ; H. Nakamura ; P. A. Northcott ; M. Pajic ; E. Papaemmanuil ; A. Paradiso ; J. V. Pearson ; X. S. Puente ; K. Raine ; M. Ramakrishna ; A. L. Richardson ; J. Richter ; P. Rosenstiel ; M. Schlesner ; T. N. Schumacher ; P. N. Span ; J. W. Teague ; Y. Totoki ; A. N. Tutt ; R. Valdes-Mas ; M. M. van Buuren ; L. van 't Veer ; A. Vincent-Salomon ; N. Waddell ; L. R. Yates ; J. Zucman-Rossi ; P. A. Futreal ; U. McDermott ; P. Lichter ; M. Meyerson ; S. M. Grimmond ; R. Siebert ; E. Campo ; T. Shibata ; S. M. Pfister ; P. J. Campbell ; M. R. Stratton
Nature Publishing Group (NPG)
Published 2013Staff ViewPublication Date: 2013-08-16Publisher: Nature Publishing Group (NPG)Print ISSN: 0028-0836Electronic ISSN: 1476-4687Topics: BiologyChemistry and PharmacologyMedicineNatural Sciences in GeneralPhysicsKeywords: Aging/genetics ; Algorithms ; Cell Transformation, Neoplastic/*genetics/pathology ; Cytidine Deaminase/genetics ; DNA/genetics/metabolism ; DNA Mutational Analysis ; Humans ; Models, Genetic ; Mutagenesis/*genetics ; Mutagenesis, Insertional/genetics ; Mutagens/pharmacology ; Mutation/*genetics ; Neoplasms/enzymology/*genetics/pathology ; Organ Specificity ; Reproducibility of Results ; Sequence Deletion/genetics ; Transcription, Genetic/geneticsPublished by: -
5D. S. Dolzhnikov ; H. Zhang ; J. Jang ; J. S. Son ; M. G. Panthani ; T. Shibata ; S. Chattopadhyay ; D. V. Talapin
American Association for the Advancement of Science (AAAS)
Published 2015Staff ViewPublication Date: 2015-01-09Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsPublished by: -
6H. Tanji ; U. Ohto ; T. Shibata ; K. Miyake ; T. Shimizu
American Association for the Advancement of Science (AAAS)
Published 2013Staff ViewPublication Date: 2013-03-23Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Amino Acid Sequence ; Crystallography, X-Ray ; Humans ; Hydrogen Bonding ; Imidazoles/chemistry/*metabolism ; Ligands ; Models, Molecular ; Molecular Sequence Data ; Mutant Proteins/chemistry/metabolism ; Protein Binding ; Protein Conformation ; Protein Multimerization ; Protein Structure, Secondary ; Protein Structure, Tertiary ; Quinolines/chemistry/*metabolism ; Signal Transduction ; Thiazoles/chemistry/*metabolism ; Toll-Like Receptor 8/*agonists/*chemistry/metabolismPublished by: -
7OHSHIMA, K. ; TAKEO, H. ; KIKUCHI, M. ; KOZURU, M. ; UIKE, N. ; MASUDA, Y. ; YONEDA, S. ; TAKESHITA, M. ; AKAMATSU, T. SHIBATA & M.
Oxford, UK : Blackwell Publishing Ltd
Published 1994Staff ViewISSN: 1365-2559Source: Blackwell Publishing Journal Backfiles 1879-2005Topics: MedicineNotes: To investigate the relationship of Epstein-Barr virus (EBV) and angioimmunoblastic lymphadenopathy with dysproteinemia, we performed DNA analysis using the polymerase chain reaction (PCR), Southern blot, in situ hybridization, and immunohistochemical analysis of lymph nodes in five patients who were followed up and biopsied more than once. In the course of the disease, nodal architecture diminished, cellular atypia worsened, and clear cells increased in number. In the DNA analysis of the receptor genes, the clonal population increased in number. EBV nucleic acid sequences were found by either PCR or in situ hybridization in all examined nodes. The number of EBV-positive cells varied widely among the cases and throughout the course of the disease in the same patients. The analysis of EBV terminal repeats or lymphocyte-determined membrane antigen genes showed polyclonal populations of EB-infected cells. EBV-positive cells possessed intermediate- to large-sized nuclei, and the cells with large nuclei, especially, expressed latent membrane protein of EBV. These large cells varied in number among the cases. Double-labelling immunohistochemistry/in situ hybridization studies demonstrated that most of the EBV-positive cells expressed B-cell antigen (CD20). The presence of EBV seems to be associated with the selective defects of the immune system, rather than with the direct pathogenesis of angioimmunoblastic lymphadenopathy.Type of Medium: Electronic ResourceURL: -
8Staff View
Publication Date: 2018-01-12Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Lymphoid Neoplasia, Clinical Trials and ObservationsPublished by: -
9Staff View
Publication Date: 2018-01-12Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Lymphoid Neoplasia, Clinical Trials and ObservationsPublished by: -
10Staff View
Publication Date: 2018-01-12Publisher: American Society of Hematology (ASH)Print ISSN: 0006-4971Electronic ISSN: 1528-0020Topics: BiologyMedicineKeywords: Lymphoid Neoplasia, Clinical Trials and ObservationsPublished by: -
11Anderson, N. D., de Borja, R., Young, M. D., Fuligni, F., Rosic, A., Roberts, N. D., Hajjar, S., Layeghifard, M., Novokmet, A., Kowalski, P. E., Anaka, M., Davidson, S., Zarrei, M., Id Said, B., Schreiner, L. C., Marchand, R., Sitter, J., Gokgoz, N., Brunga, L., Graham, G. T., Fullam, A., Pillay, N., Toretsky, J. A., Yoshida, A., Shibata, T., Metzler, M., Somers, G. R., Scherer, S. W., Flanagan, A. M., Campbell, P. J., Schiffman, J. D., Shago, M., Alexandrov, L. B., Wunder, J. S., Andrulis, I. L., Malkin, D., Behjati, S., Shlien, A.
American Association for the Advancement of Science (AAAS)
Published 2018Staff ViewPublication Date: 2018-08-31Publisher: American Association for the Advancement of Science (AAAS)Print ISSN: 0036-8075Electronic ISSN: 1095-9203Topics: BiologyChemistry and PharmacologyGeosciencesComputer ScienceMedicineNatural Sciences in GeneralPhysicsKeywords: Genetics, Medicine, Diseases, Online OnlyPublished by: -
12Staff View
Publication Date: 2018-03-09Publisher: Oxford University PressPrint ISSN: 0953-8178Electronic ISSN: 1460-2377Topics: MedicinePublished by: -
13L. Clark, H. G. Brown, D. M. Paganin, M. J. Morgan, T. Matsumoto, N. Shibata, T. C. Petersen, and S. D. Findlay
American Physical Society (APS)
Published 2018Staff ViewPublication Date: 2018-04-19Publisher: American Physical Society (APS)Print ISSN: 1050-2947Electronic ISSN: 1094-1622Topics: PhysicsKeywords: Quantum optics, physics of lasers, nonlinear optics, classical opticsPublished by: -
14Uchiyama, T. ; Shibata, T. ; Makino, M. ; Mohri, K.
[S.l.] : American Institute of Physics (AIP)
Published 1991Staff ViewISSN: 1089-7550Source: AIP Digital ArchiveTopics: PhysicsNotes: A new high-speed transistor switch module is presented using YBa2Cu3O7−x high-temperature superconductor (HTcSC) bulk cores in liquid nitrogen. A Royer oscillator-type magnetic multivibrator is constructed using two switching transistors combined with four windings tightly set around a HTcSC disk core. Oscillation of the multivibrator is initiated by applying an ON signal pulse current (ION) to a coil, and terminated by applying an OFF signal pulse current (IOFF) to a small transistor which shorts another coil of the HTcSC core. The multivibrator transistor module switched with a turn-on time tON of about 0.2 μs and a turn-off time tOFF of about 0.2 μs for 1-A transistors. The values of tON and tOFF are about 1/10 and 1/100 that of the multivibrator transistor module using an amorphous ferromagnetic core. This quick switching property can be attributed to the Meissner effect or zero inductance effect. These high-speed transistor switching modules have applications in control of small motors with a high rotation speed.Type of Medium: Electronic ResourceURL: -
15Ohmi, T. ; Matsudo, K. ; Shibata, T. ; Ichikawa, T. ; Iwabuchi, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Bias sputtering at low energies, i.e., comparable to typical crystal interatomic binding energies, has been utilized to control the kinetics of thin-film growth. It was found that the crystallographic structures of sputter-deposited silicon films are drastically changed by the energy of ions incident at the substrate. As a result, formation of high quality epitaxial silicon films on (100) silicon substrates has been realized at such low temperatures as 320–350 °C. At the same time, low-temperature impurity doping of the epitaxial layer has been also demonstrated. Furthermore, the low-energy bias sputtering process has made it possible to perform very effective substrate surface cleaning at extremely low temperatures without introducing any damage to the substrate.Type of Medium: Electronic ResourceURL: -
16Ohmi, T. ; Ichikawa, T. ; Shibata, T. ; Matsudo, K. ; Iwabuchi, H.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: A very low temperature in situ substrate-surface cleaning process utilizing low-kinetic-energy particle bombardment has been developed. Dramatic improvements have been achieved in the crystallinity of epitaxial silicon films grown by the newly developed low-kinetic-energy particle process, in which argon ions having precisely controlled energies are continuously bombarding the film surface during the entire growth operation. With the optimized substrate-surface cleaning conditions, in which the contaminants on the surface of silicon substrates are removed without introducing any damages to the substrates, the epitaxial silicon layer with a perfect crystallinity has been obtained at such very low temperatures below 350 °C.Type of Medium: Electronic ResourceURL: -
17Ohmi, T. ; Saito, T. ; Shibata, T. ; Nitta, T.
Woodbury, NY : American Institute of Physics (AIP)
Published 1988Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Copper films were epitaxially grown on (100)Si substrates at room temperatures utilizing low kinetic-energy particle bombardment of growing copper film surfaces. The crystallographic structure of the film, such as (100) or (111) orientation, was selected by controlling the energy of incident particles. Low-temperature, damage-free substrate surface cleaning has also been realized by the low kinetic-energy particle process, which has made it possible to form ideal metal-semiconductor contacts without employing any alloying heat cycles.Type of Medium: Electronic ResourceURL: -
18Staff View
ISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Using full-wave analysis, the motion of the electric field in a coplanar transmission line (two parallel lines) fabricated on nondamaged silicon-on-sapphire when a part of the gap between the two lines is excited by ultrashort optical pulse is demonstrated and the mechanism for the electrical pulse generation is discussed.Type of Medium: Electronic ResourceURL: -
19Sano, E. ; Nagatsuma, T. ; Shibata, T. ; Iwata, A.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: Full-wave analysis demonstrates that a picosecond electrical pulse can be generated by a pulse-forming optoelectronic device, composed of a photoconductor and an impedance mismatch structure in a coplanar stripline. An electro-optic sampling system is used to measure the response of the pulse-forming optoelectronic device, fabricated on a semi-insulating GaAs substrate. Electrical pulses with 1.3 ps duration (full width at half maximum) are achieved using the device.Type of Medium: Electronic ResourceURL: -
20Ishihara, Y. ; Okita, A. ; Yoshikawa, K. ; Shibata, T. ; Ohmi, T. ; Nitta, T. ; Sugiura, J. ; Ohwada, N.
Woodbury, NY : American Institute of Physics (AIP)
Published 1989Staff ViewISSN: 1077-3118Source: AIP Digital ArchiveTopics: PhysicsNotes: By employing stress compensation technology in conjunction with an ultrahigh vacuum ion implanter, we have obtained two orders of magnitude smaller reverse-bias current levels in n+p junctions annealed at 550 °C as compared to the previous data. When samples are made with an optimum stress compensation condition, the magnitude of reverse-bias currents in n+p junctions as well as the carrier deactivation during post-implantation anneal becomes smallest. In order to further reduce the reverse-bias current level, it is shown that the elimination of contamination involvement during the implantation process is most essential.Type of Medium: Electronic ResourceURL: